Industrial Technology Research Institute

Intellectual Property Innovation Corporation

Kun-Lin Chuang

Hsiao-Fen Wei

Yen-Ching Kuo

Cheng-Chung Lee

Chih-Chia Chang

Jia-Chong Ho

Kuan-Ting Chen

Ming-Huan Yang

Chen-Chu Tsai

Chao-Jen Wang

A package of electronic device including a substrate, at least one electronic device and an encapsulation layer is provided. The substrate has a device area and a light transmitting area located outside the device area. The at least one electronic device is disposed on the device area of the substrate. The encapsulation layer is disposed on the substrate and covers the at least one electronic device. The encapsulation layer extends continuously from the device area to the light transmitting area, and a nitrogen content of the encapsulation layer on the device area is higher than a nitrogen content of the encapsulation layer on the light transmitting area. A display panel is also provided.

Package of electronic device and display panel

An electronic device package includes a substrate, an electronic device, and a first packaging layer. The electronic device and the first packaging layer are disposed on the substrate and the electronic device is located between the substrate and the first packaging layer. The first packaging layer includes a first oxynitride layer and a second oxynitride layer, wherein the second oxynitride layer is located between the first oxynitride layer and the electronic device. A composition of the first oxynitride layer includes SiNO, a composition of the second oxynitride layer includes SiNO, and x1&#x3e;x2.

Electronic device package

According an embodiment of the disclosure, a flexible electronic device is provided. The flexible electronic device may include a flexible substrate, a device layer, and a barrier planarization layer. The device layer is located on the flexible substrate and has an upper surface. The upper surface has a maximum height difference less than or equal to 900 nm in a film stacking direction. The barrier planarization layer covers the device layer and the flexible substrate and has a covering surface and a planarization surface opposite to the covering surface. The barrier planarization layer has a water vapor transmission rate lower than or equal to 10g/m-day.

Flexible electronic device having barrier planarization layer including nitrogen-rich region and oxygen-rich region

A flexible electronic module including a patterned flexible substrate, a stretchable material layer, and at least one electronic device is provided. The patterned flexible substrate includes at least one distributed region, and the stretchable material layer connects the distributed region. The electronic device is disposed on at least one of the patterned flexible substrate and the stretchable material layer. A manufacturing method of the flexible electronic module is also provided.

Flexible electronic module and manufacturing method thereof

A composite plate structure including a flexible substrate and a release layer is provided. The flexible substrate has an upper surface and a lower surface. The release layer is disposed on the lower surface of the flexible substrate, and includes a hydrophobic material and a bonding material. The hydrophobic material includes at least one fluorine atom. The bonding material at least includes an amide functional group or an epoxy functional group. The bonding material is bonded to the flexible substrate through the amide functional group or the epoxy functional group. A flexible apparatus including the composite plate structure is also provided.

Composite plate structure and flexible apparatus

A substrate structure and a device employing the same are disclosed. An embodiment of the disclosure provides the substrate structure including a flexible substrate and a first barrier layer. The flexible substrate has a top surface, a side surface, and a bottom surface. The first barrier layer is disposed on and contacting the top surface of the flexible substrate, wherein the first barrier layer consists of Si, N, and Z atoms, wherein the Z atom is selected from a group of H, C, and O atoms, and wherein Si of the first barrier layer is present in an amount from 35 to 42 atom %, N of the first barrier layer is present in an amount from 10 to 52 atom %, and Z of the first barrier layer is present in an amount from 6 to 48 atom %.

Growing community of inventors

Hsinchu, Taiwan

Kun-Lin Chuang