Mentor Graphics Corporation

Other

Mentor Graphics, a Siemens Business

Konstantinos G Adam

Yuri Granik

Michael Christopher Lam

Nicolas Bailey Cobb

James C Word

Uwe Hollerbach

John L Sturtevant

Ananthan Raghunathan

Germain Louis Fenger

Shumay Dou Shang

Christopher Clifford

Sergiy Komirenko

Huikan Liu

Dmitry Medvedev

Yunfei Deng

Yuan He

Disclosed are techniques for processing layout designs based on dynamically-generated lithographic models. Lithographic models are determined for a plurality of regions of a reticle prior to lithographic simulation. During lithographic simulation, lithographic models for a small area within a particular region are generated based on the lithographic models for the particular region, the lithographic models for one or more neighboring regions, and location information of the small area relative to the region and to the one or more neighboring regions. The lithography models comprise illuminating and imaging system models and mask electro-magnetic field models.

Dynamic model generation for lithographic simulation

Aspects of the disclosed technology relate to techniques for using hotspot simulation to make wafer rework decisions. Metrology data of photoresist patterns created based on a layout design for a circuit design by a photolithographic processing step are received during a lithographic process. Hotspots of interest are selected based on comparing the metrology data with simulated metrology data associated with hotspots. The simulated metrology data and information of the hotspots are generated by performing lithographic simulation on the layout design before the lithographic process and stored in a library of potential hotspots. Lithography simulation is performed on the selected hotspots of interest using process conditions of the photolithographic processing step to generate simulated hotspot data. The simulated hotspot data are analyzed to determine whether rework of the one or more wafers or a wafer lot to which the one or more wafers belong is needed.

Simulation-assisted wafer rework determination

A set of original model candidates are first divided into groups of original model candidates. Child model candidates are generated by performing crossover on each of the groups of original model candidates without mutation. From the original model candidates and the child model candidates, a set of new model candidates are derived, which includes: selecting a group of new model candidates from each group of the original model candidates and the corresponding child model candidates, selecting an additional new model candidate if adding the additional new model candidate increases overall diversity, and performing niche clearing to keep a number of the new model candidates in each of niches from exceeding a maximum number. The dividing, generating and deriving operations are then iterated. Model caching may be performed by restricting the crossover to the model term level or above.

Lithography model calibration via cache-based niching genetic algorithms

Aspects of the disclosed techniques relate to techniques for resist simulation in lithography. Local minimal light intensity values are determined for a plurality of sample points in boundary regions of an aerial image of a feature to be printed on a resist coating, wherein each of the local minimal light intensity values represents a minimum light intensity value for an area surrounding one of the plurality of sample points. Based on the local minimal light intensity values, horizontal development bias values for the plurality of sample points are then determined. Finally, resist contour data of the feature are determined based at least on the horizontal development bias values.

Horizontal development bias in negative tone development of photoresist

Aspects of the invention relate to techniques of optical simulation for topographically non-uniform substrates. A layout design is simulated to generate an aerial image based on optical models for different types of substrates and for transition regions, along with models for one or more categories of light signals. The one or more categories of light signals comprise trench side-wall reflection signals, trench radiation signals, and trench corner diffraction signals. The one or more categories of light signals may further comprise gate scattering signals and interconnect scattering signals. The models for the one or more categories of light signals may be calibrated with experimental data.

Optical proximity correction for topographically non-uniform substrates

A method for determining kernels in a sum of coherent systems (SOCS) approximation is provided. Information for an object to be simulated in a manufacturing process is determined. For example, information based on geometries that are included in a layout or mask is determined. A set of kernels from a transmission cross coefficient (TCC) matrix are also determined. The set of kernels may be weighted by importance values in an order of importance. The kernels may then be re-ordered based on the information for the object. These kernels are then re-ordered in the SOCS series to reflect their order of importance. The SOCS series of kernels is then truncated at the number of kernels desired. Accordingly, by re-ordering the kernels that may be more relevant to the object to include higher weights, when the truncation occurs, the kernels that are most relevant may be included in the SOCS approximation.

Sum of coherent systems (SOCS) approximation based on object information

Disclosed are techniques for simulating and correcting the mask shadowing effect using the domain decomposition method (DDM). According to various implementations of the invention, DDM signals for an extreme ultraviolet (EUV) lithography mask are determined for a plurality of azimuthal angles of illumination. Base on the DDM signals, one or more layout designs for making the mask may be analyzed and/or modified.

Simulation and correction of mask shadowing effect

A system for estimating image intensity within a window area of a wafer using a SOCS decomposition to determine the horizontal and vertical edge fragments that correspond to objects within the window area. Results of the decomposition are used to access lookup tables that store data related to the contribution of the edge fragment to the image intensity. Each lookup table stores data that are computed under a different illumination and feature fabrication or placement conditions.

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Belmont, CA, United States of America

Konstantinos G Adam