Globalfoundries Inc.

Kumarapuram Gopalakrishnan

Zhiguo Sun

Daniel P Smith

Hung-Wei Liu

Devices and methods for forming semiconductor devices with a protection layer for a dielectric mask layer are provided. One method includes, for instance; obtaining a substrate having at least one of a dielectric layer and a metal layer; forming a first SiCN dielectric mask layer on a top surface of at least one of the dielectric layer and a metal layer; and forming a silicon nitride (SiNx) cap layer on a top surface of the first SiCN dielectric mask layer. One intermediate semiconductor device includes, for instance: a substrate having at least one of a dielectric layer and a metal layer; a first SiCN dielectric mask layer on a top surface of at least one of the dielectric layer and a metal layer; and a silicon nitride (SiNx) cap layer on a top surface of the first SiCN dielectric mask layer.

Growing community of inventors

Malta, NY, United States of America

Kumarapuram Gopalakrishnan