Semiconductor Energy Laboratory Co., Ltd.

Panasonic Corporation

Canon Kabushiki Kaisha

Matsushita Electric Industrial Co., Ltd.

Other

Panasonic Intellectual Property Management Co., Ltd.

Sharp Kabushiki Kaisha Corporation

Socionext Inc.

Ishikawajima-harima Heavy Industries Co., Ltd.

Koichiro Tanaka

Shunpei Yamazaki

Hidekazu Miyairi

Akihisa Shimomura

Naoto Kusumoto

Mai Akiba

Atsuo Isobe

Yoshiaki Yamamoto

Aiko Shiga

Chiho Kokubo

Tomoaki Moriwaka

Koji Dairiki

Hirotada Oishi

Hisashi Ohtani

Masaaki Hiroki

Tatsuya Arao

Satoshi Teramoto

Hiroshi Shibata

Kenji Kasahara

Hideto Ohnuma

Masahiko Hayakawa

Naganori Shirakata

Hiroki Yonezawa

Takatsugu Omata

Hideki Nakahara

Hironobu Shoji

Ritsuko Kawasaki

Hisao Ikeda

Tomohiro Kimura

Akihiro Katayama

Toshiji Hamatani

Hitoshi Takai

Kenji Miyanaga

Yoshio Urabe

Naoaki Yamaguchi

Mitsuru Tanabe

Yasuo Harada

Yasuyuki Arai

Osamu Nakamura

Noriaki Saito

Takahiro Ibe

Satoshi Seo

Junya Maruyama

Satoshi Murakami

Kenichi Mori

Hiroyuki Motozuka

Kohei Yokoyama

Takahiro Oshino

Koji Imamura

Hongyong Zhang

Setsuo Nakajima

Yasuo Nakamura

Takuya Tsurume

Masafumi Morisue

Akihiro Tatsuta

Norihito Kawaguchi

Naoya Yosoku

Toru Takayama

Kengo Akimoto

Hideaki Kuwabara

Tsutomu Mukai

Tamae Takano

Hiroyuki Yamamoto

Yumiko Ohno

Takenori Sakamoto

Yusuke Nishido

Hiroshi Hayashino

Masaki Koyama

Atsushi Yoshinouchi

Hideyuki Tamura

Hidetoshi Yamasaki

Masashi Kobayashi

Tomoko Tamura

Shinya Urisaka

Miyuki Masaki

Susumu Okazaki

Akihiko Shiotsuki

Yasuhiko Takemura

Hiroaki Sato

Junpei Momo

Satoru Okamoto

Tetsuya Sato

Tomoaki Kawai

Ikuko Kawamata

Satoshi Watanabe

Naoki Makita

Yukie Suzuki

Shinichiro Ohmi

Shuhei Tsuchimoto

Makoto Funabiki

Fumito Isaka

Hiroshi Satomi

Hiroyuki Yoshikawa

Sho Kato

Yosato Hitaka

Taiji Akizuki

Shigeyuki Mitani

Masahiko Nagoshi

Jiro Nishida

Wataru Noguchi

The present invention is characterized in that by laser beam being slantly incident to the convex lens, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the present invention has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.

Laser irradiation method and laser irradiation device and method of manufacturing semiconductor device

A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

Semiconductor device and semiconductor device production system

If an optical path length of an optical system is reduced and a length of a laser light on an irradiation surface is increased, there occurs curvature of field which is a phenomenon that a convergent position deviates depending on an incident angle or incident position of a laser light with respect to a lens. To avoid this phenomenon, an optical element having a negative power such as a concave lens or a concave cylindrical lens is inserted to regulate the optical path length of the laser light and a convergent position is made coincident with a irradiation surface to form an image on the irradiation surface.

Method of laser irradiation, laser irradiation apparatus, and method of manufacturing a semiconductor device

The present invention is to provide a laser irradiation technique for irradiating the irradiation surface with the laser beam having homogeneous intensity distribution using a cylindrical lens array without being affected by the intensity distribution of the original beam. A laser beam emitted from a laser oscillator is divided by two kinds of cylindrical lens arrays into a plurality of beams, which are two kinds of linear laser beams with their energy intensity distribution inverted each other, and the two kinds of linear laser beams are superposed in a minor-axis direction. This can form the linear laser beam having homogeneous intensity distribution on the irradiation surface.

Laser irradiation method and laser irradiation apparatus

A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formulation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

An AGC circuit for a radio receiver includes a detector converting a high frequency signal into a baseband signal. To reduce generation of a DC offset, the AGC circuit includes: a variable gain amplifier having an amplifier circuit and a high-pass filter, the amplifier circuit amplifying the baseband signal with a variable gain and the high-pass filter coupled to the amplifier circuit and having a cut-off frequency which is variable; a controller supplying a gain control signal; and a blocker temporarily blocking the high frequency signal. Using the block control signal, the controller causes the blocker to start blocking the high frequency signal, before the cut-off frequency of the high-pass filter is switched from high to low.

AGC circuit and radio receiver

A highly reliable light-emitting device which includes an organic EL element and is lightweight is provided. The light-emitting device includes a first organic resin layer; a first glass layer over the first organic resin layer; a light-emitting element over the first glass layer; a second glass layer over the light-emitting element; and a second organic resin layer over the second glass layer. The first organic resin layer and the first glass layer each have a property of transmitting visible light. The thickness of the first glass layer and the thickness of the second glass layer are independently greater than or equal to 25 &#x3bc;m and less than or equal to 100 &#x3bc;m. The light-emitting element includes a first electrode having a property of transmitting visible light, a layer containing a light-emitting organic compound, and a second electrode stacked in this order from the first glass layer side.

Light-emitting device and lighting device

An optical element comprises an organic resin and bubbles distributed to have a number density increasing from a first plane of the optical element toward a second plane of the optical element, where a diameter of the bubbles is less than or equal to a wavelength of light which enters the optical element. At least one of the first plane and the second plane may have an uneven structure.

Optical element, light-emitting device, lighting device, and method for manufacturing optical element

A method of manufacturing a semiconductor device includes modifying a first laser beam from a first laser to form a first linear-shaped laser beam and modifying a second laser beam from a second laser to form a second linear-shaped laser beam. The method further includes overlaying the first linear-shaped laser beam and the second linear-shaped laser beam to form an overlayed linear-shaped laser beam, wherein the overlayed linear-shaped laser beam has a width and a length where the length is ten times or more as large as the width. The method also includes scanning a semiconductor film formed over a substrate with the overlayed linear-shaped laser beam to increase crystallinity of the semiconductor film, and patterning the semiconductor film to form a semiconductor layer which includes a channel formation region of a transistor.

In a phase error corrector, a signal extractor extracts received reference signals from received signals, and an error vector calculator calculates the error vectors of phase errors by comparing the extracted received reference signals with a known reference signal that is to be transmitted. A representative vector calculator divides, according to frequency, the error vectors into two or more groups and calculates representative vectors for the respective groups. A correction value calculator calculates, on the basis of the representative vectors, phase correction values for the respective frequencies. A phase corrector uses the calculated phase correction values to correct the phase errors for the respective frequencies.

Reception apparatus, phase error estimation method, and phase error correction method

Growing community of inventors

Kanagawa, Japan

Koichiro Tanaka