Tokyo Electron Limited

Hitachi High-tech Corporation

Other

Hitachi-high-technologies Corporation

Zeon Corporation

Tohoku University

Tokyo Eectron Limited

Kohei Kawamura

Hiroyuki Kobayashi

Yasuo Kobayashi

Takaaki Matsuoka

Toshihisa Nozawa

Masaru Izawa

Yutaka Kouzuma

Nobuya Miyoshi

Takashi Akahori

Tadahiro Ohmi

Masahiro Nakamura

Kazunori Shinoda

Gishi Chung

Kiyotaka Ishibashi

Yasuhiro Oshima

Kazuyuki Hirozane

Michiaki Kobayashi

Kotaro Miyatani

Shigeru Kasai

Tadahiro Ishizaka

Takashi Suzuki

Masaru Hori

Joseph T Hillman

Atsushi Gomi

Yoshihide Yamaguchi

Junichi Arami

Naoyuki Kofuji

Tatsuya Sugimoto

Akinobu Teramoto

Yasuhiko Kojima

Hidenori Miyoshi

Yutaka Fujino

Toshiro Yamada

Hiroyuki Takahashi

Yusaku Kashiwagi

Bentley J Palmer

Kenji Ishikawa

Takashi Shigeoka

Sumiko Fujisaki

Naoki Yoshii

Koichi Takatsuki

Atsutoshi Inokuchi

Shuuichi Ishizuka

Kimiaki Tanaka

Hikaru Yoshitaka

Hiroto Otake

Shigeo Ashigaki

Akira Asano

Akira Tanihara

Takatoshi Kameshima

Yoshihisa Kagawa

Takuya Kurotori

Yoichi Inoue

Syoichi Abe

Seiji Yasuda

Yukio Fukuda

Koutarou Miyatani

Kazumasa Ookuma

Kenichi Kote

Provided is a plasma etching method which enables etching with high accuracy while controlling and reducing surface roughness of a transition metal film. The etching is performed for the transition metal film, which is formed on a sample and contains a transition metal element, by a first step of isotropically generating a layer of transition metal oxide on a surface of the transition metal film while a temperature of the sample is maintained at 100&#xb0; C. or lower, a second step of raising the temperature of the sample to a predetermined temperature of 150&#xb0; C. or higher and 250&#xb0; C. or lower while a complexation gas is supplied to the layer of transition metal oxide, a third step of subliming and removing a reactant generated by an reaction between the complexation gas and the transition metal oxide formed in the first step while the temperature of the sample is maintained at 150&#xb0; C. or higher and 250&#xb0; C. or lower, and a fourth step of cooling the sample.

Plasma etching method and plasma processing apparatus

The present invention provides a plasma processing method or a plasma processing method, which allows the evenness of etching amounts to increase and the yield of processing to improve. A method for etching a tungsten film includes: a first step of depositing a fluorocarbon layer and forming an intermediate layer that contains tungsten and fluorine and is self-limiting between the fluorocarbon layer and the tungsten film by supplying plasma of an organic gas containing fluorine to a base material having the tungsten film over at least a part of the surface; and a second step of removing the fluorocarbon layer and the intermediate layer by using plasma of an oxygen gas.

Plasma processing method and etching apparatus

An plasma etching method for etching a film layer includes a plurality of times repeating a step set including a first step of introducing a gas containing hydrogen fluoride into a processing chamber and supplying hydrogen fluoride molecules to the surface of an oxide film, a second step of exhausting the interior of the processing chamber in vacuum to remove the hydrogen fluoride, and a third step of introducing a gas containing hydrogen nitride into the processing chamber and supplying hydrogen nitride to the surface of the oxide film to form a compound layer containing nitrogen, hydrogen, and fluorine on the surface of the film layer, and removing the compound layer formed on the surface of the film layer. Foreign object contamination is prevented by inhibiting mixing of hydrogen fluoride gas and hydrogen nitride gas, and the etching amount is controlled by the number of times of repeating application thereof.

Plasma etching method and plasma etching apparatus

Integrated type ion shield for semiconductor manufacturing apparatus

Ion shield plate for semiconductor manufacturing apparatus

In an etching method of etching a tungsten film, the method is provided to execute a generating a surface reaction layer on a tungsten film that is formed on a surface of a base material by supplying a reactive species including fluorine which is generated in plasma onto the base material for a first predetermined time in a state where the base material of which the tungsten film is formed on at least a portion of the surface is cooled to a melting point temperature or lower of a tungsten fluoride, and a removing the surface reaction layer that is generated on the tungsten film by heating the base material of which the surface reaction layer is generated on the tungsten film to a boiling point temperature or higher of the tungsten fluoride for a second predetermined time.

Etching method and etching apparatus

Provided is a holding stage structure which holds a substrate and disposed in a process chamber that is vacuum-evacuatable and allows a predetermined process to be performed on the substrate therein. The holding stage structure includes: a holding stage body on which the substrate is placed; an elevation pin mechanism lowering the substrate on the holding stage body or raising the substrate from the holding stage body; and a stepped portion formed on the holding stage body so that a peripheral portion of a rear surface of the substrate placed on the holding stage body is exposed to a processing gas supplied into the process chamber.

Placing bed structure, treating apparatus using the structure, and method for using the apparatus

In a method for forming a fluorocarbon-based insulating film to be in contact with a metal, a microwave is irradiated to the metal to which moisture is adhered in a hydrogen-containing atmosphere. Then plasma CVD using a fluorocarbon-based gas is performed on the metal to which the microwave is irradiated to form the insulating film.

Method for forming insulating film and method for manufacturing semiconductor device

The present invention may be a semiconductor device including of a fluorinated insulating film and a SiCN film deposited on the fluorinated insulating film directly, wherein a density of nitrogen in the SiCN film decreases from interface between the fluorinated insulating film and the SiCN film. In the present invention, the SiCN film that is highly fluorine-resistant near the interface with the CFx film and has a low dielectric constant as a whole can be formed as a hard mask.

Film forming method for a semiconductor

That surface of an electrode platewhich is opposite to a susceptorhas a projection shape. The electrode plateis fitted in an openingof shield ringat a projection. At this time, the thickness of the projectionis approximately the same as the thickness of the shield ringAccordingly, the electrode plateand the shield ringform substantially the same plane. The major surface of the projectionhas a diameter 1.2 to 1.5 times the diameter of a wafer W. The electrode plateis formed of, for example, SiC.

Plasma process device and plasma process method

The present invention is a plasma processing method for forming a film on a substrate, the method including the steps of processing a first material gas with plasma having an electron density W and an electron temperature X, processing a second material gas with plasma having an electron density Y, which is different from the electron density W, and an electron temperature Z, which is different from the electron temperature X, and forming the film on the substrate by reacting the processed first material gas and the processed second material gas.

A method for fabricating a semiconductor device includes the steps of (a) forming a plasma of a gas having carbon and fluorine, and forming an internal insulation film provided with a fluorine-doped carbon film formed on a substrate using the plasma; (b) forming a metal film on the internal insulation film; (c) etching the metal film according to a pattern to form a hard mask; (d) forming a concave part in the fluorine-doped carbon film by etching the fluorine-doped carbon film using the hard mask; (e) forming a film formation of a wiring material on the substrate for filling the concave part with the wiring material; (f) removing an excess part of the wiring material and the hard mask on the fluorine-doped carbon film for exposing a surface of the fluorine-doped carbon film; and (g) removing an oxide formed on the surface of the fluorine-doped film.

Fabrication method of a semiconductor device and a semiconductor device

A plasma processing method for forming a film on a substrate using a gas processed by a plasma. The plasma processing method for forming a film includes the steps of forming a CF film on the substrate by using a CFgas (here, a is a counting number, and b is a counting number which satisfies an equation of 'b=2&#xd7;a&#x2212;2'), processing the CF film with the gas processed by the plasma, and forming an insulating film on the CF film processed by using an insulating material processed with the plasma.

Plasma processing method for forming a film and an electronic component manufactured by the method

A microwave is radiated into a processing chamber () from a planar antenna member of an antenna () through a dielectric plate (). With this, a CFgas supplied into the processing chamber () from a gas supply member () is changed (activated) into a plasma so as to form a fluorine-containing carbon film of a certain thickness on a semiconductor wafer (W). Each time a film forming process of forming a film on one wafer is carried out, a cleaning process and a pre-coating process are carried out. In the cleaning process, the inside of the processing chamber is cleaned with a plasma of an oxygen gas and a hydrogen gas. In the pre-coating process, the CFgas is changed into a plasma, and a pre-coat film of fluorine-containing carbon thinner than the fluorine-containing carbon film formed in the film forming process is formed.

Plasma processing method and plasma processing apparatus

Growing community of inventors

Hillsboro, OR, United States of America

Kohei Kawamura