Fujimi Incorporated

Toagosei Company, Ltd.

Kohsuke Tsuchiya

Hisanori Tansho

Shuhei Takahashi

Yoshio Mori

Taiki Ichitsubo

Maki Asada

Yusuke Suga

Naohiko Saito

Shinichiro Takami

Michihiro Kaai

Satoshi Momota

Takayuki Takemoto

Hitoshi Morinaga

Tomohiro Imao

Megumi Taniguchi

Noboru Yasufuku

Takatoshi Mukai

Provided is a polishing composition which contains a water-soluble polymer and is suitable for reducing LPDs. The polishing composition provided in this application includes an abrasive, a water-soluble polymer, and a basic compound. In the polishing composition, the content of a reaction product of a polymerization initiator and a polymerization inhibitor is 0.1 ppb or less of the polishing composition on a weight basis.

Polishing composition and method for producing same

The present invention provides means capable of achieving both a reduction in the number of defects and a reduction in haze in an object to be polished after polishing at a high level in a method of polishing the object to be polished containing a material having a silicon-silicon bond. The present invention relates to a method of polishing an object to be polished containing a material having a silicon-silicon bond, and the polishing method includes a final polishing step P. In this polishing method, the final polishing step Phas a plurality of polishing sub-steps, the plurality of polishing sub-steps are continuously performed on the same polishing platen, a final polishing sub-step in the plurality of polishing sub-steps is a polishing sub-step Pof polishing using a polishing composition S, a polishing sub-step provided before the polishing sub-step Pin the plurality of polishing sub-steps is a polishing sub-step Pof polishing using a polishing composition S, and the polishing composition Ssatisfies at least one of the following condition (A) or the following condition (B): condition (A): a value of a haze parameter of the polishing composition Sobtained in a standard test 1 is smaller than a value of the haze parameter of the polishing composition Sobtained in the standard test 1, and condition (B): the polishing composition Scontains an abrasive A, a basic compound B, and hydroxyethyl cellulose.

Method of polishing object to be polished containing material having silicon-silicon bond

The present invention relates to a polishing composition containing an abrasive, a water-soluble polymer, an anionic surfactant, a basic compound, and water, in which the anionic surfactant has an oxyalkylene unit, and an average addition mole number of the oxyalkylene unit of the anionic surfactant is more than 3 and 25 or less. According to the present invention, it is possible to provide a polishing composition which can reduce the haze of a polished object and is also excellent in a polishing removal rate.

Polishing composition and polishing method using same

Provided is a polishing composition that includes a cellulose derivative and is effective for reducing surface defects after polishing. According to the present application, a polishing composition comprising an abrasive, a basic compound and a surface protective agent is provided. The surface protective agent contains a cellulose derivative and a vinyl alcohol-based dispersant. The surface protective agent has a dispersibility parameter &#x3b1; of less than 100.

Polishing composition

There is provided a polishing method capable of more reducing defects on a silicon wafer surface. A polishing method of a silicon wafer, which includes a polishing step and a surface treatment step conducted after the polishing step and in which the number of abrasives in a surface treatment composition used in the surface treatment step is 1.0&#xd7;10particles/mL or more and 1.0&#xd7;10particles/mL or less by calculating from (1 [mL]&#xd7;specific gravity of the composition [g/mL]&#xd7;concentration of the abrasives [wt %])/((4/3)&#x3c0;&#xd7;(average secondary particle diameter&#xd7;10[cm]/2)[/particle]&#xd7;specific gravity of the abrasives [g/cm]), using concentration of the abrasives in the surface treatment composition and an average secondary particle diameter measured by dynamic light scattering method, provided that all of the abrasives in the surface treatment composition used in the surface treatment step are assumed to have the average secondary particle diameter.

Method for polishing silicon wafer and surface treatment composition

This invention provides a silicon wafer polishing composition used in the presence of an abrasive. The composition comprises a silicon wafer polishing accelerator, an amide group-containing polymer, and water. The amide group-containing polymer has a building unit A in its main chain. The building unit A comprises a main chain carbon atom constituting the main chain of the amide group-containing polymer and a secondary amide group or a tertiary amide group. The carbonyl carbon atom constituting the secondary amide group or tertiary amide group is directly coupled to the main chain carbon atom.

Silicon wafer polishing composition

Provided are polishing compositions comprising a water-soluble polymer and water. The water-soluble polymer of an embodiment has a repeat unit that does not have any hydroxyl groups, and the water-soluble polymer has a hydroxyl group content in a range of 4 mmol/g or higher and 21 mmol/g or lower. The water-soluble polymer of another embodiment has a repeat unit A that has a hydroxyl group and a repeat unit B, and the number of moles of the repeat unit B in the total number of moles of all the repeat units of the water-soluble polymer is 5% or greater.

Polishing composition, method for producing polishing composition and polishing composition preparation kit

Provided are a polishing composition comprising a water-soluble polymer that has a molecular structure comprising a plurality of repeat unit species having different SP values and a polishing composition exhibiting an etching rate and an abrasive adsorption in prescribed ranges when determined by prescribed methods. Also provided is a method for producing a polishing composition, using an abrasive, a basic compound, a water-soluble polymer having an alkaline-hydrolytic functional group, and water. The method comprises a step of obtaining an agent A comprising at least the basic compound and a step of obtaining an agent B comprising at least the water-soluble polymer H.

Provided is a composition for polishing silicon wafers, having an excellent effect of reducing haze and having low agglomerating property. A composition for polishing silicon wafers provided here includes: an amido group-containing polymer A; and an organic compound B not containing an amido group. The amido group-containing polymer A has, on a main chain, a building block S derived from a monomer represented by General Formula (1). Molecular weight Mof the amido group-containing polymer A and molecular weight Mof the organic compound B have a relation satisfying 200&#x2264;M&#x3c;M. 

Composition for polishing silicon wafers

To perform polishing while reducing an LPD and preventing contamination with metals, particularly nickel and copper, in final polishing of a silicon wafer. A polishing composition contains abrasives, a water-soluble polymer, a basic compound, a chelating agent, and water, in which, when the particle diameter equivalent to a particle diameter at a cumulative volume of 10% from a smaller particle diameter side is defined as D10, the particle diameter equivalent to a particle diameter at a cumulative volume of 50% from the smaller particle diameter side is defined as D50, and the particle diameter equivalent to a particle diameter at a cumulative volume of 90% from the smaller particle diameter side is defined as D90 in a particle size distribution of particles present in the polishing composition, a value of a coarse particle frequency parameter A defined by (Expression 1) illustrated below is less than 1.7, A=(D90&#x2212;D50)/(D50&#x2212;D10) and the polishing composition is used for final polishing in silicon wafer polishing.

Polishing composition for silicon wafer and polishing method

Provided is a polishing composition with which surface defects can be efficiently reduced. This invention provides a polishing composition comprising a water-soluble polymer M. The main chain of the water-soluble polymer Mis formed with a non-cationic region as its main structural part and a cationic region located at least at one end of the main chain. The cationic region has at least one cationic group.

Provided is a polishing composition with which haze and surface defects can be reduced. This invention provides a polishing composition comprising a synthetic water-soluble polymer Mthat has a hydrophobic region at least at one end of its main chain. The hydrophobic region has at least one hydrophobic group derived from a polymerization initiator.

The polishing composition has a pH of 7 or more and is used in applications for polishing a silicon substrate. The polishing composition contains abrasive grains and a water-soluble polymer. The water-soluble polymer is a copolymer including a first monomer unit having a characteristic value P of 50-100 inclusive, and a second monomer unit having a characteristic value P of at least &#x2212;100 and less than 50. The characteristic value P is the result of subtracting an adsorption coefficient S2 of the abrasive grains obtained through a specific standard test B from a wettability coefficient S1 of the silicon substrate obtained through a specific standard test A.

Abrasive composition and method for producing semiconductor substrate

A polishing composition contains silicon dioxide, a water-soluble polymer, and water. An adsorbate containing at least part of the water-soluble polymer is adsorbed on the silicon dioxide. The adsorbate is contained in a concentration of 4 ppm by mass or more in terms of carbon. A percentage of the concentration of the adsorbate in terms of carbon relative to a total carbon concentration in the polishing composition is 15% or more.

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Kiyosu, Japan

Kohsuke Tsuchiya