Carl Zeiss Smt Gmbh

Carl Zeiss Sms Ltd.

Nawotec Gmbh

University System of Maryland

Carl Zeiss Microscopy Gmbh

Alis Corporation

Universitaet Kassel

Universitat Bielefeld

Klaus Edinger

Thorsten Hofmann

Christof Baur

Michael Budach

Billy W Ward

Raymond Hill

Randall G Percival

Louis S Farkas, Iii

Lars Markwort

Ulrich Mantz

Gabriel Baralia

Rainer Becker

Dirk Aderhold

Petra Spies

John Anthony Notte, Iv

Nicole Auth

Tristan Bret

Hans Wilfried Peter Koops

Jens Oster

Christian Felix Hermanns

Tilo Sielaff

Maksym Kompaniiets

Heiko Feldmann

Walid A Atia

Johannes Ruoff

Christopher C Davis

Igor I Smolyaninov

Hans Wilfried Koops

Hans W P Koops

Sergey Babin

John A Notte

Armin Gölzhäuser

Piotr Grabiec

Saeed Pilevar

Josef Sellmair

Pawel Szych

Ivajlo Rangelow

John Melngailis

Ivaylo Rangelow

Louis Farkas

Maria Spies

The present application relates to an apparatus and to a method for removing at least a single particulate from a substrate, especially an optical element for extreme ultraviolet (EUV) photolithography, wherein the apparatus comprises: (a) an analysis unit designed to determine at least one constituent of a material composition of the at least one single particulate; and (b) at least one gas injection system designed to provide a gas matched to the particular constituent in an environment of the at least one single particulate; (c) wherein the matched gas contributes to removing the at least one single particulate from the substrate.

Apparatus and method for removing a single particulate from a substrate

The present application relates to a method for disposing of excess material of a photolithographic mask, wherein the method comprises the following steps: (a) enlarging a surface of the excess material; (b) displacing the enlarged excess material on the photolithographic mask using at least one first probe of a scanning probe microscope; and (c) removing the displaced enlarged excess material from the photolithographic mask.

Method and apparatuses for disposing of excess material of a photolithographic mask

The present application relates to a scanning probe microscope comprising a probe arrangement for analyzing at least one defect of a photolithographic mask or of a wafer, wherein the scanning probe microscope comprises: (a) at least one first probe embodied to analyze the at least one defect; (b) means for producing at least one mark, by use of which the position of the at least one defect is indicated on the mask or on the wafer; and (c) wherein the mark is embodied in such a way that it may be detected by a scanning particle beam microscope.

Device and method for analyzing a defect of a photolithographic mask or of a wafer

Device and method for analysing a defect of a photolithographic mask or of a wafer

The invention relates to a scanning probe microscope, having: (a) a scanning device for scanning a measurement tip over a surface; (b) a cantilever for the measurement tip, wherein the cantilever has a torsion region; (c) wherein the torsion region is configured such that it undergoes torsion when a control signal is applied and thereby pivots the measurement tip; and (d) a control device for outputting the control signal when the measurement tip scans a region of the surface that can be examined more closely with a pivoted measurement tip than without pivoting the measurement tip.

Scanning probe microscope and method for examining a surface with a high aspect ratio

The invention refers to a method for analyzing a defect of an optical element for the extreme ultra-violet wavelength range comprising at least one substrate and at least one multi-layer structure, the method comprising the steps: (a) determining first data by exposing the defect to ultra-violet radiation, (b) determining second data by scanning the defect with a scanning probe microscope, (c) determining third data by scanning the defect with a scanning particle microscope, and (d) com-bining the first, the second and the third data.

Method and apparatus for analyzing and for removing a defect of an EUV photomask

The present invention relates to apparatuses and methods for examining a surface of a test object, such as e.g. a lithography mask. In accordance with one aspect of the invention, an apparatus for examining a surface of a mask comprises a probe which interacts with the surface of the mask, and a measuring apparatus for establishing a reference distance of the mask from a reference point, wherein the measuring apparatus measures the reference distance of the mask in a measurement region of the mask which is not arranged on the surface of the mask.

Apparatus and method for examining a surface of a mask

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

The present invention relates to a membrane comprising at least one molecular monolayer composed of low-molecular aromatics and cross-linked in the lateral direction, wherein the membrane has a thickness in the range from 1 to 200 nm and a perforation in the form of openings having a diameter in the range from 0.1 nm to 1 &#x3bc;m, to a method for the production thereof, and to a use thereof.

Perforated membranes

The present invention refers to an apparatus and a method for investigating an object with a scanning particle microscope and at least one scanning probe microscope with a probe, wherein the scanning particle microscope and the at least one scanning probe microscope are spaced with respect to each other in a common vacuum chamber so that a distance between the optical axis of the scanning particle microscope and the measuring point of the scanning probe microscope in the direction perpendicular to the optical axis of the scanning particle microscope is larger than the maximum field of view of both the scanning probe microscope and the scanning particle microscope, wherein the method comprises the step of determining the distance between the measuring point of the scanning probe microscope and the optical axis of the scanning particle microscope.

Apparatus and method for investigating an object

The invention relates to a method for electron beam induced etching of a material () with the method steps providing at least one etching gas at a position of the material () at which an electron beam impacts on the material () and simultaneously providing at least one passivation gas which is adapted for slowing down or inhibiting a spontaneous etching by the at least one etching gas.

Method for electron beam induced etching

Growing community of inventors

Lorsch, Germany

Klaus Edinger