Tokyo Electron Limited

Tokyo Electron Limi Ted

Kotaro Ooishi

Hisashi Kawano

Keisuke Egashira

Masahito Hamada

Yosuke Hachiya

Shigenori Kamei

Koji Yamashita

Takehiko Orii

Naoki Shindo

Norihiro Ito

Koji Tanaka

Hiroaki Inadomi

Masami Yamashita

Itaru Kanno

Mitsunori Nakamori

Yosuke Kawabuchi

Kouzou Tachibana

Takuro Masuzumi

Yoshiteru Fukuda

Shinichiro Shimomura

Yasuyuki Ido

Jun Nogami

Yu Tsurifune

Disclosed is a liquid processing method of drying a substrate held horizontally after supplying deionized water to the substrate. The liquid processing method includes: supplying the deionized water to a front surface of the substrate; supplying a first solvent to the front surface of the substrate after supplying the deionized water; supplying a water-repellent agent to the front surface of the substrate to impart water-repellency to the front surface of the substrate; supplying a second solvent to the front surface of the substrate to which water-repellency is imparted; and removing the second solvent from the front surface of the substrate. A specific gravity of the first solvent is smaller than a specific gravity of the water-repellent agent, and a specific gravity of the second solvent is larger than the specific gravity of the water-repellent agent.

Liquid processing method, substrate processing apparatus, and storage medium

Disclosed is a substrate liquid processing apparatus. The substrate liquid processing apparatus includes a processing unit, a nozzle, a silylation liquid supply mechanism, and a blocking fluid supply mechanism. The processing unit performs a water repellency imparting processing on a substrate by supplying a silylation liquid to the substrate. The nozzle includes an ejection port configured to supply the silylation liquid to the substrate positioned in the processing unit, and a silylation liquid flow path in which the silylation liquid flows toward the ejection port. The silylation liquid supply mechanism supplies the silylation liquid to the silylation liquid flow path in the nozzle through a silylation liquid supply line. The blocking fluid supply mechanism supplies a blocking fluid that blocks the silylation liquid within the silylation liquid flow path in the nozzle from an atmosphere outside the ejection port.

Substrate liquid processing apparatus having nozzle with multiple flow paths and substrate liquid processing method thereof

The present disclosure provides a substrate processing apparatus including: a substrate processing chamber configured to process a substrate on which a target layer to be removed is formed on the surface of an underlying layer; a substrate holding unit provided in the substrate processing chamber and configured to hold the substrate; a mixed liquid supplying unit configured to supply a mixed liquid of sulfuric acid and hydrogen peroxide to the substrate held by the substrate holding unit in a mixing ratio of the hydrogen peroxide and a temperature that does not damage the underlying layer while removing the target layer; and an OH-group supplying unit configured to supply a fluid containing OH-group to the substrate in an amount that does not damage the underlying layer when the mixed liquid and the OH-group are mixed on the substrate.

Substrate processing apparatus and substrate processing method

A film removing device includes an approach stage having a flat approach part having a surface substantially flush with the surface of a substrate supported on a support member. The flat approach part faces a first side surface of the substrate at a corner of the substrate where the first side surface and a second side surface of the substrate join. A film removing nozzle spouts a solvent toward a peripheral part of the substrate and sucks a solution while being moved along the second side surface and the approach stage. A gas is spouted into a gap between the flat approach part and the corner of the substrate so that the gas flows through the gap toward the second side surface.

Film removing device and film removing method

Growing community of inventors

Kumamoto, Japan

Kotaro Ooishi