Toyota Jidosha Kabushiki Kaisha

Denso Corporation

Hamamatsu-Photonics K.k.

Mirise Technologies Corporation

Kozo Kato

Daisuke Kawaguchi

Masatake Nagaya

Yoshitaka Nagasato

Keisuke Hara

Shinichi Hoshi

Takashi Ushijima

A method of manufacturing a semiconductor device includes a trench forming step, a laser irradiation step and a peeling step. In the trench forming step, a trench is formed on a first main surface of a semiconductor substrate having a device structure formed thereon. In the laser irradiation step, a laser is irradiated from a second main surface of the semiconductor substrate to a plane surface that is positioned and extends at a predetermined depth of the semiconductor substrate. In the peeling step, a device layer is peeled off from the semiconductor substrate along the plane surface on which the laser is irradiated. The peeling step may be performed in a state in which the trenches are either unfilled or filled with a material having a lower coefficient of thermal expansion than the semiconductor substrate.

Manufacturing method of semiconductor device

Growing community of inventors

Nisshin, Japan

Kozo Kato