Tokyo Electron Limited

Kouki Suzuki

Sumi Tanaka

Jun Yamashita

Daisuke Toriya

Takayuki Kamaishi

Atsushi Ueda

Masakazu Ban

Koichi Yamazaki

Takehiro Ueda

Katsuyuki Koizumi

Toshiaki Fujisato

Takashi Mochizuki

Kazuhiro Furuki

Hwajun Noh

A substrate holder according to one embodiment of the present disclosure comprises a stage made of a dielectric material and configured to support a substrate; an attraction electrode provided in the stage and configured to electrostatically attract the substrate; and a heater configured to heat the stage. By applying a DC voltage to the attraction electrode, the substrate is electrostatically attached to a surface of the stage by a Johnsen-Rahbek force. The stage comprises an annular close contact area with which the substrate comes into close contact at a position corresponding to an outer periphery of the substrate on the surface of the stage; and a groove provided in an annular shape in a portion outside the close contact area, and a conductive deposition film formed by the raw material gas is accumulated in the groove.

Substrate holder and film forming apparatus

Chamber block

Liner for plasma processing apparatus

Disclosed is a substrate rotating device improved such that an amount of particle generation is remarkably reduced, and a substrate processing apparatus provided with the substrate rotating device. The substrate rotating device includes a driven rotary member, e.g., a driven ring, connected directly or indirectly to a substrate support member for supporting a substrate; and a driving rotary member, e.g., a drive rotor, that rotates in abutment against the driven rotary member to drive the driven rotary member for rotation. The driven rotary member and the driving rotary member are formed of ceramic materials, whose values of fracture toughness defined by JIS R1607 are different from each other, and/or whose values of three-point bending strength defined by JIS R1601 are different from each other.

Substrate processing apparatus and substrate rotating device

A processing gas is prevented from entering into a space below a placement table. A supporting surfacefor supporting the lower face of a placement tableis provided at an inner circumferential portion of the upper end of a support. A circumferentially extending purge gas grooveis formed outside the supporting surface, in an intermediate circumferential portion of the upper end of the support. A narrow flow pathis provided outside the purge gas groove, at a position corresponding to an outer circumferential portion of the upper end of the support. A purge gas fed from purge gas-feeding meansinto the purge gas groove diffuses in the circumferential direction in the purge gas grooveand flows out to the outside from the narrow flow path. Such a flow of the purge gas prevents a processing gas from entering into the purge gas grooveand a space Sbelow the placement table.

Heat treatment apparatus

When the state of the vacuum processing chamber is switched to an idle state in which an insulating fluid is circulated while a semiconductor wafer W is not placed in the vacuum processing chamber and no plasma is generated in the vacuum processing chamber, nitrogen gas purging (Npurging) of the inside of the vacuum processing chamber is started, and the pressure in the vacuum processing chamber is controlled to a predetermined level, for example, about 27 Pa (200 mTorr). This makes it possible to prevent a component in the vacuum processing chamber of a plasma processor from being charged to high voltage, so that an insulative material can be protected against breakdown caused by electric discharge or the like.

Method for suppressing charging of component in vacuum processing chamber of plasma processing system and plasma processing system

A processing gas is prevented from entering into a space below a placement table. A supporting surface for supporting the lower face of a placement table is provided at an inner circumferential portion of the upper end of a support column. A circumferentially extending purge gas groove is formed outside the supporting surface, in an intermediate circumferential portion of the upper end of the support column. A narrow flow path is provided outside the purge gas groove, at a position corresponding to an outer circumferential portion of the upper end of the support column. A purge gas diffuses in the circumferential direction in the purge gas groove and flows out to the outside from the narrow flow path. Such a flow of the purge gas prevents a processing gas from entering into the purge gas groove and a space below the placement table.

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Nirasaki, Japan

Kouki Suzuki