Taiwan Semiconductor Manufacturing Comp. Ltd.

Kuan-Yu Yeh

Chih-Wei Chang

Ching-Hwanq Su

Min-Hsiu Hung

Yi-Hsiang Chao

Chun-Wen Nieh

Kan-Ju Lin

Yee-Chia Yeo

Huicheng Chang

Liang-Yin Chen

Su-Hao Liu

Huang-Yi Huang

Wei-Yip Loh

Hung-Hsu Chen

Meng-Han Chou

Ming-Hsing Tsai

Li-Wei Chu

Hung-Yi Huang

Yu-Hsiang Liao

Ya-Huei Li

Chi-Hung Chuang

The present disclosure provides a method to enlarge the process window for forming a source/drain contact. The method may include receiving a workpiece that includes a source/drain feature exposed in a source/drain opening defined between two gate structures, conformally depositing a dielectric layer over sidewalls of the source/drain opening and a top surface of the source/drain feature, anisotropically etching the dielectric layer to expose the source/drain feature, performing an implantation process to the dielectric layer, and after the performing of the implantation process, performing a pre-clean process to the workpiece. The implantation process includes a non-zero tilt angle.

Deposition window enlargement

A method for forming a semiconductor device structure is provided. The method includes forming a fin structure over a semiconductor substrate and forming a gate stack over the fin structure. The method also includes forming an epitaxial structure over the fin structure, and the epitaxial structure is adjacent to the gate stack. The method further includes forming a dielectric layer over the epitaxial structure and forming an opening in the dielectric layer to expose the epitaxial structure. In addition, the method includes applying a metal-containing material on the epitaxial structure while the epitaxial structure is heated so that a portion of the epitaxial structure is transformed to form a metal-semiconductor compound region.

Formation method of semiconductor device structure with metal-semiconductor compound region

A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate having a conductive region made of silicon, germanium or a combination thereof. The semiconductor device structure also includes an insulating layer over the semiconductor substrate and a fill metal material layer in the insulating layer. In addition, the semiconductor device structure includes a nitrogen-containing metal silicide or germanide layer between the conductive region and the fill metal material layers.

Semiconductor device with low resistivity contact structure

A method for forming a semiconductor device structure is provided. The method includes providing a semiconductor substrate including a conductive region made of silicon, germanium or a combination thereof. The method also includes forming an insulating layer over the semiconductor substrate and forming an opening in the insulating layer to expose the conductive region. The method also includes performing a deposition process to form a metal layer over a sidewall and a bottom of the opening, so that a metal silicide or germanide layer is formed on the exposed conductive region by the deposition process. The method also includes performing a first in-situ etching process to etch at least a portion of the metal layer and forming a fill metal material layer in the opening.

Semiconductor device with low resistivity contact structure and method for forming the same

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Taoyuan, Taiwan

Kuan-Yu Yeh