Rohm Co., Ltd.

Murata Manufacturing Co., Ltd.

Screen Holdings Co., Ltd.

Seiko Epson Corporation

Koji Nishi

Toru Momma

Takaya Nagahata

Shigehiro Goto

Seiichi Takahashi

Atsushi Tanaka

Yukihiko Inagaki

Tadashi Miyagi

Yasuhiro Yoshikawa

Shinobu Obata

Yasuhiro Fukumoto

Takayoshi Nishiyama

Hitoshi Tsuji

Yasuo Ohashi

Takafumi Katsuno

Nobuhito Kinoshita

Masumi Okumura

Kenichiro Jo

Koji Kitamura

Tadahiko Matsumoto

Ryuichi Yoshida

Tokihiko Kishimoto

Koichi Wada

Yoshinobu Kishimoto

Tadashi Yamamoto

Takashi Kurokawa

Yoshihiro Matsumoto

Shigeyoshi Ono

Soichi Watanabe

Tatsuhisa Tsuji

Tomohiro Nishimura

Masanori Minamino

Hiroki Wachi

Masamichi Matsuo

A semiconductor device is adapted for controlling energization of a heating element that performs printing. The semiconductor device includes: a strobe signal input unit receiving a printing strobe signal that causes the heating element to generate heat for printing; a preheating strobe generation circuit generating a preheating strobe signal that causes the heating element to preheat by compressing a waveform of the printing strobe signal in a time axis direction; and an output controller outputting a control signal that controls energization of the heating element based on the printing strobe signal and the preheating strobe signal.

Semiconductor device

Disclosed is a substrate treating apparatus that performs a heat treatment to a substrate. The apparatus includes the following elements: a heat treating plate; a casing that produces a heat treatment atmosphere by the heat treating plate; a movable top board that is movable between a ceiling surface of the casing and the heat treating plate; and a controller that causes the movable top board to be moved to a raised position when the substrate is loaded/unloaded, and causes the movable top board to be moved to a lowered position when the substrate is placed on the heat treating plate for performing the heat treatment, thereby controlling the lowered position for every substrate.

Substrate treating apparatus

A treating liquid vaporizing apparatus includes a buffer tank for storing a treating liquid, a vaporizing container connected to the buffer tank for vaporizing the treating liquid, a further vaporizing container connected to the buffer tank in parallel with the vaporizing container for vaporizing the treating liquid, a switch valve for opening and closing a flow path of the treating liquid between the buffer tank and the vaporizing container, and a switch valve for opening and closing a flow path of the treating liquid between the buffer tank and the further vaporizing container.

Treating liquid vaporizing apparatus

An upper plate on which a substrate is placed is cooled or heated by a thermal processor. The temperature of the thermal processor is adjusted by a temperature adjuster. The temperature of the upper plate is detected. A control value that is to be applied to the temperature adjuster in order to maintain the temperature of the upper plate at a set value is calculated as a control arithmetic value on the basis of the detected temperature. When the control arithmetic value decreases to a value less than a second threshold value, a first control that applies the control arithmetic value to the temperature adjuster is performed. When the control arithmetic value increases to a value not less than a first threshold value, a second control that applies a control set value higher than the control arithmetic value to the temperature adjuster is performed.

Thermal processing apparatus and thermal processing method

With a cover member being located directly upward of an opening of a casing, a substrate in a horizontal attitude is carried into a gap between the cover member and the opening. The carried-in substrate is moved to the inside of the casing through the opening. The cover member is lowered, so that the opening is closed. An inert gas is supplied to the inside of the casing. One surface of the substrate is irradiated with vacuum ultraviolet rays by a light emitter while the substrate is moved in a horizontal direction in the casing. The cover member is lifted, so that the opening is opened. The substrate is moved to a position between the cover member and the opening from a position inside of the casing through the opening. Thereafter, the substrate in the horizontal attitude is taken out in the horizontal direction.

Exposure device and substrate processing apparatus

Substrate treating apparatus including a cover that covers a substrate on a plate. The cover undersurface is substantially horizontal and adjacent to a surface of the substrate. Through a gas flow path, a treatment gas is supplied to the substrate. The gas flow path includes a swirl chamber, a diameter contraction chamber, and a diameter expansion chamber. In the swirl chamber, the treatment gas flows around the central axis. The diameter contraction chamber is disposed below and in communication with the swirl chamber, and has an inner diameter that decreases from its upper end toward its lower end. The diameter expansion chamber is disposed below and in communication with the diameter contraction chamber, and has an inner diameter that increases from its upper end toward its lower end. The lower end of the diameter expansion chamber includes an opening on the undersurface of the cover.

Substrate treating apparatus and treatment gas supplying nozzle

A local transport hand is configured to be movable in a front-and-rear direction between a rear position rearward of a light emitter and a front position forward of the light emitter. A substrate on which a DSA film is formed is placed on an upper surface of the local transport hand. Vacuum ultraviolet rays having strip-shape cross sections are emitted from the light emitter to cross a moving path of the local transport hand. The local transport hand is moved from the front position to the rear position such that the DSA film on the substrate is irradiated with the vacuum ultraviolet rays emitted by the light emitter. At this time, a moving speed of the substrate is controlled, so that an exposure value for the DSA film formed on the substrate is adjusted.

Exposure device, substrate processing apparatus, exposure method for substrate and substrate processing method

A thermal print head includes a base member, an electrode layer formed on the base member, and a resistor layer formed on the base member. The electrode layer includes a common electrode and individual electrodes. The resistor layer includes heating units aligned in a main scanning direction. The heating units each include a first heating element and a second heating element spaced apart from each other. The first heating element and the second heating element are electrically connected to the common electrode and one of the individual electrodes to which the first heating element is electrically connected.

Thermal print head and thermal printer

The present invention provides a thermal print head and a thermal printer that can deliver improved printing quality. The thermal print head includes a main substrate with a main surface, heating elements arranged along a main scanning direction, and a protection layer that covers the heating elements. A belt-shaped heating glaze layer is between the main surface and the heating elements, extends along the main scanning direction, and bulges towards the direction where the main surface faces. The surface shape of the protection layer has an equivalent radius of curvature Re between 6200 &#x3bc;m and 15000 &#x3bc;m. The equivalent radius of curvature Re is calculated by Hq and Wq. Hq is &#xbc; of the maximum height Hm of the bulging portion of the protection layer including the heating glaze layer. Wq is the width of the bulging portion along a sub-scanning direction, measured at a height equal to Hm minus Hq.

According to the present disclosure, a manufacturing method of a fine wiring pattern is disclosed. The manufacturing method includes preparing a support member, forming a first layer on the support member by thick-film printing, and forming a second layer including Ag on the first layer by the thick-film printing. The method also includes forming a predetermined fine wiring pattern by performing an etching process upon the first layer and the second layer.

Fine wiring pattern, manufacturing method thereof, and thermal print head

Fine wiring pattern and composition, manufacturing method thereof, and thermal print head including fine wiring pattern

A thermal print head includes a substrate, a resistor layer supported on the substrate and provided with a plurality of heating portions arranged along a primary scanning direction, an electrode layer provided with a plurality of individual electrodes arranged along the primary scanning direction, a drive IC configured to selectively apply an electric current to the plurality of heating portions, and a plurality of wires connected to the plurality of individual electrodes and the drive IC, the plurality of individual electrodes including strip-shaped portions electrically connected to the heating portions and arranged along the primary scanning direction and pad portions greater in width in the primary scanning direction than the strip-shaped portions, the pad portions including bonding pads connected to each of the plurality of wires and probe contact pads, the probe contact pads being narrower in width in the primary scanning direction than bonding pads.

Thermal print head

A thermal printhead includes a substrate, a heating resistor formed on the substrate, a drive IC for controlling power application to the heating resistor, and a thermistor mounted on the substrate and including first and second terminals. The drive IC includes a print execution signal terminal for activation of the heating resistor upon application of a voltage higher than a threshold value. The first terminal of the thermistor is connected with the print execution signal terminal.

Thermal printhead

A thermal printhead (A) includes a substrate (), and a plurality of heating portions () aligned on the substrate in a primary scanning direction (X) . A plurality of electrodes () are connected to the heating portions (). Each of the heating portions () has a width in the primary scanning direction (X) which is smaller than that of each of the electrodes (). Each of the electrodes () includes a tapered portion (C,C,C) having a width which reduces as progressing toward a corresponding one of the heating portions

In a power supply apparatus, in a standby mode, control signals for controlling a first MOSFET of a power supply apparatus to be turned on and a second MOSFET to be turned off are supplied to the gates of the first and second MOSFETs from a control circuit, respectively. The emitter of a PNP transistor is connected to the gate of the second MOSFET through a diode of a switch circuit and the collector is connected to the ground. A power supply operation control signal is input to the base of the PNP transistor. When a power supply operation control signal in a Low state is input to the base in a standby mode, the emitter and the collector are connected to each other. Accordingly, the gate of the second MOSFET has a potential substantially the same as a ground potential and the second MOSFET is turned off irrespective of the control signal.

Growing community of inventors

Kyoto, Japan

Koji Nishi