Tokyo Electron Limited

Université D'orleans

Tokyo Electron Limi Ted

Kumiko Ono

Hiroshi Tsujimoto

Koichi Nagami

Shigeru Tahara

Jacques Faguet

Kaoru Maekawa

Takao Funakubo

Shinichi Kozuka

Nagisa Sato

Wataru Ozawa

Hirofumi Haga

Remi Dussart

Thomas Tillocher

Philippe Lefaucheux

Gaëlle Antoun

Akihiro Sakamoto

Naoki Taniguchi

Norihiko Amikura

Atsushi Sawachi

Koichi Yatsuda

Norikazu Sasaki

Yoshitaka Kawaguchi

An etching method includes: a physical adsorption process of physically adsorbing an adsorbate based on a first processing gas on a film to be etched under a condition that the pressure of the first processing gas is smaller than the saturated vapor pressure of the first processing gas with respect to a temperature of an object to be processed while cooling the object to be processed on which the film to be etched is formed; and an etching process of etching the film to be etched by reacting the adsorbate with the film to be etched by a plasma of a second processing gas.

Etching method and etching apparatus

A plasma etching method includes a physisorption step for causing an adsorbate that is based on first processing gas to be physisorbed onto a film to be etched, while cooling an object to be processed on which the film to be etched is provided; and an etching step for etching the film to be etched by causing the adsorbate to react with the film to be etched, using the plasma of second processing gas.

Plasma etching method

A controller disclosed herein drives, in a first step, a high frequency generating source at a first energy condition, and drives, in a second step, a high frequency generating source at a second energy condition. Prior to a switching time of the first step and the second step, the controller switches gas species supplied from the gas supply system into the processing container, and sets a gas flow rate in an initial period just after the switching to be larger than a gas flow rate in a stabilization period after lapse of the initial period.

Plasma processing apparatus and plasma processing method

A method according to an aspect includes outputting gas continuously from a flow rate controller, closing a valve, obtaining a first pressure rise characteristic, outputting the gas intermittently from the flow rate controller, closing the valve, obtaining a second pressure rise characteristic, obtaining a third pressure rise characteristic, obtaining a fourth pressure rise characteristic, obtaining a first required time required from the third pressure rise characteristic, obtaining a second required time from the fourth pressure rise characteristic, obtaining an estimated time until a predetermined pressure is reached, in a case where the intermittent output of the gas is performed assuming that there is no delay time, and obtaining a parameter representing a difference between the estimated time and the second required time.

Method for inspecting flow rate controller and method for processing workpiece

In a plasma processing method includes a first stage of generating plasma of a first processing gas and a second stage of generating plasma of a second processing gas, are performed, a time difference between a start time point of a time period during which the second stage is performed and a start time point of an output of the second processing gas from a gas supply system is decided automatically according to a recipe. A delay time corresponding to flow rates of the first processing gas and the second processing gas in the second stage is specified from a function or a table.

Plasma processing method

In a plasma processing method in which multiple cycles, each of which includes a first stage of generating plasma of a first processing gas containing a first gas and a second stage of generating plasma of a second processing gas containing the first gas and a second gas, are performed, a time difference between a start time point of a time period during which the second stage is performed and a start time point of an output of the second gas from a gas supply system is decided automatically according to a recipe. A delay time corresponding to flow rates of the first gas and the second gas in the second stage is specified from a function or a table. The output of the second gas is begun prior to the start time point of the second stage by a time difference set based on the delay time.

A gas supply control method uses a pressure control flowmeter and first and second valves provided upstream and downstream, respectively, of the pressure control flowmeter in a gas supply line. The pressure control flowmeter includes a control valve and an orifice. The gas supply control method includes maintaining a pressure Pof a first gas supply pipe between the orifice and the control valve and a pressure Pof a second gas supply pipe between the orifice and the second valve so as to satisfy P&#x3e;2&#xd7;P. The supply of gas is controlled by controlling the opening and closing of the second valve with the first valve being open and the control valve being controlled. A volume Vof the first gas supply pipe and a volume Vof the second gas supply pipe have a relationship of V/V&#x2267;9.

Gas supply control method

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Miyagi, Japan

Kumiko Ono