Siltronic Ag

Wacker Siltronic Gesellschaft F&uuml;r Halbleiter Materialien Ag

Klaus Messmann

Wolfgang Siebert

Wilfried Von Ammon

Reinhold Wahlich

Reinhard Schauer

Peter Storck

Timo Mueller

Guido Wenski

Gerhard Heier

Thomas Altmann

Friedrich Passek

Peter Krottenthaler

Erich Daub

R&uuml;diger Schmolke

Dieter Gr&auml;f

Arnold Kuehhorn

G&uuml;nther Obermeier

Johannes Studener

Martin Fürfanger

A silicon wafer having no epitaxially deposited layer or layer produced by joining to the silicon wafer, with a nitrogen concentration of 1&#xb7;10-8&#xb7;10atoms/cm, an oxygen concentration of 5.2&#xb7;10-7.5&#xb7;10atoms/cm, a central thickness BMD density of 3&#xb7;10-2&#xb7;10cm, a cumulative length of linear slippages &#x2266;3 cm and a cumulative area of areal slippage regions &#x2266;7 cm, the front surface having &#x3c;45 nitrogen-induced defects of &#x3e;0.13 &#x3bc;m LSE in the DNN channel, a layer at least 5 &#x3bc;m thick, in which &#x2266;1&#xb7;10COPs/cmwith a size of &#x2267;0.09 &#x3bc;m occur, and a BMD-free layer &#x2267;5 &#x3bc;m thick. Such wafers may be produced by heat treating the silicon wafer, resting on a substrate holder, a specific substrate holder used depending on the wafer doping. For each holder, maximum heating rates are selected to avoid formation of slippages.

Silicon wafer and process for the heat treatment of a silicon wafer

A semiconductor wafer with a front surface and a back surface and an epitaxial layer of semiconducting material deposited on the front surface. In the semiconductor wafer, the epitaxial layer has a maximum local flatness value SFQRof less than or equal to 0.13 &#x3bc;m and a maximum density of 0.14 scattered light centers per cm. The front surface of the semiconductor wafer, prior to the deposition of the epitaxial layer, has a surface roughness of 0.05 to 0.29 nm RMS, measured by AFM on a 1 &#x3bc;m&#xd7;1 &#x3bc;m reference area. Furthermore, there is a process for producing the semiconductor wafer. The process includes the following process steps: (a) as a single polishing step, simultaneous polishing of the front surface and of the back surface of the semiconductor wafer between rotating polishing plates while an alkaline polishing slurry is being supplied, the semiconductor wafer lying in a cutout of a carrier whose thickness is dimensioned to be 2 to 20 &#x3bc;m less than the thickness of the semiconductor wafer after the latter has been polished; (b) simultaneous treatment of the front surface and of the back surface of the semiconductor wafer between rotating polishing plates while a liquid containing at least one polyhydric alcohol having 2 to 6 carbon atoms is being supplied; (c) cleaning and drying of the semiconductor wafer; and (d) deposition of the epitaxial layer on the front surface of the semiconductor wafer produced in accordance with steps (a) to (c).

Epitaxially coated semiconductor wafer and process for producing it

Method for the production of an epitaxially grown semiconductor wafer

Growing community of inventors

Burghausen, Germany

Klaus Messmann