Horiba, Ltd.

Rohm Co., Ltd.

Renesas Technology Corp.

National Institute of Advanced Industrial Science and Technology

Koji Tominaga

Toshihide Nabatame

Kunihiko Iwamoto

Tetsuji Yasuda

Koichi Matsumoto

Shuji Takada

Tomoaki Nishimura

Hiroshi Funakubo

Tsuyoshi Horikawa

Akira Toriumi

Tsuyoshi Nakanishi

Hiroki Tanabe

Tsukasa Satake

Mitsuru Honjo

A method of manufacturing a metal compound thin film is disclosed. The method may include forming a first metal compound layer on a substrate by atomic layer deposition, performing annealing on the first metal compound layer in an atmosphere containing a nitrogen compound gas, thereby diffusing nitrogen into the first metal compound layer, and forming a second metal compound layer on the first metal compound layer by atomic layer deposition.

Semiconductor device, method of manufacturing the same, and method of manufacturing metal compound thin film

After the surface of the substrate is cleaned, an interface layer or an antidiffusion film is formed. A metal oxide film is built upon the antidiffusion film Annealing is done in an NHatmosphere so as to diffuse nitrogen in the metal oxide film. Building of the metal oxide film and diffusion of nitrogen are repeated several times, whereupon annealing is done in an Oatmosphere. By annealing the film in an Oatmosphere at a temperature higher than 650&#xb0; C., the leak current in the metal oxide film is controlled.

Metallic compound thin film that contains high-k dielectric metal, nitrogen, and oxygen

This invention provides a thin film deposition process making it possible to form a thin film having a desired composition with good reproducibility and high efficiency; a thin film deposition device therefore; a FTIR gas analyzer used in the thin film deposition process; and a mixed gas supplying device used in the thin film deposition process. The thin film deposition process comprises the steps of mixing a plurality of organic metal gases in a gas mixing chamber and supplying the mixed gas into a reaction chamber to deposit a thin film on a substrate positioned in the reaction chamber, wherein the mixture ratio between/among the organic metal gases supplied into the gas mixing chamber is measured with a FTIR gas analyzer fitted to either the gas mixing chamber or the reaction chamber and then on the basis of results of the measurement, the flow rates of the organic metal gases are individually adjusted.

Thin film deposition device using an FTIR gas analyzer for mixed gas supply

Method of fabricating a metal oxynitride thin film that includes a first annealing of a metal oxide film in a nitrogen-containing atmosphere to form a metal oxynitride film and a second annealing of the metal oxynitride film in an oxidizing atmosphere

A metal oxide thin film may be obtained by providing a source gas and an oxidizer gas. The source gas may include a hydrolyzable metallic compound. The oxidizer gas may include a hydrate of a metal salt. The metal oxide thin film may be obtained by alternately feeding the source gas and the oxidizer gas into a reaction chamber in which a substrate is placed.

Metal thin film and semiconductor comprising a metal thin film

To provide a semiconductor device that enables to suppress a defect density of a gate insulating film of an MISFET, gain a sufficient electric characteristic thereof, and make an Equivalent Oxide Thickness (EOT) of the gate insulating film 1.0 nm or less. The MISFETs are formed to have the gate insulating film formed on a main surface of a silicon substrate, and a gate electrode formed on the gate insulating film, wherein the gate insulating film includes a metal silicate layer formed by a metal oxide layer and a silicon oxide layer and the metal silicate layer is formed so as to have concentration gradients of metal and silicon from a silicon substrate side toward a gate electrode side.

Semiconductor device and manufacturing method thereof

A metal atomic layer and an oxygen atomic layer are formed in this order by ALD, followed by rapid heating through RTA (Rapid Thermal Annealing). This cycle of steps is repeated to form a high dielectric constant film.

Film formation apparatus

A high dielectric gate insulating film having the structure that a high-nitrogen layer, a low-nitrogen layer, and a high-nitrogen layer are layered in this order from a silicon-substrate side.

Semiconductor device, process for producing the same and process for producing metal compound thin film

An inexpensive, high-performance pH sensor measure the surface of a solid substance in a simple manner, comprising an ion sensing partwhich responds to pH, a reference electrodea gel-form ion permeable substancewhich has a predetermined pH value and covers the ion sensing partand reference electrodeand a cover memberwhich houses the ion permeable substanceand has an openingformed at a position near the abovementioned ion sensing part

pH sensor

A microflow sensor element for obtaining a response quickly with high response sensitivity regardless of the direction of an air flow. A pyroelectric detection unit is provided on a substrate, the pyroelectric detection unit having an upper and a lower electrode which are respectively provided on the surface and undersurface of a ferroelectric thin film. A heater portion whose temperature is modulated periodically as designated is provided on the upper electrode via a thin film of insulating material.

Microflow sensor element and manufacturing method thereof

A detector,for use in infrared gas analyzers has two compartments,and,to be filled with gas G showing the same absorption characteristics as the gas to be measured and which are arranged in series with a load cell,and the gas compartments,and,communicate with each other via a gas channel,in which a pyroelectric flow detector element,is provided. Pyroelectric flow detector element B is produced by a process which includes the steps of forming a lower electrode,on a substrate,forming a thin ferroelectric film,on the lower electrode, forming an upper electrode,on the thin ferroelectric film, patterning the upper electrode, the thin ferroelectric film and the lower electrode in that order by photolithography, with gas passage holes,being also formed, thereafter forming a thin insulator film,that covers a pyroelectric sensing portion,that is composed of the upper electrode, the thin ferroelectric film and the lower electrode, with gas passage holes and contact holes,and,being also formed in said thin insulator film, forming a heating electrode film on the thin insulator film, patterning the heating electrode film by photolithography, allowing a portion of the heating electrode film to drop in the contact holes to make lead-ins for the upper and lower electrodes, and etching away that part of the substrate which is just under the pyroelectric sensing portion to form an opening

Growing community of inventors

Kyoto, Japan

Koji Tominaga