Disco Corporation

Kohei Tsujimoto

Minoru Matsuzawa

Ryosuke Nishihara

Jun Koide

Tetsukazu Sugiya

A wafer processing method includes sticking an adhesive tape to the front surface of a wafer, disposing a thermocompression bonding sheet on the adhesive tape stuck to the front surface of the wafer. The thermocompression bonding sheet is heated and pressed by a flat member to execute pressure bonding of the thermocompression bonding sheet to the adhesive tape and integrate the thermocompression bonding sheet with the wafer. The processing method also includes holding the side of the thermocompression bonding sheet on a chuck table of a grinding apparatus and grinding the wafer into a desired thickness while supplying grinding water to the back surface of the wafer. The integrated wafer is separated from the chuck table and the thermocompression bonding sheet is separated from the adhesive tape.

Processing method of wafer

A method of processing a wafer having on a face side thereof a device area with a plurality of devices formed therein and an outer circumferential excess area surrounding the device area includes a grinding step for grinding a reverse side of the wafer corresponding to the device area with a grinding wheel that is smaller in diameter than the wafer, thereby forming a first portion corresponding to the device area and an annular second portion surrounding the first portion, the annular second portion being thicker and more protrusive toward a reverse side thereof than the first portion. In the grinding step, the grinding wheel and the wafer are moved relatively to each other so that the angle formed between the reverse side of the first portion and an inner side surface of the annular second portion is larger than 45&#xb0; and smaller than 75&#xb0;.

Wafer and method of processing wafer

A wafer processing method includes a first grinding step and a second grinding step. In the first grinding step, first grinding abrasives are moved in a processing feed direction that is a direction orthogonal to a holding surface of a chuck table of grinding apparatus and a wafer is ground to form a first circular recess in the back surface of the wafer. In the second grinding step, second grinding abrasives formed of finer abrasive grains than the first grinding abrasives are moved down in an oblique direction from the center side of the wafer toward the periphery of the wafer and the first circular recess is ground.

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Tokyo, Japan

Kohei Tsujimoto