Aviza Technology Limited

Aviza Europe Limited

Knut Beekmann

Christopher David Dobson

John Macneil

Katherine Giles

Antony Paul Wilby

Kathrine Giles

This invention relates to a method and apparatus for forming a film on the substrate. The method comprises supplying to the chamber in gaseous or vapor form a silicon containing organic compound and an oxidizing agent in the presence of a plasma to deposit a film on the substrate and setting the film such that carbon containing groups are retained therein. In particular embodiments the setting is achieved by exposing the film to Hplasma.

Method and apparatus for forming a film on a substrate

A barrier limits the diffusion of a metal, such as copper, into an insulating layer. The barrier may take the form of insulating layer made of a silicon carbide type material which has been exposed to ionised hydrogen subsequent to deposition. Preferably the material contains nitrogen and it is particularly preferred that the material has a dielectric constant of 3.5 or less.

Method of forming a diffusion barrier

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North Somerset, United Kingdom

Knut Beekmann