Tokyo Electron Limited

Koji Ushimaru

Yasuhiro Kuga

Masashi Itonaga

Yukinobu Otsuka

Shinsuke Takaki

Ryohei Fujise

A substrate processing apparatus includes: a heat processing unit configured to perform a heat process on a substrate having a film formed on the substrate; and a control unit configured to control the heat processing unit, wherein the heat processing unit comprises: a heater configured to support and heat the substrate; a chamber configured to cover the substrate supported on the heater; a gas ejector having a head in which ejection holes are formed, and configured to eject a gas from the ejection holes toward a surface of the substrate; an outer peripheral exhauster configured to evacuate a processing space inside the chamber from an outer peripheral region located further outward than a peripheral edge of the substrate supported on the heater; and a central exhauster configured to evacuate the processing space from a central region located further inward than the peripheral edge of the substrate supported on the heater.

Substrate processing apparatus, substrate processing method, and storage medium

A substrate can be placed on a placing table horizontally. When placing the substrate on the placing table having multiple protrusions configured to support the substrate, the substrate is attracted to the placing table while performing a suction from a suction hole configured to attract a position, different from positions located above the protrusions, of the substrate placed on the placing table, and then, a suction force of the suction hole is reduced. Accordingly, it is possible to place the substrate on the placing table while correcting the flexure. Further, the substrate can be horizontally placed on the placing table since deformation of the wafer, caused by attracting a bottom surface of the wafer strongly, is suppressed.

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Koshi, Japan

Koji Ushimaru