Screen Holdings Co., Ltd.

Kota Sotoku

Masanobu Sato

Takayoshi Tanaka

Hiroaki Takahashi

Toyohide Hayashi

Masaki Inaba

Akito Hatano

Hiroyuki Yashiki

Takayuki Gohara

A hot plate of a resist removing apparatus is disposed in a processing space and heated to a predetermined temperature. A substrate has on an upper surface thereof, a pattern of a resist having a surface on which an altered layer is formed. A moving mechanism moves a plurality of lift pins relative to a hot plate. An upper surface of the substrate is supplied with ozone gas. A control part disposes the substrate at a first processing position with a clearance from the hot plate and removes the altered layer by using the ozone gas, and subsequently controls the moving mechanism to dispose the substrate at a second processing position with a clearance smaller than that between the first processing position and the hot plate and removes the resist by using the ozone gas. It is thereby possible to efficiently remove the resist from the substrate while preventing popping.

Resist removing method and resist removing apparatus

The substrate processing method is a substrate processing method for removing a resist having a hardened layer from a substrate on a surface of which the resist is formed, including: a substrate holding step of holding the substrate; and a resist stripping step of stripping the resist from the surface of the substrate by supplying ozone gas and superheated steam to a plural-fluid nozzle for producing liquid drops through mixing a plurality of fluids to discharge mixed gas of ozone gas and superheated steam containing liquid drops of ozone water produced by mixing ozone gas and superheated steam from the plural-fluid nozzle toward the surface of the substrate.

Substrate processing method and substrate processing device

A substrate processing apparatus including a plurality of baking chambers stacked in a prescribed direction, each baking chamber carrying out heat treatment of a substrate in its interior, a processing unit having a liquid processing chamber separate from the baking chambers and carrying out liquid processing of the substrate using the processing liquid, and an enclosing isolating space that encloses the sides of the plurality of baking chambers and isolates the baking chambers from the surrounding area.

Substrate processing method and substrate processing apparatus

In a substrate processing apparatus, an ejection surface of an ejection head located at a standby position is immersed in an immersion liquid retained in a reservoir during standby of the ejection head. This prevents drying of a plurality of outlets provided in the ejection head and drying of processing liquid flow passages that communicate with the outlets. It is thus possible to suppress or prevent clogging of the fine outlets. When the ejection head resumes processing on a substrate, the immersion liquid in the reservoir is discharged and then a liquid removing part removes the immersion liquid adhering to the ejection surface. Accordingly, it is possible to prevent the immersion liquid remaining on the ejection surface from dropping and adhering to the substrate (so-called 'liquid dripping') when, for example, the ejection head is moved to a position above the substrate.

Substrate processing apparatus and standby method for ejection head

A substrate treatment method and apparatus including a change controlling unit which changes at least one of a protection liquid application position relative to a liquid droplet nozzle and a protection liquid incident angle relative to the liquid droplet nozzle, the protection liquid application position being a position at which the protection liquid is applied on an upper surface of the substrate, the protection liquid incident angle being an angle at which the protection liquid is incident on the liquid application position; wherein the change controlling unit controls the liquid application position and the incident angle in a first condition when the spraying region is located on an upper surface center portion of the substrate, and controls the liquid application position and the incident angle in a second condition when the spraying region is located on an upper surface peripheral portion of the substrate.

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Kyoto, Japan

Kota Sotoku