Tokyo Electron Limited

Tokyo Electron Limi Ted

Koji Koyama

Naoki Matsumoto

Jun Yoshikawa

Yuki Kawada

Kazushi Kaneko

Takahiro Senda

Kazuki Takahashi

Ayako Ito

Shinji Kubota

Kiyotaka Ishibashi

Kazuki Moyama

Takashi Dokan

Masayuki Kohno

Takehiro Tanikawa

Yusuke Yoshida

Michitaka Aita

Hideo Kato

Caizhong Tian

Naoki Mihara

Kazunori Funazaki

Ryou Son

Masaki Inoue

Ippei Shimizu

Hiroyuki Kondo

Shohei Fukano

Yasutaka Sakai

Takashi Minakawa

Masami Sudayama

Yukiyoshi Aramaki

Takashi Hasegawa

A plasma processing apparatus includes a microwave output unit, a wave guide tube, a tuner, a demodulation unit, and a calculation unit. The microwave output unit outputs a microwave having power corresponding to setting power while frequency-modulating the microwave in a setting frequency range. The wave guide tube guides the microwave to an antenna of a chamber main body. The tuner is provided in the wave guide tube and adjusts a position of a movable plate. The demodulation unit is provided in the wave guide tube, and acquires travelling wave power and reflected wave power for each frequency. The calculation unit calculates a frequency at which a reflection coefficient, which is calculated on the basis of the travelling wave power and the reflected wave power, for each frequency becomes a minimum point as an absorption frequency.

Plasma processing apparatus

A plasma processing apparatus comprises a processing chamber, a gas supply unit, a power supply unit and a frequency control unit. The processing chamber accommodates a target object. The gas supply unit supplies a processing gas into the processing chamber. The power supply unit supplies a power of a predetermined frequency band into the processing chamber to generate plasma of the processing gas in the processing chamber. The frequency control unit sweeps a frequency of the power supplied into the processing chamber by the power supply unit from a first frequency to a second frequency at the time of generating the plasma of the processing gas in the processing chamber.

Plasma processing apparatus and plasma processing method

In one exemplary embodiment, a second waveguide is connected to an upper wall of a first waveguide and communicates with the first waveguide, a dielectric window is in contact with a lower wall of the first waveguide, a first inner conductor penetrates an upper wall, is electrically connected with the upper wall, and extends along the direction of a tube axis from an inside of the first waveguide to an inside of a third waveguide, the third waveguide is connected to the lower wall on the dielectric window side and communicates with the first waveguide, a first opening end of the third waveguide is connected to the dielectric window, and a drive device is connected to the first inner conductor, and is configured to drive the first inner conductor in the direction of the tube axis.

Antenna device, radiation method of electromagnetic waves, plasma processing apparatus, and plasma processing method

Detection accuracy of a power of a progressive wave and detection accuracy of a power of a reflection wave can be improved. In a plasma processing apparatus, a first directional coupler is provided in a first waveguide which is configured to connect a microwave generating unit and a first port of a circulator. A first detector is connected to the first directional coupler. A second port of the circulator is connected to a plasma generating unit via a second waveguide. Further, a second directional coupler is provided in a third waveguide which is configured to connect a third port of the circulator and a dummy load. A second detector is connected to the second directional coupler.

An antenna according to an aspect includes: a dielectric window having a first surface and a second surface, the second surface having an annular recessed surface and a flat surface surrounded by the recessed surface; a slot plate; a dielectric plate; a heat transfer member made of metal and having an upper surface and a lower surface opposing each other; a cooling jacket; and a heater, in which the upper surface includes a plurality of first regions and a second region, the cooling jacket is mounted on the plurality of first regions, the second region is recessed further toward the lower surface side than the plurality of first regions, the heater is mounted on the second region, and each of the plurality of first regions is provided at a position at least partially overlapping with the flat surface when viewed in a direction parallel to a central axis.

Antenna, plasma processing device and plasma processing method

In an antenna including a dielectric window and a slot plate provided on one surface of the dielectric window, in a case where a reference position g is a center position in a width direction of each slot S and a center position in a length direction in the slot plate, the reference position g of each slot is located on a virtual circle centered on a center of gravity G, and line segments connecting the reference positions g of the slots S and virtual point Gto which the slots belong are located radially from a virtual point G, angles (&#x3b2;to &#x3b2;) between adjacent line segments are equal to each other, and angles (&#x3b8;to &#x3b8;) formed by the length directions of the slots S at the reference positions g and the line segments to which the slots belong are equal to each other.

Antenna and plasma processing apparatus

A plasma processing apparatus includes a processing vessel; a carrier wave group generating unit configured to generate a carrier wave group including multiple carrier waves having different frequencies belonging to a preset frequency band centered on a predetermined center frequency; a plasma generating unit configured to generate plasma by using the carrier wave group; a spectrum detecting unit configured to detect a progressive wave spectrum and a reflection wave spectrum of the carrier wave group; and a control unit configured to calculate, by using the progressive wave spectrum and the reflection wave spectrum, an absorption power which is a power of the carrier wave group absorbed into the plasma, and configured to adjust a parameter, which varies a minimum value of the reflection wave spectrum and a frequency corresponding to the minimum value, such that the absorption power becomes equal to or larger than a threshold value.

An antenna device according to an exemplary embodiment radiates electromagnetic waves. In the antenna device, a dielectric window is in contact with a lower wall of a first waveguide, the first waveguide is provided between the dielectric window and a second waveguide and extends in a direction crossing a tube axis of the second waveguide, a dispersion part in the first waveguide disperses the electromagnetic waves in the first waveguide, two inner conductors disposed at different distances from the tube axis and connected to the dielectric window include coaxial conversion parts which cause propagation of the electromagnetic waves dispersed by the dispersion part to direct to the dielectric window side, a body length of the inner conductor most distant from the tube axis, out of body lengths of the two inner conductors, is longer, and a front surface of the dielectric window does not have irregularities.

Antenna device and plasma processing apparatus

A plasma processing apparatus is provided that is configured to supply a gas into a chamber, generate a plasma from the gas using a power of an electromagnetic wave, and perform a predetermined plasma process on a substrate that is held by a mounting table. The plasma processing apparatus includes a dielectric window through which the electromagnetic wave that is output from an electromagnetic wave generator is propagated and transmitted into the chamber, a support member that supports the dielectric window, a partition member that separates a space where the support member is arranged from a plasma generation space and includes a protrusion abutting against the dielectric window, and a conductive member that is arranged between the partition member and the dielectric window and is protected from being exposed to the plasma generation space by the protrusion.

An antenna includes a dielectric window and a slot plate provided at one surface of the dielectric window. The slot plate includes a plurality of slot pairs each being formed of two slots. The slot pairs are concentrically disposed about a centroid position of the slot plate and provided at positions where straight lines extending from the centroid position of the slot plate and passing through each slot pair are not overlapped with each other.

A plasma processing apparatus includes a plasma generating device configured to generate a plasma within a processing vessel by using a high frequency wave generated by a microwave generatorincluding a magnetronconfigured to generate the high frequency wave; detectorsandconfigured to measure a power of a traveling wave that propagates to a load side and a power of a reflected wave reflected from the load side, respectively; and a voltage control circuitconfigured to control a voltage supplied to the magnetronby a power supply. Further, the voltage control circuitincludes a load control device configured to supply, to the magnetron, a voltage corresponding to a power calculated by adding a power calculated based on the power of the reflected wave measured by the detectorto the power of the traveling wave measured by the detector

Plasma processing apparatus, plasma processing method and high frequency generator

A dielectric window for a plasma treatment device for a plasma treatment device that uses microwaves as a plasma source. The dielectric window is circular-plate-shaped and allows microwaves to propagate. The dielectric window has a recess that has an opening on the lower-surface side and that indents in the plate thickness direction of the dielectric window, and is provided to the lower surface at which plasma is generated when the dielectric window is provided to the plasma treatment device. The recess has a bottom surface extending in the direction perpendicular to the plate thickness direction, and a side surface extending in the plate thickness direction from the circumferential edge of the bottom surface toward the opening of the recess. In addition, an inclined surface extends at an incline relative to the plate thickness direction from the opening-side circumferential edge of the side surface toward the opening of the recess.

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Miyagi, Japan

Koji Koyama