Sumitomo Mitsubishi Silicon Corporation

Sumco Corporation

Koji Sueoka

Shinsuke Sadamitsu

Nobumitsu Takase

Makoto Ito

Takayuki Kihara

Hideshi Nishikawa

Masataka Horai

Hiroyuki Takao

A high-resistance silicon wafer is manufactured in which a gettering ability, mechanical strength, and economical efficiency are excellent and an oxygen thermal donor is effectively prevented from being generated in a heat treatment for forming a circuit, which is implemented on the side of a device maker. A heat treatment for forming an oxygen precipitate nucleus is performed at 500 to 900&#xb0; C. for 5 hours or more in a non-oxidizing atmosphere and a heat treatment for growing an oxygen precipitate is performed at 950 to 1050&#xb0; C. for 10 hours or more on a high-oxygen and carbon-doped high-resistance silicon wafer in which resistivity is 100 &#x3a9;cm or more, an oxygen concentration is 14&#xd7;10atoms/cm(ASTM F-121, 1979) or more and a carbon concentration is 0.5&#xd7;10atoms/cmor more. By these heat treatments, a remaining oxygen concentration in the wafer is controlled to be 12&#xd7;10atoms/cm(ASTM F-121, 1979) or less. Thus, there is provided a high-resistance, low-oxygen and high-strength silicon wafer in which resistivity is 100 &#x3a9;cm or more and an oxygen precipitate (BMD) having a size of 0.2 &#x3bc;m is formed so as to have high density of 1&#xd7;10/cmor more.

High resistance silicon wafer and its manufacturing method

A high-resistance silicon wafer is manufactured, in which a gettering ability and economical efficiency is excellent and an oxygen thermal donor is effectively prevented from being generated in a heat treatment for forming a circuit, which is to be implemented on the side of a device manufacturer. In order to implement the above, a high-temperature heat treatment at 1100&#xb0; C. or higher is performed on a carbon doped high-resistance and high-oxygen silicon wafer in which specific resistivity is 100 &#x3a9;cm or more and a carbon concentration is 5&#xd7;10to 5&#xd7;10atoms/cmso that a remaining oxygen concentration becomes 6.5&#xd7;10atoms/cmor more (Old-ASTM). As this high-temperature treatment, an OD treatment for forming a DZ layer on a wafer surface, a high-temperature annealing treatment for eliminating a COP on the surface layer, a high-temperature heat treatment for forming a BOX layer in a SIMOX wafer manufacturing process and the like can be used.

High-resistance silicon wafer and process for producing the same

In a conventional evaluation method of IG effectivity on Cu in semiconductor silicon substrates, it is required to actually conduct the device process, or a great deal of time, manpower and expenses for manufacturing a MOS device for dielectric breakdown estimation and the like are needed, but in the present invention, the problem was solved by experimentally finding in advance the optimum ranges of the diagonal length and density of oxygen precipitates which make the IG effectivity on Cu favorable, and conducting a heat treatment for the addition of IG effectivity based on a simulation by calculations using Fokker-Planck equations so that the diagonal length and density of plate-like precipitates fall within the optimum ranges.

Evaluation method of IG effectivity in semiconductor silicon substrates

Growing community of inventors

Tokyo, Japan

Koji Sueoka