Toshiba Memory Corporation

Kioxia Corporation

Kosuke Horibe

Kei Watanabe

Soichi Yamazaki

Atsuko Sakata

Toshiyuki Sasaki

Keisuke Kikutani

Junichi Wada

Mitsuhiro Omura

Shinichi Nakao

Shinya Okuda

Yuya Matsubara

Kazuhito Furumoto

Yasuhito Yoshimizu

Masayuki Kitamura

Kouji Matsuo

Yusuke Oshiki

Jun Nishimura

Hideyuki Kinoshita

Junichi Hashimoto

Shunsuke Ochiai

Tomo Hasegawa

Hisashi Harada

Kaori Narumiya

Takehiro Kondoh

Yusuke Kondo

Junya Fujita

A semiconductor device includes: a stacking part in which the plurality of conductor layers are separately stacked in a z direction; a stair part that is arranged alongside the stacking part in a y direction and in which the plurality of conductor layers are extended in the y direction in a stair shape; a first insulating film covering at least part of the stair part; a second insulating film covering at least part of the first insulating film and different from the first insulating film; and a contact connected with one of the plurality of conductor layers and penetrating through the first insulating film and the second insulating film. The linear expansion coefficient of the second insulating film is larger than the linear expansion coefficient of the first insulating film.

Semiconductor device with multilayer insulating layer in recess and method of manufacturing the same

In one embodiment, the semiconductor device includes a first insulator including Si (silicon) and O (oxygen). The device further includes a first interconnect provided in the first insulator and including a metal element. The device further includes a second insulator provided on the first insulator and the first interconnect and including Si, C (carbon) and N (nitrogen), content of Si—H groups (H represents hydrogen) in the second insulator being 6.0% or less, content of Si—CHgroups in the second insulator being 0.5% or less. The device further includes a second interconnect provided on the first interconnect in the second insulator and including the metal element.

Semiconductor device and method of manufacturing the same

According to one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming a second film on the first film. The method further includes forming a recess in the first film using the second film as a mask. The second film includes a first layer having carbon and a second layer having carbon formed on the first layer. The second layer has a second carbon density lower than a first carbon density of the first layer.

Manufacturing method of semiconductor device

According to one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming a second film on the first film. The second film includes fluoride of a first metal element having a first boiling point of 800&#xb0; C. or higher and fluoride of a second metal element having a second boiling point of 800&#xb0; C. or higher. The second metal element is different from the first metal element. The method further includes etching the first film using the second film as an etching mask and etching gas that includes fluorine.

Method of manufacturing semiconductor device

A semiconductor device of an embodiment includes a control circuit arranged on a substrate, a first conductive layer arranged on the control circuit and containing a first element as a main component, a multilayer structure arranged on the first conductive layer and configured such that multiple second conductive layers and multiple insulating layers are alternately stacked on each other, a memory layer penetrating the multilayer structure and reaching the first conductive layer at a bottom portion, a first layer arranged between the control circuit and the first conductive layer and containing the first element as a main component, and a second layer arranged between the control circuit and the first layer and containing, as a main component, a second element different from the first element.

Semiconductor device

A method of manufacturing a semiconductor device includes forming a mask layer including aluminum or an aluminum compound on a layer to be etched comprising at least one first metal selected from tungsten, tantalum, zirconium, hafnium, molybdenum, niobium, ruthenium, osmium, rhenium, and iridium. The method of manufacturing a semiconductor device further includes patterning the mask layer, and etching the layer to be etched by using the patterned mask layer to form a hole or a groove in the layer to be etched.

Method of manufacturing semiconductor device and etching mask

A semiconductor device includes a stacked body including a plurality of electrode layers stacked with an insulator interposed; a columnar portion provided in the stacked body and extending in a stacking direction of the electrode layers; and a first separation region provided in the stacked body and extending in a first direction. The stacked body includes a memory cell array and a staircase portion arranged in the first direction, the memory cell array including memory cells provided along the columnar portion, and the staircase portion including a plurality of terraces arranged along the first direction. The first separation region includes a first portion and a second portion in the staircase portion, the first portion having a first width in a second direction crossing the first direction, and the second portion having a second width in the second direction. The second width is narrower than the first width.

Semiconductor device and method for manufacturing same

According to one embodiment, a method for manufacturing a semiconductor device includes forming a mask layer on a layer to be etched, the mask layer containing tungsten and boron, a composition ratio of the tungsten being not less than 30%, patterning the mask layer, and performing a dry etching to the layer to be etched using the mask layer being patterned, and forming a hole or a slit in the layer to be etched.

Method for manufacturing semiconductor device

Growing community of inventors

Yokkaichi Mie, Japan

Kosuke Horibe