Infineon Technologies Ag

Klaus Kerkel

Stephan Bradl

Christine Lindner

A method is described in which a contact hole () to an interconnect () in an insulating layer () is fabricated. A barrier layer () is subsequently applied. Afterward, a photoresist layer () is applied, irradiated and developed. With the aid of a galvanic method, a copper contact () is then produced in the contact hole (). Either the barrier layer () or an additional boundary electrode layer () serves as a boundary electrode in the galvanic process. Critical metal contaminations are minimized in production.

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Neutraubling, Germany

Klaus Kerkel