Kabushiki Kaisha Toshiba

Shibaura Mechatronics Corporation

Kabushiki Kaisha Topcon

Kosuke Takai

Takeharu Motokawa

Tomoaki Yoshimori

Yoshihisa Kase

Makoto Karyu

According to one embodiment, a method is disclosed for manufacturing a reflective mask. The method can include forming a reflection layer on a major surface of a substrate. The method can include forming an absorption layer on the reflection layer. The method can include forming a pattern region in the absorption layer. In addition, the method can include forming a light blocking region surrounding the pattern region in the absorption layer and the reflection layer. The forming the light blocking region includes etching-processing the reflection layer using a gas containing chlorine and oxygen.

Method for manufacturing reflective mask and apparatus for manufacturing reflective mask

According to one embodiment, a light-reflective photomask including a circuit pattern area, and an outside area positioned outside the circuit pattern area includes a substrate, a low-reflectivity layer provided in both the circuit pattern area, and the outside area, formed on the substrate, including at least a conductive layer, and comprising a first reflectivity for deep ultraviolet light, a multilayer reflection layer provided in the circuit pattern area, and formed on the low-reflectivity layer, and a light-absorber provided in the circuit pattern area, formed on the multilayer reflection layer, including a circuit pattern, and comprising a second reflectivity for deep ultraviolet light. The first reflectivity is lower than or equal to the second reflectivity.

Light-reflective photomask and mask blank for EUV exposure, and manufacturing method of semiconductor device

A light reflecting mask includes a reflecting layer which is provided on a substrate and reflects light, an absorbing layer which is provided on the reflecting layer and absorbs light, a device pattern which is formed in a first region of the absorbing layer, and a reflectance measuring pattern which is formed in a second region of the absorbing layer. The reflectance measuring pattern is a diffraction grating.

Light reflecting mask, exposure apparatus, and measuring method

To provide a reflection-type mask having a reduced shadowing effect, capable of phase shift exposure and having a shading frame of sufficient shading performance. The mask includes a substrate, a multilayer reflective filmwhich is formed above the substrate, and which reflects exposure light, a first photoabsorber layerwhich is formed above the multilayer reflective film, and which absorbs the exposure light, a circuit pattern regionconstituted, in conformity with a predetermined circuit pattern, of an opening formed as a result of removal of the first photoabsorber layerand an absorbing portion where the first photoabsorber layer remains, and a shading regionhaving a reflectance with respect to the exposure light lower than that in the absorbing portion of the circuit pattern region

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Yokohama, Japan

Kosuke Takai