Nissin Electric Co., Ltd.

Sumitomo Electric Industries, Limited

Kuraray Co., Ltd.

Other

Emd Corporation

Kiyoshi Ogata

Yasunori Ando

Akinori Ebe

Hiroya Kirimura

Eiji Kamijo

Takashi Mikami

Satoshi Nishiyama

Naoto Kuratani

Haruyo Fukui

Hideki Moriguchi

Makoto Setoyama

Hiroshi Murakami

Yoshiharu Utsumi

Daisuke Inoue

Hisanori Ohara

Koji Miyake

Akira Kubotsu

Shigeo Matsumaru

Tsukasa Hayashi

Shigeaki Kishida

Yasuo Murakami

Naoto Okazaki

Shuichi Nogawa

Toru Watanabe

Miki Irie

Taizo Okazaki

Noriaki Matsumura

Satoshi Ohtani

Satoru Kukino

Akihiko Ikegaya

Shuhei Tsuchimoto

Keiichi Tsuda

Hirohisa Tanaka

Takahiro Nakahigashi

Yasuo Suzuki

Shigeki Sakai

Eiji Takahashi

Yuichi Setsuhara

Atsushi Tomyo

Kenji Kato

Jo Takeuchi

Yasushi Fujinami

Osamu Imai

Yasunori Andoh

There are provided a method and an apparatus which form silicon dots having substantially uniform particle diameters and exhibiting a substantially uniform density distribution directly on a substrate at a low temperature. A hydrogen gas (or a hydrogen gas and a silane-containing gas) is supplied into a vacuum chamber () provided with a silicon sputter target (e.g., target), or the hydrogen gas and the silane-containing gas are supplied into the chamber () without arranging the silicon sputter target therein, a high-frequency power is applied to the gas(es) so that plasma is generated such that a ratio (Si(288 nm)/H&#x3b2;) between an emission intensity Si(288 nm) of silicon atoms at a wavelength of 288 nm and an emission intensity H&#x3b2; of hydrogen atoms at a wavelength of 484 nm in plasma emission is 10.0 or lower, and preferably 3.0 or lower, or 0.5 or lower, and silicon dots (SiD) having particle diameters of 20 nm or lower, or 10 nm or lower are formed directly on the substrate (S) at a low temperature of 500 deg. C. or lower in the plasma (and with chemical sputtering if a silicon sputter target is present).

Silicon dot forming method and silicon dot forming apparatus

To prevent the film forming characteristic deterioration by a magnetic field of a magnetic filter to thereby make vacuum arc vapor deposition uniform, in the invention, plurality of magnets includes a terminal magnet closest to a plasma injection hole located at the other end of duct and specified magnets. The terminal magnet located closest to plasma injection hole may be set to incline to a plasma injection plane of the plasma injection hole. Further, at lease one of specified magnets may be inclined to the plasma injection plane. Further more, at least one of magnetic field generating coils may be formed with a plurality of electromagnetic coils, which are inclined at different angles with respect to a cross section of the duct. One of electromagnetic coils may be selectively energized by current on a basis of setting and controlling of deflection magnetic field generated by the magnetic filter.

Vacuum arc vapor deposition process and apparatus

Amorphous carbon coated tools include substrates formed from a cubic boron nitride sintered body, a diamond sintered body, a silicon nitride sintered body, or an aluminum oxide-titanium carbide sintered body, and amorphous carbon films thereon to make the cutting edges of the tools. The amorphous carbon films contain hydrogen at 5 atomic percent or below and have a maximum thickness of 0.05 &#x3bc;m to 0.5 &#x3bc;m on the cutting edges. The amorphous carbon films are most suitable for applications to cutting tools exemplified by cutters, knives, and slitters, and to indexable inserts used for example in turning tools including drills, endmills, and reamers, and milling cutters.

Amorphous carbon coated tools and method of producing the same

An amorphous carbon coated tool includes a base material of WC base cemented carbide, and an amorphous carbon film formed on this base material. The cobalt content in the base material is at least 12% by mass. The maximum thickness of the amorphous carbon film is at least 0.05 &#x3bc;m and not more than 0.5 &#x3bc;m at the cutting edge. The amorphous carbon film is deposited with graphite as the source material by physical vapor deposition in an atmosphere substantially absent of hydrogen. The amorphous carbon film coated tool superior in wear resistance and adhesion resistance is preferably applicable to rotating tools such as drills, end mills and reamers, indexable inserts used for milling cutters and turning tools, and cutting-off tools such as cutters, knives, or slitters.

Amorphous carbon coated tool and fabrication method thereof

A carbon film C containing carbon as a main component, formed on the surface of a soft base material , characterized in that the film C is cracked A and divided into a plurality of regions B, and an average area of respective regions (blocks) surrounded by cracks A is 0.15&times;10 mm to 20&times;10 mm .

Carbon film and method of forming the same

A method of forming a silicon-contained crystal thin film can efficiently form the crystal thin film of a relatively large thickness. In the method, hydrogen ions are implanted into a silicon-contained crystal substrate. Voids are formed by immersing the ion-implanted crystal substrate in a melted metal liquid containing, e.g., silicon and indium for heating the substrate. While pressing an ion-injected surface of the substrate, the substrate is heated by the melted metal liquid to form the voids. By cooling the liquid, the silicon in the supersaturated liquid is deposited on the surface of the substrate so that the silicon-contained crystal film is formed on the surface of the substrate. The substrate is divided in the void-formed position. Thereby, a thin film including the silicon-contained crystal film layered on a portion of the substrate is obtained. The silicon-contained crystal thin film thus obtained can be adhered to a support substrate, if necessary.

Method of forming silicon-contained crystal thin film

In a thin film forming method and an apparatus A for implementing the method, a deposition chamber provided with a substrate holder and a radical emitting device continuing to the chamber for emitting neutral radicals uniformly to a whole deposition target region of a deposition target substrate S held by the holder are used. Deposition gas plasma PL is formed at the vicinity of the substrate S on the holder by supplying a predetermined deposition gas into the chamber . Neutral radicals RA are produced by exciting and dissociating a predetermined radical material gas in the radical emitting device , and the radicals are uniformly emitted to the deposition target region of the substrate S for forming a predetermined thin film on the substrate S.

Thin film forming method and thin film forming apparatus

A method of manufacturing a crystalline silicon base semiconductor thin film on a substrate, includes the steps of forming a thin film primarily made of silicon on the substrate by forming plasma of a film material gas containing at least a silicon base gas at the vicinity of the substrate; and crystallizing the silicon in the thin film primarily made of the silicon by emitting excited particles produced from an excited particle material gas to the substrate. At least one of the film material gas and the excited particle material gas contains an impurity gas for forming the silicon semiconductor, and thereby the crystalline silicon base semiconductor thin film is formed on the substrate.

Method of manufacturing a crystalline silicon base semiconductor thin film

A method and apparatus for radiation of ions from an ion source,onto a surface of an objective substrate T and vacuum evaporation of a predetermined material from an evaporation source,onto the surface of the substrate, simultaneously while the substrate is continuously moved. The ion radiation from the ion source,is applied to a portion of a region reached by the evaporation material from the evaporation source,upstream relative to the direction of movement of the substrate from the center of that region and which is lower in evaporation speed than the center of the region, to thereby continuously form a mixture layer of substrate material atoms and evaporation material atoms on the surface of the substrate and then continuously form a vacuum evaporation film with a predetermined thickness on the mixture layer.

Film forming method and apparatus

A film forming apparatus includes a silicon film forming vacuum chamber for forming a crystalline silicon film on a substrate; a film forming device provided for the vacuum chamber for forming a pre-film of the crystalline silicon film on a target surface of the substrate; and an energy beam irradiating device provided for the vacuum chamber for irradiating the pre-film with an energy beam for crystallizing the pre-film. This film forming apparatus produce a crystalline silicon film having a good quality as a semiconductor film for a TFT or the like with good productivity.

Film forming apparatus for forming a crystalline silicon film

A thin film forming apparatus has a vacuum chamber as a film forming chamber, a plasma generating unit and an ion source. In the vacuum chamber, a substrate is placed and a thin film is formed on the substrate. The plasma generating unit decomposes a source gas introduced into the vacuum chamber to generate a plasma of the source gas near a film-forming surface of the substrate within the vacuum chamber. The ion source is provided around the vacuum chamber. The ion source produces ion beams that are drawn out to be directed substantially parallel to the film-forming surface of the substrate to irradiate the plasma.

Thin film forming apparatus

A method of manufacturing an ultraviolet resistant object, wherein the object has at least a portion made of a polymer material, and is provided with an ultraviolet shielding film covering at least a portion of a surface of the portion made of the polymer material, including the steps of forming the ultraviolet shielding film by vapor deposition over the surface of the portion to be covered with the film; and irradiating, prior to the formation of the ultraviolet shielding film or in an initial stage of the film forming step, the film formation surface with ions with an energy in a range from 0.05 keV to 2 keV to attain the total irradiation rate in a range from 1.times.10.sup.13 ions/cm.sup.2 to 5.times.10.sup.17 ions/cm.sup.2.

Method of manufacturing an ultraviolet resistant object

There is provided a thin film forming apparatus in which plasma of high frequency is made of raw material gas in a film forming chamber 7, a thin film is formed on a surface of a substrate 12 in the film forming chamber 7 by the plasma of high frequency, and a characteristic of the thin film is controlled by irradiating ion beams 4 onto the surface of the substrate 12 at the same time, characterized in that: the substrate 12 is composed of a square plate having a regular square surface or a rectangular surface; and the thin film forming apparatus is provided with a high frequency electrode 13 for forming the plasma of high frequency into a cube or a rectangular parallelepiped to cover an overall surface of the substrate 12, on the surface side of the substrate 12.

A copper film coated substrate includes a substrate and a copper film formed on a surface of the substrate. The copper film has an X-ray diffraction intensity of 2.0 cps/nm or more per unit film thickness at a crystal orientation (111) face of the copper film. A crystal orientation of a copper thin film is controlled by irradiating a surface of a substrate with inert gas ions before forming a copper thin film on the substrate by a physical vapor deposition process. A copper thin film is formed by irradiating a surface of a substrate with ions, and depositing a copper thin film on the irradiated substrate. In the ion irradiating step, an ion irradiation energy for a dosage of the irradiated ions is controlled, so that crystal is greatly grown to be orientated in a direction of copper (111) face with a less dosage of the irradiated ions.

Copper crystal film coated organic substrate

A film carrier type substrate includes a film made of organic high molecular substance, a metal layer formed over the film by depositing metal vapor and irradiating nitrogen gas ions on the film and a mixing layer made of a mixture of the materials of both the metal layer and the film formed in the interface between the metal layer and the film. Prior to forming the metal layer, inert gas ions and/or nitrogen gas ions may be irradiated on the film in advance.

Method of manufacturing film carrier type substrate

Growing community of inventors

Kyoto, Japan

Kiyoshi Ogata