Fujitsu Corporation

Kouta Yoshikawa

Tadahiro Imada

Yoshihiro Nakata

Shirou Ozaki

Yasushi Kobayashi

The invention provides an agent for post-etch treating a silicon dielectric film, including: at least one nitrogen-containing substance selected from the group consisting of ammonium bases and amine compounds; an acid; and at least one silicon-containing compound containing silicon, carbon and hydrogen. According to the present invention, it becomes possible to suppress an increase in the dielectric constant of a silicon dielectric film caused by etching.

Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device

A silicic coating of 2.4 g/cmor higher density, obtained by forming a silicic coating precursor with the use of at least one type of silane compound having a photosensitive functional group and thereafter irradiating the silicic coating precursor with at least one type of light. This silicic coating can be used as a novel barrier film or stopper film for semiconductor device.

Process for producing silicic coating, silicic coating and semiconductor device

The method of manufacturing the semiconductor device includes forming an insulating film above a semiconductor substrate, forming an opening in the insulating film, forming a conductive film above the insulating film with the opening formed, removing the conductive film above the insulating film to bury the conductive film in the opening, and processing a surface of the insulating film with a silicon compound including Si&#x2014;N or Si&#x2014;Cl.

Method of manufacturing semiconductor device

An interfacial roughness reducing film which is in contact, on one side thereof, with an insulating film and in contact, on a side opposite from the one side, with wiring comprises a Si&#x2014;O bond, and is formed using a composition containing a silicon compound that comprises at least one bond of Si&#x2014;N bonds and Si&#x2014;Cl bonds wherein the number of Si&#x2014;N bonds and Si&#x2014;Cl bonds combined per molecule of the compound is at least two. An interfacial roughness between the interfacial roughness reducing film and the wiring is smaller than that between the interfacial roughness reducing film and the insulating film.

Growing community of inventors

Kawasaki, Japan

Kouta Yoshikawa