Tokyo Ohka Kogyo Co., Ltd.

Kousuke Doi

Hidekatsu Kohara

Toshimasa Nakayama

Satoshi Niikura

Takako Suzuki

Ken Miyagi

Nobuo Tokutake

Masaki Kurihara

Atsushi Sawano

Miki Kobayashi

Yusuke Nakagawa

Taku Nakao

Hiroshi Hosoda

Akira Katano

Remi Numata

Atsuko Hirata

Tsuyoshi Nakamura

Kenji Maruyama

Shinichi Kono

Sachiko Tamura

Taeko Ikegawa

Ryuusaku Takahashi

Kazuyuki Nitta

Taku Hirayama

Satoshi Shimatani

Shinichi Hidesaka

Mitsuo Hagihara

Kouichi Takahashi

Masahiro Masujima

Hiroyuki Ohnishi

Yasuhide Ohuchi

Tetsuya Nakajima

Kazuhiko Nakayama

Kouji Yonemura

Toshihiro Yamaguchi

Junichi Mizuta

Jyunichi Mizuta

The present invention provides a chemical amplification type positive photoresist composition which is excellent in storage stability as a resist solution in a bottle. A novolak resin or a hydroxystyrenic resin is reacted with a crosslinking agent to give a slightly alkali-soluble or alkali-insoluble resin having such a property that solubility in an aqueous alkali solution is enhanced in the presence of an acid, which is then dissolved in an organic solvent, together with (B) a compound generating an acid under irradiation with radiation to obtain a chemical amplification type positive photoresist composition wherein the content of an acid component is 10 ppm or less.

Chemically amplified positive photo resist composition and method for forming resist pattern

There is provided a method of producing a resist composition which yields a resist composition with good storage stability, and no fluctuation in characteristics between production lots. There are provided: a novolak resin solution formed by adding benzoquinone to a novolak resin solution produced by dissolving a novolak resin in an organic solvent; a positive photoresist composition comprising the novolak resin solution and a photosensitive component; a positive photoresist composition comprising the novolak resin solution, a photosensitive component, and hydroquinone; and a method of producing a positive photoresist composition involving mixing the novolak resin solution described above and a photosensitive component.

Novolak resin solution, positive photoresist composition and preparation method thereof

A composition includes (A) an alkali-soluble resin, (B) a quinonediazide ester of a compound represented by the following formula:and (C) a compound represented by the following formula:This composition is a positive photoresist composition that is excellent in sensitivity and definition and causes less shrink.

Positive photoresist composition

A phenol novolak resin has a peak intensity ratio of ortho-ortho bond (o-o)/ortho-para bond (o-p)/para-para bond (p-p) in a resin structure not substantially varying in each molecular weight fraction and has a weight average molecular weight (Mw) of 3000 to 20000 in terms of polystyrene, which peak intensity ratio is detected byC-NMR analysis. The phenol novolak resin can form both dense pattern and isolation pattern with good shapes in the formation of a fine resist pattern of not more than 0.35 &#x3bc;m and has satisfactory sensitivity, definition, and focal depth range properties, and has a resin composition being uniform in each molecular weight fraction. A process for producing the phenol novolak resin, and a positive photoresist composition using the resin are also provided.

Phenol novolak resin, production process thereof, and positive photoresist composition using the same

A novel copolymer includes a repeating unit (B) derived from an unsaturated carboxylic anhydride, a repeating unit (C) represented by Formula (II), and a repeating unit (D) represented by Formula (III).

Copolymer, photoresist composition, and process for forming resist pattern with high aspect ratio

A positive photoresist composition includes (A) an alkali-soluble novolak resin containing 1,2-naphthoquinonediazidosulfonyl groups substituting for part of hydrogen atoms of phenolic hydroxyl groups, (B) an ester of, for example, a compound represented by the following formula with a naphthoquinonediazidosulfonyl compound, and (C) a sensitizer:

A composition includes (A) an alkali-soluble resin having Mw of 1500 to 10000, (B) a quinonediazide ester of, for example, the following formula, and (C) a phenolic compound containing an acid-decomposable group. When a resin film 1 &mgr;m thick is prepared from the alkali-soluble resin (A), the resin film is completely dissolved in 2.38% by weight tetramethylammonium hydroxide aqueous solution at 23&deg; C. within ten seconds.

Positive photoresist composition and method of patterning resist thin film for use in inclined implantation process

A composition includes (A) a novolak resin containing at least 20% by mole of a m-cresol repeating unit and having a 1-ethoxyethyl group substituting for part of hydrogen atoms of phenolic hydroxyl groups, (B) a quinonediazide ester of, for example, the following formula, and (C) 1,1-bis(4-hydroxyphenyl)cyclohexane.

A positive photoresist composition includes (A) an alkali-soluble resin, (B) a photosensitizer including, for example, a quinonediazide ester of bis&lsqb;2,5-dimethyl-3-(2-hydroxy-5-methylbenzyl)-4-hydroxyphenyl&rsqb;methane, and (C) a compound having a gram absorption coefficient of 5 to 60 with respect to light with a wavelength of 365 nm.

Positive photoresist composition, substrate with a photosensitive film and process for imaging a resist pattern

A novel copolymer includes a repeating unit (A) represented by, for example, Formula (I) below, and a repeating unit (B) derived from an unsaturated carboxylic anhydride. The novel copolymer is suitable for the preparation of a photoresist composition that has satisfactory transparency, high sensitivity and definition and exhibits satisfactory DOF properties in the field of photolithography using a deep UV light source. By the use of the photoresist composition, a process forms a resist pattern with a high aspect ratio.

A positive photoresist composition includes (A) an alkali-soluble resin, in which part of phenolic hydroxyl groups is protected by an acid-decomposable group; (B) a quinonediazide ester; and (C) a compound which generates an acid upon irradiation of light with a wavelength of 365 nm. This positive photoresist composition can form a fine pattern of about 0.35 &mgr;m in the photolithographic process using i-ray (365 nm), is excellent in focal depth range properties in such an ultrafine region, and has a high sensitivity.

Positive photoresist composition comprising a phenolic compound having both an acid-decomposable group and a naphthoquinonediazide sulfonyl group

A novolak resin precursor is composed of bonded phenolic moieties, one of the hydrogen atoms in the o- or p-positions relative to the hydroxy group of each phenolic moiety is substituted with an alkyl or alkenyl group having 1 to 3 carbon atoms, and the other two hydrogen atoms are bonded through methylene bonds. The content of ortho-ortho bonding is 30 to 70% relative to the number of total methylene bonds and the weight average molecular weight of the precursor is 300 to 10,000. A novolak resin is obtained from this precursor, and a positive photoresist composition comprises this novolak resin. The invention provides a positive photoresist composition that comprises less binuclear compounds, suppresses scum formation, is excellent in terms of definition and coating performance and provides a resist pattern having satisfactory heat resistance.

Novolak resin precursor, novolak resin and positive photoresist composition containing the novolak resin

A positive photoresist composition includes (A) an alkali-soluble resin, (B) a quinonediazide ester of, e.g., bis&lsqb; -dimethyl- -( -hydroxy- -methylbenzyl)- -hydroxyphenyl&rsqb;methane and/or -bis&lsqb; -hydroxy- -( -hydroxybenzyl)- -methylbenzyl&rsqb;- -cyclohexylphenol, and (C) -bis(diethylamino)benzophenone. The composition exhibits high sensitivity and definition and improved focal depth range properties and underexposure margin.

Positive photoresist composition and process for forming resist pattern

Disclosed are a positive photoresist composition including (A) an alkali-soluble resin, (B) a photosensitizer containing a quinonediazide ester of, e.g., bis&lsqb;2,5-dimethyl-3-(2-hydroxy-5-methylbenzyl)-4-hydroxyphenyl&rsqb;methane and (C) e.g., 2,6-bis(2,5-dimethyl-4-hydroxybenzyl)-4-methylphenol; and a process including the steps of coating the composition onto a 8 to 12-inch substrate, drying, exposing and developing the same. The composition which can form a pattern having a good shape whose dimensional changes are minimized in a wide range over surface of the substrate, particularly in processes using a large-diameter substrate, and the process for forming a resist pattern using the composition are provided.

Positive photoresist composition and process for forming resist pattern using same

A positive photoresist composition includes (A) an alkali-soluble resin, and (B) a photosensitizer including an ester of a 1,2-naphthoquinonediazidesulfonyl compound with a compound of the following formula (I). This positive photoresist composition has satisfactory sensitivity, definition, and depth of focus properties, can form both dense patterns and isolation patterns with good shapes in the formation of mixed resist patterns, and can minimize inverted taper shape formation of isolation resist patterns induced by shifts of focal depth to the minus side.

Growing community of inventors

Kanagawa, Japan

Kousuke Doi