Tokyo Electron Limited

Kozo Kai

Seishi Murakami

Kenichi Kobayashi

Keiji Osada

Youichi Nakayama

Takamasa Chikuma

Susumu Kato

Chunmui Li

Kenji Shirasaka

In STEP, a mapping operation is carried out by a mapping device. In STEP, based on position information for the wafer (W) detected by the mapping operation, it is determined whether or not a wafer (W) position is in an abnormal state or not. When the wafer position is determined to be in the abnormal state (Yes), a closing/opening operation, in which a FOUP door () is temporarily closed and then opened, is carried out in STEP. In STEP, the number of times the FOUP door () is closed/opened (in other words, the number of times a port door () is closed/opened) is counted, and in STEP, it is determined whether or not this count value is less than a preset value. If the count value is less than the preset value (Yes), the processing in STEP-STEPis repeated once again.

Substrate processing system and substrate position correction method

A method of lowering a temperature of a substrate table uses a substrate W processing system including a first substrate table; one or more processing chambers, in each of which the first substrate tableis disposed, the processing chamber being configured to perform a predetermined process, with the substrate being placed on the first substrate table; a substrate transfer apparatusconfigured to transfer the substrate to the processing chamber; a transfer chamber in which the substrate transfer apparatusis disposed; and a second substrate table configured to cool the substrate. The method of lowering a temperature of a substrate table comprises the steps of first transfer in which the substrate W placed on the first substrate tableis transferred to the second substrate table by the substrate transfer apparatus, and second transfer in which the substrate placed on the second substrate table is transferred to the first substrate table. By repeating the step of first transfer and the step of second transfer, a heat of the first substrate tableis absorbed by the substrate W placed on the first substrate table, so that a temperature of the first substrate tableis lowered.

Method of lowering temperature of substrate table, computer-readable storage medium, and substrate processing system

A susceptor is located in a treating space of a CVD apparatus with a wafer placed in contact with a first surface of a susceptor. The susceptor is heated by a heating source to impart the heat to the wafer. A treating gas is supplied into a treating space and decomposed in a course of a reaction to form a film on the wafer. A guard ring is located on a second surface of the susceptor which is situated around the first surface of the susceptor. The guard ring and wafer are heated by the susceptor in the same way. The surface of the susceptor is substantially not exposed between the guard ring and the wafer and a temperature on the exposed surface of the guard ring and that on the exposed surface of the wafer are nearly equal to each other.

Heat treating apparatus

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Fuchu, Japan

Kozo Kai