Tokyo Electron Limited

Koei Ito

Yasuharu Sasaki

Shin Yamaguchi

Hiroki Endo

Dai Kitagawa

Nozomu Nagashima

Suguru Sato

Taisei Seguchi

A plasma processing apparatus includes a substrate support, an upper electrode, an inner chamber, and an exhaust device in an outer chamber. The substrate support is provided in the outer chamber. The upper electrode is provided above the substrate support. The inner chamber defines a substrate processing space on the substrate support. The exhaust device is connected to an exhaust port provided at a bottom portion of the outer chamber. The inner chamber includes a ceiling portion and a sidewall portion. The ceiling portion extends on the substrate processing space, provides a plurality of gas holes, and configures a shower head together with the upper electrode. The sidewall portion extends in a peripheral direction to surround the substrate processing space and provides a plurality of through-holes. The sidewall portion has an opening area that increases along a direction from a lower end toward an upper end of the sidewall portion.

Plasma processing apparatus and inner chamber

There is a substrate processing apparatus comprising: a chamber including a sidewall having an opening; a substrate support disposed in the chamber; a support member disposed above the substrate support; an inner wall member having a ceiling portion disposed above the substrate support and below the support member; a contact member attached to one of the support member and the inner wall member and configured to detachably fix the inner wall member to the support member by applying a spring reaction force to the other of the support member and the inner wall member in a horizontal direction; and an actuator configured to move the inner wall member downward to release the fixing of the inner wall member to the support member.

Substrate processing apparatus and maintenance method for substrate processing apparatus

A substrate support includes a base, a substrate support layer disposed on the base, the substrate support layer being formed of an insulating material, and an electrostatic internal electrode layer disposed in the substrate support layer, the electrostatic internal electrode layer including a body portion and a plurality of protruding portions, the body portion having a circular shape in a plan view, and the plurality of protruding portions radially protruding from the body portion.

Substrate support

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Miyagi, Japan

Koei Ito