Agc Inc.

Asahi Glass Company, Limited

Kohei Horiuchi

Mamoru Isobe

Motoshi Ono

Shigetoshi Mori

Keisuke Hanashima

Yuha Kobayashi

Kaede Katsuno

Shigeto Kumano

A glass substrate for a semiconductor package includes a first principal surface, a second principal surface, at least one hollowed-out portion, and at least one through hole formed in a surrounding of the at least one hollowed-out portion, wherein in a section of the at least one hollowed-out portion taken in a direction perpendicular to the first principal surface, a minimum diameter of the at least one hollowed-out portion is smaller than an opening diameter of the at least one hollowed-out portion at each of the first principal surface and the second principal surface.

Glass substrate having through hole and hollowed-out portion and method for producing the same

A glass substratehas a mark provided on a surfaceA of the glass substrate, the mark including plural dots, a depth H of each of the dotsis 0.5 &#x3bc;m or larger and 7.0 &#x3bc;m or smaller, and an inclination angle of a side surfaceB of each of the dotsis 5&#xb0; or larger and 56&#xb0; or smaller.

Glass substrate

A method of producing a glass substrate having a hole is provided. The method includes preparing the glass substrate having a first surface and a second surface facing each other; forming a hole in the glass substrate with a laser; and annealing the glass substrate placed on a first support substrate having a thermal expansion coefficient whose difference from a thermal expansion coefficient of the glass substrate is less than or equal to 1 ppm/K, where the first support substrate is placed on a second support substrate having a thermal expansion coefficient of less than or equal to 10 ppm/K.

Method of producing glass substrate having hole and glass laminate for annealing

A glass substrate includes a first surface and a second surface that are opposite to each other. Multiple through holes pierce through the glass substrate from the first surface to the second surface. Each of five through holes randomly selected from the multiple through holes includes a first opening at the first surface and a second opening at the second surface. The approximate circle of the first opening has a diameter greater than a diameter of the approximate circle of the second opening. The first opening has a roundness of 5 &#x3bc;m or less. Perpendicularity expressed by P=t/tranges from 1.00000 to 1.00015, where P is the perpendicularity, tis the distance between the center of the approximate circle of the first opening and the center of the approximate circle of the second opening, and tis the thickness of the glass substrate.

Disclosed is a method of forming a hole in a glass substrate by using a pulsed laser, the method including (1) preparing the glass substrate including a first surface and a second surface that face each other; (2) forming a concave portion on the first surface by irradiating, with a first condition, the pulsed laser onto the first surface of the glass substrate through a lens; and (3) forming the hole by irradiating the pulsed laser onto the concave portion with a second condition such that energy density of the pulsed laser is less than or equal to a processing threshold value of the glass substrate.

Method of forming hole in glass substrate by using pulsed laser, and method of producing glass substrate provided with hole

A glass substrate includes a plurality of through holes that penetrate from a first surface to a second surface of the glass substrate. Each through hole has an upper aperture with a first diameter on the first surface and a lower aperture with a second diameter on the second surface. For each of ten through holes selected from the plurality of through holes, a side wall length is obtained from the first and second diameters and the thickness of the glass substrate, and an R value is obtained by dividing the side wall length by the thickness of the glass substrate. The R values fall within a range of 1 to 1.1. A B value, obtained from dividing a difference between the greatest R value and the smallest R value by an average of the R values followed by multiplication with 100, is 5% or less.

Glass substrate and glass substrate for high frequency device

A method including a) forming a through-hole in a dummy substrate including a surface by radiating a laser to the surface of the dummy substrate in a state where the dummy substrate is moved relative to the laser along a direction parallel to the surface of the dummy substrate, b) determining an angle &#x3b1; (&#x2212;90&#xb0;&#x3c;&#x3b1;&#x3c;+90&#xb0;) of the through-hole relative to a line perpendicular to the surface of the dummy substrate, and c) forming a through-hole in the insulating substrate with the same conditions as step a) except for radiating a laser at an angle &#x3b2; relative to a line perpendicular to a surface of the insulating substrate. The angle &#x3b2; is set to be line symmetric with the angle &#x3b1; relative to the line perpendicular to the surface of the insulating substrate and satisfy a relationship of &#x3b2;=&#x2212;&#x3b1;.

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Chiyoda-ku, Japan

Kohei Horiuchi