Siemens Aktiengesellschaft

International Business Machines Corporation

Klaus Roithner

K Paul Muller

David M Dobuzinsky

Dung-Ching Perng

Bertrand Flietner

Ting Hao Wang

A gas distribution plate ( ) for a semiconductor processing chamber ( ) includes a gas distribution plate for distributing gases across a surface of a semiconductor wafer ( ) to be processed in the chamber. The gas distribution plates has a substantially planar member having gas outlets for distributing a reactant gas across the surface of the semiconductor wafer, the gas outlet means includes a plurality of apertures ( ) defined in said planar member, the plurality of apertures having different areas at predetermined locations to adjust etching gas flow. A pump ( ) is provided for evacuating a reactant-product gas created across the surface of the semiconductor wafer during wafer processing. The pump ( ) includes a plurality of tubes extending through the planar member, the plurality of tubes having apertures, and the apertures have different areas at predetermined locations to adjust reactant gas and reactant-product gas flow wherein the gas outlets and the pump coact to substantially maintain a predetermined concentration of the reactant gas and a predetermined concentration of the reactant-product gas across the surface of the semiconductor wafer during wafer processing.

Spatially uniform gas supply and pump configuration for large wafer diameters

A method for increasing chip yield by reducing black silicon deposition in accordance with the present invention includes the steps of providing a silicon wafer suitable for fabricating semiconductor chips, depositing a first layer over an entire surface of the wafer, removing a portion of the first layer to expose a region suitable for forming semiconductor devices and etching the wafer such that a remaining portion of the first layer prevents redeposition of etched material on the wafer. A semiconductor assembly for reducing black silicon deposition thereon, includes a silicon wafer suitable for fabricating semiconductor chips, the wafer having a front surface for forming semiconductor devices, a back surface and edges. A deposited layer is formed on the wafer for covering the back surface and the edges such that redeposition of silicon on the back surface and edges of the wafer during etching is prevented.

Method and apparatus for preventing formation of black silicon on edges

Growing community of inventors

Dresden, Germany

Klaus Roithner