Tokyo Electron Limited

Tokyo Electron Saga Limited

Koji Harada

Jun Ookura

Hiroshi Tanaka

Noriyuki Anai

Takami Satoh

Takayuki Tomoeda

Hirofumi Shiraishi

Shinya Murakami

Sinichiro Izumi

Yuuji Kamikawa

Ryoichi Uemura

Masami Akimoto

Yuji Kamikawa

Issei Ueda

Yoshio Kimura

Masatoshi Kaneda

Norio Semba

Yasuhiro Sakamoto

Yasunori Kawakami

Hisakazu Nakayama

Junichi Nagata

Fumihiko Kawano

Nobuyuki Jinnai

Process gas supply/stop operations are intermittently performed. As the hydrophobic process progresses, the temperature of a gas contract portion of a wafer lowers. While the hydrophobic process stops, the temperature of the gas contact portion of the wafer rises to the original temperature. Thereafter, the hydrophobic process resumes. Thus, while the temperature of the gas contact portion of wafer is suppressed from largely lowering, the hydrophobic process can be performed. Thus, non-uniformity of the hydrophobic process on the front surface of the wafer is reduced.

Substrate processing method

A substrate cooling unit comprises a cooling plate on which the substrate is placed, a cooling temperature adjusting element which adjusts the cooling plate to a predetermined temperature, a temperature controller which controls a temperature of the cooling temperature adjusting element according to a transfer function, a temperature sensor attached to the cooling plate, and a control parameter changing section which changes at least any one setting of a proportional operation coefficient, integral time or derivative time among control parameters in the transfer function based on a temperature of the cooling plate detected by the temperature sensor after the substrate that is an object to be cooled is placed on the cooling plate.

Heat treatment unit, cooling unit and cooling treatment method

The temperature of a hot plate is not more than a predetermined threshold when a wafer is accurately mounted at a substrate mounting position on the hot plate, whereas the temperature of the hot plate is the predetermined threshold when the wafer is not accurately mounted at the substrate mounting position on the hot plate. Therefore, when the temperature of the hot plate is not less than the predetermined threshold when the wafer is mounted on the hot plate, it is judged that the wafer is stranded on a guide, and an alarm is given by means of a speaker or a display section.

Processing apparatus, processing system, distinguishing method, and detecting method

Target processing temperatures for a wafer and offset values are tabulated and stored in a temperature controller in advance. When a target processing temperature is changed, a hot plate temperature corresponding to the target processing temperature for the wafer is calculated based on the offset value in the table. Based on the calculated value, a heater controller controls a heater to change the hot plate temperature. Thereby, in a substrate heat processing apparatus for performing heat processing at different temperatures, an offset value corresponding to each temperature is automatically changed, whereby the substrate can be heated at an appropriate temperature.

Substrate processing apparatus and substrate processing method

In this impurity eliminating apparatus, a mounting stand on which a wafer is mounted and a casing which confronts the mounting stand are provided in a container. A lower face of the casing consists of quartz glass. Inside the casing, an irradiating body for irradiating ultraviolet rays toward the wafer on the mounting stand is provided. The casing is full of inactive gas atmosphere supplied from an inactive gas supply pipe. The atmosphere above the wafer is exhausted from one side by an exhauster. Following the treatment by the impurity eliminating apparatus with the above structure, coating treatment with a treatment solution for forming a SOG film is performed. Thus, organic substances on the surface of the wafer is eliminated to form the SOG film.

Apparatus for eliminating impurities by ozone generated in space above substrate surface and film forming method and system therewith

The present invention is an apparatus for performing heat and cooling treatments for a substrate includes: a heating table for mounting the substrate thereon to perform the heat treatment for the substrate; a cooling table for mounting the substrate thereon to perform the cooling treatment for the substrate; a waiting table for allowing the substrate to wait; a carrying mechanism for carrying the substrate between the heating table, the cooling table, and the waiting table; and airflow formation means for forming airflow in a space in which the heating table, the cooling table, and the waiting table are arranged.

Heat and cooling treatment apparatus and substrate processing system

Substrate processing method and substrate processing unit

A gas supplied from a gas source is exposed to an atmosphere above a liquid surface in a tank saving the liquid and thereafter is supplied around a wafer in a treatment chamber through a gas supply passage and a supply port. The gas supplied around the wafer uniformly flows from around the wafer toward above the center of the wafer and thereafter is discharged from an exhaust port which is formed at the top of the treatment chamber. Meanwhile, with respect to the wafer, heat treatment is performed by a heating mechanism and a predetermined PEB is carried out. The humidified gas is supplied into the treatment chamber, thereby preventing drying in the treatment chamber. Therefore, water in resist is not taken out, resulting in that a required resist pattern can be formed on the wafer.

Treatment apparatus and treatment method

In this processing solution supplying apparatus, when restarting the hydrophobic process, the air in the supply pipe is exhausted outside before performing the hydrophobic process by using a transfer gas, bypassing the process chamber. Thus, a large-sized mist of HMDS staying inside the supply pipe is not supplied to the wafer as it is, and after restarting the hydrophobic process after a prolonged stoppage of the adhesion apparatus, the vapor or mist of HMDS can be supplied uniformly to the wafer.

Processing solution supplying apparatus, processing apparatus and processing method

In this impurity eliminating apparatus, a mounting stand on which a wafer is mounted and a casing which confronts the mounting stand are provided in a container. A lower face of the casing consists of. quartz glass. Inside the casing, an irradiating body for irradiating ultraviolet rays toward the wafer on the mounting stand is provided. The casing is full of inactive gas atmosphere supplied from an inactive gas supply pipe. The atmosphere above the wafer is exhausted from one side by an exhauster. Following the treatment by the impurity eliminating apparatus with the above structure, coating treatment with a treatment solution for forming a SOG film is performed. Thus, organic substances on the surface of the wafer is eliminated to form the SOG film.

Disclosed is an adhesion apparatus for modifying a surface of a substrate with an adhesion promoter so as to improve the adhesive force of a solution coated on the substrate surface in a photolithography process, comprising a support for holding the substrate, the support having a first contact face, a vacuum suction port formed in the support in a manner to surround the substrate held on the support, a lid having a second contact face which can be brought into contact with the first contact face, a processing space being formed between the table and the lid when the second contact face of the lid is brought contact with the first contact face of the support, unit for supplying an adhesion promoter into the processing space, a first annular sealing member positioned intermediate between the first and second contact faces and outside the vacuum suction port so as to surround the processing space, and a second annular sealing member positioned intermediate between the first and second contact faces and inside the vacuum suction port so as to surround the processing space.

Adhesion apparatus

Disclosed herein is a washing apparatus comprising a washing chamber, an opening/closing mechanism, and a nozzle. The chamber has an opening and is designed for washing the objects transported from outside through the opening. The opening/closing mechanism is designed to open and close the opening of the washing chamber. The nozzle is used to wash the opening/closing mechanism. The apparatus further comprises a washing vessel filled with a washing liquid, for washing the objects, and also a nozzle for applying a washing liquid to the objects located in the washing vessel when the objects are partly exposed as the washing liquid is discharged from the washing vessel.

Washing apparatus, and washing method

A washing method for washing objects includes the steps of supplying a washing liquid to a washing vessel and immersing objects in the washing liquid contained in the washing vessel. The method also includes the steps of discharging the liquid at least once from the washing vessel, and starting to apply the washing liquid to the objects when the objects are partly exposed to air as the liquid is discharged from the washing vessel. The washing liquid application is continued during exposure of the objects to the air to prevent the surface of the objects from being dried and stained.

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Kumamoto-ken, Japan

Koji Harada