Covalent Materials Corporation

Globalwafers Japan Co., Ltd.

Kumiko Murayama

Koji Izunome

Takeshi Senda

Susumu Maeda

Kazuhiko Kashima

Hiromichi Isogai

Eiji Toyoda

Koji Araki

Haruo Sudo

Tatsuhiko Aoki

Akihiko Kobayashi

Yoichiro Mochizuki

Senlin Fu

A silicon wafer produced from a silicon single crystal ingot grown by Czochralski process is subjected to rapid heating/cooling thermal process at a maximum temperature (T) of 1300&#xb0; C. or more, but less than 1380&#xb0; C. in an oxidizing gas atmosphere having an oxygen partial pressure of 20% or more, but less than 100%. The silicon wafer according to the invention has, in a defect-free region (DZ layer) including at least a device active region of the silicon wafer, a high oxygen concentration region having a concentration of oxygen solid solution of 0.7&#xd7;10atoms/cmor more and at the same time, the defect-free region contains interstitial silicon in supersaturated state.

Method of manufacturing single crystal silicon wafer from ingot grown by Czocharlski process with rapid heating/cooling process

The invention is to provide a method for heat treating a silicon wafer reducing grown-in defects while suppressing generation of slip during RTP and improving surface roughness of the wafer. The method performing a first heat treatment while introducing a rare gas, the first heat treatment comprising the steps of rapidly heating the wafer to Tof 1300&#xb0; C. or higher and the melting point of silicon or lower, keeping the wafer at T, rapidly cooling the wafer to Tof 400-800&#xb0; C. and keeping the wafer at T; and performing a second heat treatment while introducing an oxygen gas in an amount of 20-100 vol. %, the second heat treatment comprising the steps of keeping the wafer at T, rapidly heating the wafer from Tto Tof 1250&#xb0; C. or higher and the melting point of silicon or lower, keeping the wafer at Tand rapidly cooling the wafer.

Method for heat treating a silicon wafer

In a method of heat treating a wafer obtained by slicing a silicon single crystal ingot manufactured by the Czochralski method, a rapid heating/cooling heat treatment is carried out by setting a holding time at an ultimate temperature of 1200&#xb0; C. or more and a melting point of silicon or less to be equal to or longer than one second and to be equal to or shorter than 60 seconds in a mixed gas atmosphere containing oxygen having an oxygen partial pressure of 1.0% or more and 20% or less and argon, and an oxide film having a thickness of 9.1 nm or less or 24.3 nm or more is thus formed on a surface of the silicon wafer.

Method of heat treating silicon wafer

In a manufacturing method for a silicon wafer, a first heat treatment process is performed on the silicon wafer while introducing a first gas having an oxygen gas in an amount of 0.01 vol. % or more and 1.00 vol. % or less and a rare gas, and a second heat treatment process is performed while stopping introducing the first gas and introducing a second gas having an oxygen gas in an amount of 20 vol. % or more and 100 vol. % or less and a rare gas. In the first heat treatment process, the silicon wafer is rapidly heated to first temperature of 1300&#xb0; C. or higher and a melting point of silicon or lower at a first heating rate, and kept at the first temperature. In the second heat treatment process, the silicon wafer is kept at the first temperature, and rapidly cooled from the first temperature at a first cooling rate.

Manufacturing method for silicon wafer

Growing community of inventors

Niigata, Japan

Kumiko Murayama