Tokyo Electron Limited

Tohoku University

Kiyotaka Ishibashi

Toshihisa Nozawa

Caizhong Tian

Osamu Morita

Tadahiro Ohmi

Naoki Matsumoto

Tetsuya Goto

Masahiro Okesaku

Junichi Kitagawa

Takaaki Matsuoka

Kazuki Moyama

Yasuo Kobayashi

Kohei Kawamura

Tetsuya Nishizuka

Takehiro Tanikawa

Wataru Yoshikawa

Atsutoshi Inokuchi

Hiroyuki Matsuura

Satoru Kawakami

Jun Yoshikawa

Kazushi Kaneko

Noriaki Fukiage

Toshihiko Iwao

Jun Yamashita

Shinya Nishimoto

Cai Zhong Tian

Koji Koyama

Hideo Kato

Naoki Mihara

Nobuhiko Yamamoto

Hiroyuki Takaba

Kazunori Funazaki

Tamaki Yuasa

Shinji Komoto

Takahiro Hirano

Yoshiharu Kishida

Singo Furui

A plasma processing apparatus includes: a processing container having a cylindrical shape; a pair of plasma electrodes arranged along the longitudinal direction of the processing container while facing each other; and a radio-frequency power supply configured to supply a radio-frequency power to the pair of plasma electrodes. In the pair of plasma electrodes, an inter-electrode distance at a position distant from a power feed position to which the radio-frequency power is supplied is longer than an inter-electrode distance at the power feed position.

Plasma processing apparatus

A substrate processing apparatus of the present disclosure includes a placing table provided to be rotatable around an axis; a gas supplying section that supplies gas to regions through which a substrate sequentially passes while being moved in a circumferential direction with respect to the axis as the placing table is rotated; and a plasma generating section that generates plasma using the supplied gas. The plasma generating section includes an antenna that radiates microwaves, and a coaxial waveguide that supplies the microwaves to the antenna. Line segments constituting a plane shape of the antenna when viewed in a direction along the axis include two line segments which are spaced to be distant from each other as being spaced away from the axis. The coaxial waveguide supplies the microwaves to the antenna from a gravity center of the antenna.

Substrate processing apparatus

Provided is a holding stage structure which holds a substrate and disposed in a process chamber that is vacuum-evacuatable and allows a predetermined process to be performed on the substrate therein. The holding stage structure includes: a holding stage body on which the substrate is placed; an elevation pin mechanism lowering the substrate on the holding stage body or raising the substrate from the holding stage body; and a stepped portion formed on the holding stage body so that a peripheral portion of a rear surface of the substrate placed on the holding stage body is exposed to a processing gas supplied into the process chamber.

Placing bed structure, treating apparatus using the structure, and method for using the apparatus

This microwave plasma processing apparatus has, as a gas introduction mechanism for introducing a working gas inside a chamber (), electrical discharge prevention members (() to()), each of which is provided to a plurality of dielectric window gas passages (() to (()) through which a dielectric window () passes. Each electrical discharge prevention member (()), a portion () of which protrudes only a height h, which is greater than or equal to a predetermined distance H, upward from the rear surface of a dielectric window () on the inlet side, passes through an opening () of a slot plate (), and inserts into a branched gas supply path (()) of a gas branch part (). The gas branch part (), spring coils () and the slot plate (), which surround the protruding portion () of each electrical discharge prevention member (()), constitute an enclosing conductor ().

A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 &#x3bc;m to 70 &#x3bc;m, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 &#x3bc;m communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.

Shower plate sintered integrally with gas release hole member and method for manufacturing the same

A plasma processing device including a stage for holding a substrate, a processing vessel, a first supply unit, a masking portion, a dielectric member, a microwave introduction unit, and a second supply unit. The first supply unit supplies a first process gas for layer deposition to the processing space. The masking portion is electrically conductive and has a first surface facing the processing space, a second surface at an opposite side, and one or more through holes extending from the first surface to the second surface. The dielectric member is in contact with the second surface of the masking portion, and is formed with one or more cavities connected to the one or more through holes. The microwave introduction unit introduces microwaves to the dielectric member. The second supply unit supplies a second process gas for plasma processing into the cavities of the dielectric member.

Plasma processing device

An antenna, a dielectric window, a plasma processing apparatus and a plasma processing method are capable of improving uniformity of a substrate surface processing amount in the surface of the substrate. The antenna includes the dielectric window; and a slot plate, provided on one side of the dielectric window, having a plurality of slots. The dielectric windowhas a flat surfacesurrounded by a ring-shaped first recess; and a plurality of second recessesformed on the flat surfaceso as to surround a center of the flat surface. Here, the flat surfaceis formed on the other side of the dielectric window. When viewed from a thickness direction of the slot plate, a center of each second recessis located within each slotof the slot plate.

Antenna, dielectric window, plasma processing apparatus and plasma processing method

A plasma processing apparatus includes a plasma generating device configured to generate a plasma within a processing vessel by using a high frequency wave generated by a microwave generatorincluding a magnetronconfigured to generate the high frequency wave; detectorsandconfigured to measure a power of a traveling wave that propagates to a load side and a power of a reflected wave reflected from the load side, respectively; and a voltage control circuitconfigured to control a voltage supplied to the magnetronby a power supply. Further, the voltage control circuitincludes a load control device configured to supply, to the magnetron, a voltage corresponding to a power calculated by adding a power calculated based on the power of the reflected wave measured by the detectorto the power of the traveling wave measured by the detector

Plasma processing apparatus, plasma processing method and high frequency generator

A microwave supply unitof a plasma processing apparatusincludes a stub memberconfigured to be extensible from the outer conductortoward the inner conductor. The stub memberserves as a distance varying device for varying a distance in the radial direction between a part of the outer surfaceof the inner conductorand a facing member facing the part of the outer surface of the inner conductorin the radial direction, i.e., the cooling plate protrusion. The stub memberincludes a rod-shaped membersupported at the outer conductorand configured to be extended in the radial direction; and a screwas a moving distance adjusting member for adjusting a moving distance of the rod-shaped memberin the radial direction.

Plasma processing apparatus and substrate processing method

A plasma processing apparatus includes a processing chamber, a stage, a dielectric member, a microwave introduction device, an injector, and an electric field shield. The processing chamber has a processing space therein. The stage is provided within the processing chamber. The dielectric member has a through hole and is provided to face the stage. The microwave introduction device is configured to introduce microwave into the processing space via the dielectric member. The injector has at least one through hole and is made of a dielectric material, e.g., a bulk dielectric material. The injector is provided within the dielectric member. The injector and the through hole of the dielectric member form a path for supplying a processing gas into the processing space. The electric field shield encloses the injector.

A plasma generation chamber of a plasma processing apparatus is closed by a top plate. The top platehas recessesA on its surface facing the plasma generation chamber and a central recessB on an opposite surface. The top plateis coupled to an antenna thereon. If a microwave is supplied to the antenna, the microwave is radiated through slots of the antenna. The microwave is propagated through the top platesuch that the microwave has a plane of polarization and the microwave forms a circularly polarized wave as a whole. Here, resonance absorption of the microwave occurs at a side surface of recessesA and the microwave is propagated within the recessesA in a single mode. Strong plasma can be generated within each of the recessesA, so that a stable plasma mode can be generated in the top plate

Top plate of microwave plasma processing apparatus, plasma processing apparatus and plasma processing method

A manufacturing method of a top plate hermetically attached to an upper opening of a tubular shaped container body for forming a processing container of a plasma processing apparatus is provided. The manufacturing method includes the steps of; preparing a top plate body comprised of a dielectric body for transmitting an electromagnetic wave, and having a gas ejection hole for ejecting a gas into the processing container; forming a discharge prevention member having a discharge prevention member body comprised of a dielectric body having a permeability, and a dense member comprised of a dielectric body without a permeability covering at least a side face of the discharge prevention member body; and attaching the discharge prevention member in the gas ejection hole of the top plate body.

Manufacturing method of top plate of plasma processing apparatus

A method of cleaning a plasma processing apparatus for processing a target in a process container, which is vacuum-evacuatable, using plasma, includes performing a first cleaning process by supplying a cleaning gas into the process container to generate plasma and maintaining the pressure in the process container at a first pressure, and performing a second cleaning process by supplying a cleaning gas into the process container to generate plasma and maintaining the pressure in the process container at a second pressure that is higher than the first pressure. Accordingly, the plasma processing apparatus can be efficiently and rapidly cleaned without damaging at least one of the group consisting of inner surfaces of the process container and members in the process container.

Method of cleaning plasma-treating apparatus, plasma-treating apparatus where the cleaning method is practiced, and memory medium memorizing program executing the cleaning method

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Amagasaki, Japan

Kiyotaka Ishibashi