Tokyo Electron Limited

Kosuke Kariu

Hiroto Ohtake

Toshihisa Ozu

Akinori Kitamura

Shota Yoshimura

Takashi Tsukamoto

Hironori Matsuoka

Hai Woo Lee

An organic film can be etched while suppressing damage on an underlying layer. A method of etching the organic film includes etching the organic film within a processing vessel of a plasma processing apparatus which accommodates a processing target object. A processing gas containing a hydrogen gas and a nitrogen gas is supplied into the processing vessel, and plasma of the processing gas is generated. Further, a flow rate ratio of the hydrogen gas to a flow rate of the processing gas is set to be in a range from 35% to 75%, and a high frequency bias power for ion attraction to the processing target object is set to be in a range from 50 W to 135 W, in the etching of the organic film.

Method of etching organic film

An etching method can selectively etch a second region formed of silicon oxide in a target object with respect to a first region formed of silicon in the target object. The etching method includes (a) processing the target object with plasma of a first processing gas containing fluorocarbon and fluorohydrocarbon by generating the plasma of the first processing gas with a microwave, and (b) after the processing of the target object with the plasma of the first processing gas, processing the target object with plasma of a second processing gas containing fluorocarbon by generating the plasma of the second processing gas with the microwave.

Etching method

A semiconductor device manufacturing method includes exciting a processing gas containing a HBr gas and a Clgas within a processing chamber that accommodates a target object including a substrate, regions made of silicon, which are protruded from the substrate and arranged to form a gap, a metal layer formed to cover the regions, a polycrystalline silicon layer formed on the metal layer, and an organic mask formed on the polycrystalline silicon layer. The Clgas is supplied at a flow rate of about 5% or more to about 10% or less with respect to a flow rate of the HBr gas in the processing gas.

Semiconductor device manufacturing method

Growing community of inventors

Miyagi, Japan

Kosuke Kariu