Tokyo Electron Limited

Imec Vzw

Tokyo Electron Limi Ted

Université D'orleans

Koichi Yatsuda

Tatsuya Yamaguchi

Takashi Hayakawa

Eiichi Nishimura

Mitsuaki Iwashita

Takashi Tanaka

Yuichiro Inatomi

Hiroshi Okuno

Reiji Niino

Nobutaka Mizutani

Hiroyuki Hashimoto

Shin Okamoto

Yannick Feurprier

Frederic Lazzarino

Kazutoshi Iwai

Hiromasa Mochiki

Jean-Francois De Marneffe

Takeshi Nagao

Khashayar Babaei Gavan

Shigeru Tahara

Jacques Faguet

Junichi Arami

Kaoru Maekawa

Mitsuaki Komino

Yoshinobu Ooya

Kouichiro Inazawa

Kumiko Ono

Nagisa Sato

Remi Dussart

Thomas Tillocher

Philippe Lefaucheux

Gaëlle Antoun

Tetsuya Nishiara

A method for manufacturing a semiconductor device includes: a first insulating film forming step of forming a first insulating film in a transistor having a structure in which a source and a drain raised in a fin shape are covered with a gate; a sacrifice film forming step of forming a sacrifice film; a hard mask pattern forming step of forming a hard mask film having a desired pattern; a first opening forming step of forming a first opening; a second insulating film forming step of forming a second insulating film made of a material different from the first insulating film, in the first opening; a second opening forming step of forming a second opening by removing the sacrifice film, after the second insulating film forming step; and a contact plug forming step of forming a contact plug in the second opening.

Method for manufacturing semiconductor device

A semiconductor device manufacturing method of forming a trench and a via in a porous low dielectric constant film formed on a substrate as an interlayer insulating film, includes: embedding a polymer having a urea bond in pores of the porous low dielectric constant film by supplying a raw material for polymerization to the porous low dielectric constant film; forming the via by etching the porous low dielectric constant film; subsequently, embedding a protective filling material made of an organic substance in the via; subsequently, forming the trench by etching the porous low dielectric constant film; subsequently, removing the protective filling material; and after the forming a trench, removing the polymer from the pores of the porous low dielectric constant film by heating the substrate to depolymerize the polymer, wherein the embedding a polymer having a urea bond in pores is performed before the forming a trench.

Semiconductor device manufacturing method

A method includes a step of performing a selective catalyst treatment by supplying a catalyst solution to an upper surface of an exposed interconnection layer forming a step portion of a stepped shape formed by pair layers stacked to form the stepped shape, the pair layer including an interconnection layer formed on an insulating layer, and a step of selectively growing a metal layer by performing electroless plating on the upper surface of the interconnection layer on which the catalyst treatment is performed.

Method for manufacturing a contact pad, method for manufacturing a semiconductor device using same, and semiconductor device

A plasma etching method includes a physisorption step for causing an adsorbate that is based on first processing gas to be physisorbed onto a film to be etched, while cooling an object to be processed on which the film to be etched is provided; and an etching step for etching the film to be etched by causing the adsorbate to react with the film to be etched, using the plasma of second processing gas.

Plasma etching method

There is provided a method of fabricating a semiconductor device by performing a process on a substrate, which includes: forming a masking film made of a polymer having a urea bond by supplying polymerizing raw materials to a surface of the substrate on which an etching target film formed; forming an etching pattern on the masking film; subsequently, etching the etching target film with a processing gas using the etching pattern; and subsequently, removing the masking film by heating the substrate to depolymerize the polymer.

Method of fabricating semiconductor device, vacuum processing apparatus and substrate processing apparatus

A catalyst is imparted selectively to a plateable material portionby performing a catalyst imparting processing on a substrate W having a non-plateable material portionand the plateable material portionformed on a surface thereof. Then, a hard mask layeris formed selectively on the plateable material portionby performing a plating processing on the substrate W. The non-plateable material portionis made of SiOas a main component, and the plateable material portionis made of a material including, as a main component, a material containing at least one of a OCHgroup and a NHgroup, a metal material containing Si as a main component, a material containing carbon as a main component or a catalyst metal material.

Forming method of hard mask

Method of forming FinFET source/drain contact

There is provided a method of manufacturing a semiconductor device, which includes: supplying a raw material for polymerization to a porous low dielectric constant film formed on a substrate for manufacturing a semiconductor device, and filling holes formed in the porous low dielectric constant film with a polymer having a urea bond; subsequently, forming a pattern mask for etching on a surface of the porous low dielectric constant film; subsequently, etching the porous low dielectric constant film; subsequently, removing the pattern mask; and heating the substrate to depolymerize the polymer.

Method of manufacturing semiconductor device

Forming method of hard mask, forming apparatus of hard mask and recording medium

There is provided a substrate processing method capable of preventing the decrease in etching efficiency by positive ions and increasing the overall etching efficiency by using negative ions. The substrate processing method includes applying a plasma RF and a bias RF in the pattern of a pulse wave, respectively. The substrate processing method repeatedly performs the steps of: () etching a substrate by positive ions in plasma by applying both the plasma RF and the bias RF; () generating negative ions in a processing chamber by stopping the application of both the plasma RF and the bias RF; and () attracting the negative ions to the substrate by applying the bias RF and stopping the application of the plasma RF. A duty ratio of the bias RF is set to be greater than a duty ratio of the plasma RF.

Substrate processing method

A plasma etching method for forming a hole in an etching target film by a plasma processing apparatus is provided. The apparatus includes an RF power supply for applying RF power for plasma generation to at least one of upper and lower electrodes, and a DC power supply for applying minus DC voltage to the upper electrode. A first condition that plasma is generated by turning on the RF power supply and minus DC voltage is applied to the upper electrode and a second condition that the plasma is extinguished by turning off the RF power supply and minus DC voltage is applied to the upper electrode are alternately repeated. Etching is performed by positive ions in the plasma under the first condition and negative ions are supplied into the hole by the DC voltage to neutralize positive ions in the hole under the second condition.

Plasma etching apparatus, plasma etching method and storage medium

A feedforward control is performed so that a line width of a mask constituted by an SiNlayerformed by using a photoresistas a mask is to be the same as a line width of a mask pattern constituted by an SiOlayerbased on a measured line width of the photoresistand the measured line width of the mask pattern constituted by the SiOlayer. For example, a control of a trimming amount of the line width of the photoresistis performed so that the line width of the photoresistis to be the same as the line width of the mask pattern constituted by the SiOlayer

Forming method of etching mask, control program and program storage medium

A substrate processing method capable of selectively removing a nitride film. Oxygen plasma containing plasmarized oxygen gas is made to be in contact with a silicon nitride film, which is made of SiN, of a wafer to thereby cause the silicon nitride film to be changed to a silicon monoxide film. The silicon monoxide film is selectively etched by hydrofluoric acid generated from HF gas supplied toward the silicon monoxide film.

Substrate processing method and substrate processing apparatus

Growing community of inventors

Tokyo, Japan

Koichi Yatsuda