Tokyo Electron Limited

Kousuke Koiwa

Yu Nagatomo

Ryuuu Ishita

Daisuke Tamura

Provided is an etching method for simultaneously etching first and second regions of a workpiece. The first region has a multilayered film configured by alternately laminating a silicon oxide film and a silicon nitride film and a second region has a silicon oxide film having a film thickness that is larger than that of the silicon oxide film in the first region. A mask is provided on the workpiece to at least partially expose each of the first and second regions. In the etching method, plasma of a first processing gas containing fluorocarbon gas, hydrofluorocarbon gas, and oxygen gas is generated within a processing container of a plasma processing apparatus. Subsequently, plasma of a second processing gas containing fluorocarbon gas, hydrofluorocarbon gas, oxygen gas, and a halogen-containing gas is generated within the processing container. Subsequently, plasma of a third processing gas containing oxygen gas is generated within the processing container.

Etching method

In a plasma etching method of performing a plasma etching on an amorphous carbon layer of a substrate to be processed by using an inorganic film as a mask, the substrate being mounted in a processing chamber, the plasma etching on the amorphous carbon layer is performed by using Ogas as a processing gas and the Ogas to flow in the processing chamber such that a residence time of the Ogas becomes 0.37 msec or less. The amorphous carbon layer is used as an etching mask of an etching target film formed on the substrate. The plasma etching is performed by using the Ogas only.

Growing community of inventors

Miyagi, Japan

Kousuke Koiwa