Denso Corporation

Kouji Eguchi

Youhei Oda

Yusuke Yamashita

Takashi Nakano

Shinichi Adachi

Teruaki Kumazawa

A semiconductor device includes; a schottky diode; a semiconductor substrate that includes a first surface and a second surface opposite to the first surface; a schottky electrode that is placed on the first surface and schottky-contacts to the semiconductor substrate; a first electrode placed on the schottky electrode; and a second electrode that is placed on the second surface and is connected to the semiconductor substrate. The schottky electrode is made of a metal material that is a columnar crystal; and a content of carbon on the schottky electrode is less than 6&#xd7;10cmin at least a part of an area of the schottky electrode.

Semiconductor device

A semiconductor device manufacturing method is provided. In a semiconductor wafer prepared, the width of a dicing line is larger than a cut region to be diced with a dicing blade, a first chip forming region and a second chip forming region are adjacent and have the dicing line therebetween, some of the pads are formed on a first chip forming region side, and the remaining pads are formed on a second chip forming region side. The semiconductor wafer is diced with the dicing blade in such manner that, when the some of the pads are diced, a part of the dicing blade on the second chip forming region side does not abut the some of the pads, and, when the remaining pads are diced, a part of the dicing blade on the first one chip forming region side does not abut the remaining pads.

Semiconductor wafer and semiconductor device manufacturing method

A semiconductor device includes a substrate, a laminated wiring layer unit, a nitride film disposed on the laminated wiring layer unit, a semiconductor element portion, a sealing portion surrounding the element portion. In the sealing portion, multiple wiring layers are connected with a sealing layer to configure a sealing structure which surrounds the element portion. The laminated wiring layer unit includes an uppermost layer which is made of material having higher adhesion to an uppermost wiring layer, and a protection insulating film made of material having higher adhesion to the sealing layer than the nitride film is disposed on the nitride film. In the sealing portion, a via-hole is defined in the protection insulating film, the nitride film, and the uppermost insulating film to partially expose the uppermost wiring layer. The sealing layer is embedded into the via-hole and is also disposed on a protection insulating film around the via-hole.

Semiconductor device and manufacturing method of the same

A method for manufacturing a semiconductor device includes: preparing a semiconductor substrate, in which a first semiconductor layer is formed on a substrate; forming a first concave portion in the first semiconductor layer; forming trenches on the first semiconductor layer in the first concave portion; epitaxially growing a second semiconductor layer for embedding in each trench and the first concave portion; forming a SJ structure having PN columns including the second semiconductor layer in each trench and the first semiconductor layer between the trenches; and forming the vertical MOSFET by: forming a channel layer and a source region contacting the channel layer on the SJ structure; forming a gate electrode over the channel layer through a gate insulating film; forming a source electrode connected to the source region; and forming a drain electrode on a rear of the substrate.

Semiconductor device having vertical MOSFET with super junction structure, and method for manufacturing the same

In a semiconductor device manufacturing method, an insulating layer is formed on a front surface of a semiconductor substrate. Trenches are formed in the substrate by using the insulating layer as a mask so that a first portion of the insulating layer is located on the front surface between the trenches and that a second portion of the insulating layer is located on the front surface at a position other than between the trenches. The entire first portion is removed, and the second portion around an opening of each trench is removed. The trenches are filled with an epitaxial layer by epitaxially growing the epitaxial layer over the front surface side. The front surface side is polished by using the remaining second portion as a polishing stopper.

Growing community of inventors

Kariya, Japan

Kouji Eguchi