Tokyo Electron Limited

Koji Homma

Mitsuhiro Yuasa

Hiroshi Shinriki

Keiichi Enjoji

A wafer supporting unit () includes a base () and a thermally conductive member (). The base is formed by nickel material. The thermally conductive member is formed in the shape of a lamina, includes silicone rubber () serving as the main material, and Ag fine powder () is blended with the silicone rubber. The Ag fine powder is blended with high density in part of the thermally conductive member, and a plurality of pillar-shaped regions () is formed with one end facing the bottom, and with the other end facing the top. The wafer supporting unit does not produce curvature in a wafer, and provides efficient cooling of the wafer, and does not cause heat degradation in a thermally conductive member prepared on the rear side of the wafer during processing.

Wafer supporter

A substrate processing apparatus consists of: a processing container; a first processing gas supply unit and a second processing gas supply unit, countering each other, prepared on both sides of a substrate-to-be-processed to the processing container; and a first slit-shaped exhaust opening and a second slit-shaped exhaust opening provided one on each side of the substrate-to-be-processed approximately perpendicular to the flow of the first processing gas and the second processing gas, countering the first processing gas supply unit and the second processing gas supply unit, respectively. The first processing gas is passed along the surface of the substrate-to-be-processed from the first processing gas supply unit to the first exhaust opening, and is adsorbed by the surface of the substrate-to-be-processed. Then, the second processing gas is passed along the surface of the substrate-to-be-processed from the second processing gas supply unit to the second exhaust opening, the second processing gas reacts with molecules of the first processing gas previously adsorbed, and a high dielectric film of a single-molecule layer is formed.

Device and method for processing substrate

A plasma processing apparatus processing a surface of a substrate by spraying a process gas in a plasma state from a gas spray opening of a spray nozzle onto the substrate includes: an exhaust opening for exhausting residual gas generated at the time of processing the surface of the substrate, the exhaust opening being provided at a position close to the periphery of the gas spray opening; and an air jet opening generating airflow, the air jet opening being provided surrounding the exhaust opening so as to prevent the residual gas from flowing out.

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Tokyo, Japan

Koji Homma