Samsung Electronics Co., Ltd.

Kolake Mayya Subramanya

Sang-Gyun Woo

Hyun-Woo Kim

Jin Kuk Hong

Jung-hwan Hah

Hata Mitsuhiro

In-Seok Yeo

Provided are a mask pattern including a silicon-containing self-assembled molecular layer, a method of forming the same, and a method of fabricating a semiconductor device. The mask pattern includes a resist pattern formed on a semiconductor substrate and the self-assembled molecular layer formed on the resist pattern. The self-assembled molecular layer has a silica network formed by a sol-gel reaction. To form the mask pattern, first, the resist pattern is formed with openings on an underlayer covering the substrate to expose the underlayer to a first width. Then, the self-assembled molecular layer is selectively formed only on a surface of the resist pattern to expose the underlayer to a second width smaller than the first width. The underlayer is etched by using the resist pattern and the self-assembled molecular layer as an etching mask to obtain a fine pattern.

Mask pattern for semiconductor device fabrication, method of forming the same, and method of fabricating finely patterned semiconductor device

The present invention provides methods of forming uniform nanoparticle based monolayer films with a high particle density on the surface of a substrate comprising (a) forming a surface modifying layer on a substrate using a material comprising a first functional group that chemically binds to the substrate and a second functional group comprising a group capable of forming van der Waals forces, (b) applying to the surface modifying layer a solution comprising nanoparticles, and (c) curing the resultant structure formed at step (b) for a predetermined time to form a nanoparticle based monolayer film. The present invention further provides substrates and devices comprising the nanoparticle based monolayer films.

Methods of forming nanoparticle based monolayer films with high particle density and devices including the same

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Suwon-si, South Korea

Kolake Mayya Subramanya