Tokyo Electron Limited

Central Glass Company, Limited

Koji Takeya

Takashi Fuse

Jun Lin

Kyo Tsuboi

Tadashi Kotsugi

Akifumi Yao

Mitsuhiro Tachibana

Nobuhiro Takahashi

Kunihiro Yamauchi

Kazuaki Nishimura

Junichiro Matsunaga

Tatsuo Miyazaki

Ayano Hagiwara

Masashi Matsumoto

Shinichi Kawaguchi

In a substrate processing method for performing predetermined processing on a substrate, which has a processing target film, accommodated in a processing chamber, as a luminous intensity of a predetermined wavelength in an emission spectrum of a plasma generated from a processing gas in the chamber, a luminous intensity of the predetermined wavelength which starts to change when actual processing of the processing target film is started is measured. Then, a processing time of the predetermined processing performed after a moment when the measured luminous intensity of the predetermined wavelength is changed, is set.

Substrate processing method and substrate processing apparatus

A technique capable of removing a natural oxide film formed on a surface of a semiconductor layer which contains a compound of indium and an element other than indium as a main ingredient, without making a temperature of the semiconductor layer relatively high. The technique includes supplying a first etching gas which is &#x3b2;-diketone to the semiconductor layer and heating the semiconductor layer to remove an oxide of the indium constituting the natural oxide film; and supplying a second etching gas to the semiconductor layer and heating the semiconductor layer to remove an oxide of the element constituting the natural oxide film. By using the first etching gas, it is possible to remove the indium oxide even if the temperature of the semiconductor layer is relatively low. This eliminates the need to increase the temperature to a relatively high level when removing the natural oxide film.

Naturally oxidized film removing method and naturally oxidized film removing device

An etching method includes: disposing a target substrate which includes silicon and silicon-germanium in a chamber; supplying the chamber with processing gas which comprises Hgas and Ar gas in an excited state; and selectively etching the silicon with respect to the silicon-germanium by the processing gas which is in the excited state. Due to this configuration, silicon can be etched, with high selectivity, with respect to the silicon-germanium.

Etching method

An etching method includes a step of etching a cobalt film formed on a surface of a target object by supplying an etching gas containing &#x3b2;-diketone and an oxidizing gas for oxidizing the cobalt film to the target object. The supply of the etching gas and the oxidizing gas is carried out such that a flow rate ratio of the oxidizing gas to the etching gas is ranging from 0.5% to 50% while heating the target object to a temperature lower than or equal to 250&#xb0; C.

Etching method and etching apparatus

An etching method includes: disposing a target substrate including a silicon and a silicon-germanium within a chamber; and performing both of selectively etching the silicon-germanium with respect to the silicon and selectively etching the silicon with respect to the silicon-germanium by varying ratios of Fgas and NHgas in an etching gas that has a gas system including the Fgas and the NHgas.

Etching method and storage medium

A substrate processing apparatus which irradiates a substrate under processing with an electron beam and processes the substrate with the electron beam is disclosed. The substrate processing apparatus includes an electron beam generation mechanism which generates the electron beam, first area having a plurality of first static electricity deflecting devices whose thicknesses gradually increase in a traveling direction of the electron beam, and a second area disposed on a downstream side of the electron beam of the first area and having a plurality of second static electricity deflecting devices whose thicknesses are nearly same in the traveling direction of the electron beam. The substrate processing apparatus may further include a plurality of lenses whose thicknesses gradually decrease in the traveling direction of the electron beam, at least one of the plurality of lenses being disposed in each of the first area and the second area.

Static electricity deflecting device, electron beam irradiating apparatus, substrate processing apparatus, substrate processing method, and method of manufacturing substrate

Static electricity deflecting device, electron beam irradiating apparatus, substrate processing apparatus, substrate processing method and method of manufacturing substrate

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Yamanashi, Japan

Koji Takeya