Nec Corporation

Nec Electronics Corporation

Renesas Electronics Corporation

Riken Corporation

Kiyoshi Nikawa

Toyokazu Nakamura

Yasuko Hanagama

Tohru Tsujide

Masayoshi Tonouchi

Kodo Kawase

Masatsugu Yamashita

Tohru Tujide

Toshihiro Kiwa

Apparatus for inspection and fault analysis of semiconductor chip includes stage on which to mount LSI chip, and test pattern generator supplying test pattern via stage to LSI chip. Apparatus also includes optical system having function of modulating laser beam. This optical system operates so that LSI chip is scanned and illuminated by modulated laser beam. IR-OBIRCH controller performs image processing of taking out only signal of preset frequency from signal from LSI chip via lock-in amplifier, and correlates signal taken out with scanning points. Lock-in amplifier is adapted to take out only signal of preset frequency from signal from LSI chip. A display section displays image based on image signal from IR-OBIRCH controller which confirms presence or absence of abnormal current route in LSI chip based on image signal.

Method and apparatus for inspection and fault analysis

Failure analysis method includes performing fixed radiation of semiconductor chip (wafer) by photocurrent generation laser beam, scanning and radiating a region to be observed on semiconductor chip by heating laser beam, detecting, by a SQUID fluxmeter, current change generated in the semiconductor chip by radiating the photocurrent generation laser beam and the heating laser beam, and analyzing failure of the semiconductor chip based on current change detected by the SQUID fluxmeter. Radiation of photocurrent generation laser beam and heating laser beam are performed from a back surface side of the LSI chip, and detection by the SQUID fluxmeter is performed on a front surface side of the LSI chip. In analysis of failure of the LSI chip, image processing is performed in which a signal outputted from the SQUID fluxmeter is made to correspond to a scanning point. Visualization of defects is possible.

Failure analysis method and failure analysis apparatus

A non-destructive testing method of improved efficiency. Two one-dimensional images are obtained by scanning an optical line over an object to be tested in an X- and Y-directions each for one scan in lieu of conducting a prior art method of two-dimensionally scanning a optical spot on the object to be tested. A two-dimensional image is reconstructed from the obtained two one-dimensional images. Since only two relative scans between the object to be tested and the optical line is necessary, scanning time is remarkably shortened in comparison with that of the prior art.

Non-destructive testing apparatus and non-destructive testing method

To detect a defect without being limited to the current path of a sample. The presence or absence of a defect in a sample is detected by allowing said sample to stand for a predetermined period of time after heating said sample with a heat source and by observing the temperature distribution formed on said sample by an observation unit.

A non-destructive method of narrowing down the location of a failure in a sample includes a first step of acquiring first and second images of magnetic-field distributions obtained by scanning a laser beam irradiating first and second samples, respectively, and if there is a difference between the first and second images of the magnetic-field distributions, a second step of acquiring first and second current images from magnetic-field distributions acquired by scanning the first and second samples by a magnetic-field detector in a state in which a prescribed location on the first and second samples is being irradiated by the laser beam. The difference between the first and second current images is found and, based upon the difference image found, it becomes possible to identify a disparity in current paths relating to the prescribed location on the first and second samples.

Inspection method and apparatus using scanning laser SQUID microscope

An apparatus for diagnosing a fault in a semiconductor device includes an laser applying unit, a detection/conversion unit, and a fault diagnosis unit. The semiconductor device is held at a state where no bias voltage is applied thereto. The laser applying unit then applies a pulse laser beam having a predetermined wavelength to the semiconductor device so as to two-dimensionally scan the semiconductor device with the pulse laser beam. The detection/conversion unit detects an electromagnetic wave generated from a laser applied position in the semiconductor device, and converts the detected electromagnetic wave into a time-varying voltage signal that corresponds to a time-varying amplitude of an electric field of the electromagnetic wave. The fault diagnosis unit derives an electric field distribution in the semiconductor device on the basis of the time-varying voltage signal to perform fault diagnosis on the semiconductor device.

Method and apparatus for diagnosing fault in semiconductor device

A nondestructive inspection device (or method) is basically configured such that a laser beam (1300 nm) is irradiated on a surface (or back) of a semiconductor device chip to scan. Due to irradiation of the laser beam, a defect position is heated to cause a thermoelectromotive current, which induces a magnetic field. A magnetic field detector such as SQUID detects a strength of the magnetic field, based on which a scan magnetic field image is produced. A display device superimposes the scan magnetic field image on a scan laser microphotograph on a screen, so it is possible to perform defect inspection on the semiconductor device chip. Incidentally, a semiconductor device wafer is constructed to include a thermoelectromotive force generator and its wires, which are electrically connected to first-layer wires. By irradiation of the laser beam on the thermoelectromotive force generator, it is possible to detect a short-circuit defect, which lies between the first-layer wires. Further, it is possible to perform nondestructive inspection on a semiconductor integrated circuit, which is in an intermediate stage of manufacture before formation of bonding pads and which includes a closed circuit configured by a first-layer wire, including a thermoelectromotive force generating defect, a circuit via and an inspection via as well as a metal film, which is formed in a relatively broad range of a surface area and is used to form a second-layer wire.

Device and method for nondestructive inspection on semiconductor device

To provide a non-destructive inspection method including: a first step of generating a laser light ranging in wavelength from 300 nm to 1,200 nm, and generating a laser beam converging into a predetermined beam diameter; a second step of predetermined electrical connection means configuring a predetermined current path for passing an OBIC current generated by an OBIC phenomenon when the laser beam is radiated onto the p-n junction and the vicinity of the p-n junction formed in the semiconductor chip to be inspected at least in the substrate including a wafer state and an installation state during the production process; a third step of scanning a predetermined area of a semiconductor chip while radiating the laser beam; a fourth step of magnetic flux detection means detecting magnetic flux induced by the OBIC current generated by the laser beam at each radiation point scanned in the third step; and a fifth step of determining whether or not there is a resistance increase defect including a disconnection defect or a leak defect including a short circuit defect in the current path including the radiation point of said semiconductor chip based on said magnetic flux detected in the fourth step.

Non-destructive inspection method

Laser beam,having an irradiation power not less than 1 mW is irradiated onto an observed region, and a variation in a power source current,is detected. When the laser beam,is irradiated onto a parasitic insulating film,which is a parasitic MIM structural spot, the current,increases due to a temperature characteristic of the current,flowing through the parasitic insulating film,, whereby the portion of the parasitic MIM structure can be detected. Moreover, laser beam,having a wavelength not less than 1.0 &mgr;m is irradiated onto an observed region from the back surface of the chip, and a variation in the power source current is detected. Light having a wavelength not less than 1.0 &mgr;m has the ability to travel through a Si substrate,so that the laser beam reaches a wiring portion. Irradiation of the laser beam onto the parasitic insulating film,having the parasitic MIM structure increases the current, so that the portion of the parasitic MIM structure can be detected.

Parasitic MIM structural spot analysis method for semiconductor device and parasitic MIM structure spot analysis method for silicon semiconductor device

Infrared laser beam (11) is irradiated onto an integrated circuit (12) as a sample mounted on a sample stage (21) from an infrared laser beam source (23) through a microscope section body (24) and an objective lens (25). A constant voltage source (15) is connected to a power source terminal of the integrated circuit (12). A variation in a current due to a variation in a resistance of a wiring portion due to the irradiation is produced at a ground terminal of the integrated circuit (12). A current variation inspection section (17) detects the current variation. A system control/signal processing section (27) processes the signal and allows an image/waveform display section (28) to display a current image, a defect image or a current waveform. A defect of a wiring may be detected using visible light beam after localization of a suspected failure portion using infrared beam.

Inspection method and wiring current observation method for

A supersonic wave beam producing device projects a supersonic wave beam 5 on a semiconductor integrated circuit chip 2 while a voltage is supplied to a semiconductor integrated circuit in the chip from a constant voltage source 1. A current detecting device 7 detects a change of a current in the circuit while the chip is supplied with the supersonic wave beam. In this event, the constant voltage source may be omitted. A supersonic wave beam producing device may project a supersonic wave beam 5 on a semiconductor integrated circuit chip 2 while a current is supplied to a semiconductor integrated circuit. In this event, a voltage detecting device detects a change of a voltage between two ones of terminals of the circuit.

Method and device of testing semiconductor integrated circuit chip

An ultrasonic wave beam producing device scans an ultrasonic wave beam 5 across a semiconductor integrated circuit chip 2 while detecting a voltage applied across the semiconductor integrated circuit chip 2 from a constant voltage source 1. In this way the semiconductor integrated circuit chip is tested without creating electron-hole pairs.

Method and device of testing a semiconductor integrated circuit chip in

While an ultrasonic wave beam producing device scans an ultrasonic wave beam 5 across a semiconductor integrated circuit chip 2, a current through the circuit chip is detected. In this way, the semiconductor integrated circuit chip may be accurately tested, and the creation of electron-hole pairs is avoided.

Growing community of inventors

Kanagawa, Japan

Kiyoshi Nikawa