Japan Energy Corporation

Nikko Kyodo Co., Ltd.

Koichi Yasui

Junichi Anan

Osamu Kano

Yasuhiro Yamakoshi

Tateo Ohhashi

Hideaki Fukuyo

Hironori Wada

Takakazu Seki

Akio Yasuoka

Yasuyuki Sato

Takeo Okabe

Metal silicide targets are provided for sputtering which have a density of at least 99%, no more than one coarse silicon phase 10 .mu.m or larger in size that appears, per square millimeter, on the sputter surface, and an oxygen content of at most 150 ppm. They are made by a method which comprises finely grinding a synthesized silicide powder, vacuum annealing the finely ground powder in a hot press die without the application of pressure, and thereafter compacting and sintering the compact to a density of at least 99% by hot pressing. Alternatively, the finely ground powder is vacuum annealed as a presintered body at a density ratio of 50 to 75%, and thereafter is compacted and sintered.

Silicide targets for sputtering

Silicide targets for sputtering which have an area ratio of silicon phases that appear on the sputter surface of no more than 23%, and a density of at least 99%, with a deformed layer partly removed from the surface to attain a surface roughness of from more than 0.05 .mu.m to 1 .mu.m, preferably with the number of coarse silicon phases at least 10 .mu.m in diameter that appear on the sputter surface being at most 10/mm.sup.2. The reduction of early-stage particle generation, in turn, reduces secondary particle generation, thus realizing the reduction of particle generation at both early stage and stabilized stage. A Si powder having a maximum particle diameter of no more than 20 .mu.m is mixed with a metal powder having a maximum particle diameter of no more than 60 .mu.m, in a rather Si-lower mixing ratio. A silicide powder is synthesized from the mixture and hot pressed, the sintered compact being machined and surface treated for the removal of the deformed layer. The burden of the deformed layer-removal step on the process is light.

Silicide targets for sputtering and method of manufacturing the same

A method of manufacturing metal silicide targets or alloy targets for sputtering use comprises the steps of (a) mechanically alloying silicon and a metal to provide a metal silicide powder or mechanically alloying silicon and a plurality of metal powders to provide an alloy powder, (b) and then pressing the metal silicide powder or alloy powder. The invention also relates to the metal silicide targets or alloy targets so manufactured. In the mechanical alloying step, rapid and fine division and agglomeration of the mixed powder is repeated until the particles of the material powders are finely divided to a submicron level. They form aggregates tens of microns in diameter. The aggregates gradually take an equi-axed shape. Homogenization of the material powder mixture progresses to mixing on the atomic level, until alloying takes place.

Sputtering target

Growing community of inventors

Kitaibaraki, Japan

Koichi Yasui