Rohm Co., Ltd.

Koichi Kudo

Yasuo Aki

Yuji Okamura

Hiroshi Kadonishi

A photodiode array includes an insulating film; a semiconductor layer of a first conductivity type provided on the insulating film; a positive electrode and negative electrode formed on the semiconductor layer; and a plurality of pn junctions formed in series in the semiconductor layer between the positive and negative electrodes. The pn junctions are formed by a diffusion layer of a second conductivity type formed in the semiconductor layer and another diffusion layer of the first conductivity type formed in the diffusion layer, so as to terminate on the insulating film.

Photodiode array and method for manufacturing the same

A photodiode array is provided which includes a cell comprised of at least a substrate, an insulating film formed on the substrate, a semiconductor layer containing an impurity of first conductivity type and provided on the insulating film, an impurity-diffusion layer of second conductivity type formed in the semiconductor layer and reaching the insulating film, and at least one impurity-diffusion layer of the first conductivity type formed within the impurity-diffusion layer of the second conductivity type and reaching the insulating film, wherein pn junctions are defined between the layers of opposite conductivity types and arranged laterally, and of the pn junctions, any pn junction of a predetermined order are connected to each other in series. By virtue of this arrangement, the area of pn junctions per unit area of a substrate is increased thereby contributing to a reduction in chip size and in production cost.

An acceleration detecting method and an acceleration sensor are disclosed. An inverted potential distribution structure of a metal-insulator-semiconductor type is formed on a semiconductor substrate. The deflection of the weight fixed above the semiconductor substrate with a predetermined space therebetween is detected by the output of the inverted potential distribution structure of a metal-insulator-semiconductor type. The inverted potential distribution structure of a metal-insulator-semiconductor type is turned on when the weight or the electrode on the surface thereof comes close to or comes into contact with the insulation film or the electrode on the semiconductor substrate. The capacitance of the inverted potential distribution structure of a metal-insulator-semiconductor type changes with the deflection of the weight.

Acceleration sensor

Field-effect voltage regulator diode

The improved photodiode array has a structure that has pn-junctions arranged in a row on a semiconductor substrate 1 having an oxide film 2. The photodiode array has such a surface pattern that n-type impurity diffused layers 3 and p-type impurity diffused layers 4 are arranged in a generally concentric manner or with layers of one diffusion type alternating with layers of the other diffusion type. The improved process of fabrication comprises joining the oxide film 2 on the semiconductor substrate 1 to an n-type semiconductor layer 3 and then diffusing a p-type impurity within the n-type semiconductor layer 3 to form pn-junctions, thereby yielding a photodiode array. Thereby, it is provided a photodiode array that has such a simple structure that not only is the yield of device fabrication improved but also the cost of the final product is reduced.

Photodiode array device and method for producing same

The improved photodiode array has a structure that has pn-junctions arranged in a row on a semiconductor substrate 1 having an oxide film 2. The photodiode array has such a surface pattern that n-type impurity diffused layers 3 and p-type impurity diffused layers 4 are arranged in a generally concentric manner or with layers of one diffusion type alternating with layers of the other diffusion type. The improved process of fabrication comprises joining the oxide film 2 on the semiconductor substrate 1 to an n-type semiconductor layer 3 and then diffusing a p-type impurity within the n-type semiconductor layer 3 to form pn-junctions, thereby yielding a photodiode array. Thereby, it is provided a photodiode array that has such a simple structure that not only is he yield of device fabrication improved but also the cost of the final product is reduced.

A method for producing a semiconductor device, is composed of steps of: covering a lower side of a semiconductor wafer with a heavy metal and disposing the semiconductor wafer in a chamber; causing the heavy metal to diffuse into the semiconductor wafer by heating the semiconductor wafer with a heat source having a small thermal capacity; and thereafter, ceasing to heat with the heat source, then charging the chamber with a cooling gas.

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Kyoto, Japan

Koichi Kudo