Fujitsu Corporation

Fujitsu Microelectronics Limited

Kiyoshi Irino

Kanetake Takasaki

Yoshihiro Sugita

Yusuke Morisaki

Naohiro Takahashi

Toshiro Nakanishi

Satoshi Ohkubo

Taro Sugizaki

Ken-ichi Hikazutani

Tatsuya Kawamura

Hitoshi Tanaka

Yasuyuki Tamura

Yoshihiro Sugiyama

Takayuki Ohba

Yoshihisa Iba

Chikako Yoshida

Yoshiaki Tanida

Shiqin Xiao

Takayuki Aoyama

A method of inspecting defects on an object includes irradiating predetermined particles with a laser beam to measure first scattered light intensities, irradiating plural types of defects with the laser beam to measure second scattered light intensities, determining types of some defects selected out of the plural types of defects using the first scattered light intensities, setting a discrimination line indicating a boundary value of the second scattered light intensities based on the determination, and discriminating, using the discrimination line, defects on the object.

Method, system and apparatus of inspection

An inspecting method is capable of efficiently inspecting a wafer. According to the inspecting method, the chip area of a wafer is inspected for defects, and based on the results, a defect density Dof each of peripheral-zone chips in the chip area which are located closely to the peripheral area of the wafer is calculated. A peripheral-zone chip with a high defect density Dis selected, and an area in the peripheral area which is outward of the selected peripheral-zone chip is inspected for defects. Since only the area in the peripheral area which is located outward of the peripheral-zone chip selected based on the defect density Dis inspected for defects, the wafer is inspected efficiently.

Inspecting method, inspecting apparatus, and method of manufacturing semiconductor device

A method of fabricating a semiconductor device which includes introducing, after a step of patterning a gate electrode, nitrogen atoms into an oxide film covering a device region on a semiconductor substrate, by exposing said oxide film to an atmosphere containing-nitrogen, such that said nitrogen atoms do not reach a region underneath said gate electrode, covering, after said step of introducing nitrogen atoms, said oxide film including said gate electrode by a CVD oxide film continuously without taking out said semiconductor substrate out of a processing chamber and forming a sidewall oxide film on a sidewall surface of said gate electrode by etching back said CVD oxide film.

Method of fabricating a semiconductor device containing nitrogen in an oxide film

An insulating film made of zirconia or hafnia is formed on the surface of a semiconductor substrate. A partial surface area of the insulating film is covered with a mask pattern. By using the mask pattern as a mask, ions are implanted into a region of the insulating film not covered with the mask pattern to give damages to the insulating film. By using the mask pattern as a mask, a portion of the insulating film is etched.

[object Object]

A manufacture method for a semiconductor device includes the steps of: (a) transporting a silicon wafer into a reaction chamber having first and second gas introducing inlet ports; (b) introducing an oxidizing atmosphere via the first gas introducing inlet port and raising the temperature of the silicon wafer to an oxidation temperature; (c) introducing a wet oxidizing atmosphere to form a thermal oxide film on the surface of the silicon wafer; (d) purging gas in the reaction chamber by using inert gas to lower a residual water concentration to about 1000 ppm or lower; and (e) introducing an NO or NO containing atmosphere into the reaction chamber via the second gas introducing inlet port while the silicon wafer is maintained above 700&#xb0; C. and above the oxidation temperature, to introduce nitrogen into the thermal oxide film and form an oxynitride film. A thin oxynitride film can be manufactured with good mass productivity.

Manufacture system for semiconductor device with thin gate insulating film

A semiconductor device includes a substrate, a gate oxide film formed on the substrate, a gate electrode provided on the gate oxide film, first and second diffusion regions formed in the substrate at both lateral sides of the gate electrode. The gate electrode includes a first region located immediately underneath the gate electrode and a second region adjacent to the first region, wherein the first and second regions contain N atoms with respective concentrations such that the second region contains N with a higher concentration as compared with the first region.

Method of fabricating a semiconductor device containing nitrogen in a gate oxide film

An ultra high-speed semiconductor device has a high-K dielectric gate insulator layer, wherein spread of impurities to a Si substrate from a gate electrode through the high-K dielectric gate insulator layer, and spread of oxygen and metallic elements from the high-K dielectric gate insulator layer to the Si substrate or the gate electrode are suppressed by arranging the high-K dielectric film sandwiched by nitrogen atomic layers on the Si substrate that is covered by an oxygen atomic layer.

Semiconductor device having a high-dielectric gate insulation film and fabrication process thereof

A semiconductor device in which the insulation characteristics of an insulating film of multilayer structure including a lower-layer insulating film and a high-dielectric-constant film formed on the lower-layer insulating film are ensured, and a method for fabricating such a semiconductor device. A silicon oxide film or a silicon oxynitride film is formed on a semiconductor substrate as a lower-layer insulating film and part of the lower-layer insulating film is removed. Then a high-dielectric-constant film the dielectric constant of which is higher than that of the lower-layer insulating film is formed on the exposed semiconductor substrate and the lower-layer insulating film. If the lower-layer insulating film is a silicon oxide film, then a metallic compound not including chlorine is used for forming this high-dielectric-constant film. If the lower-layer insulating film is a silicon oxynitride film, then a metallic chloride can be used for forming this high-dielectric-constant film.

Semiconductor device and method for fabricating the same

A manufacture method for a semiconductor device includes the steps of: (a) transporting a silicon wafer into a reaction chamber having first and second gas introducing inlet ports; (b) introducing an oxidizing atmosphere via the first gas introducing inlet port and raising the temperature of the silicon wafer to an oxidation temperature; (c) introducing a wet oxidizing atmosphere to form a thermal oxide film on the surface of the silicon wafer; (d) purging gas in the reaction chamber by using inert gas to lower a residual water concentration to about 1000 ppm or lower; and (e) introducing an NO or N O containing atmosphere into the reaction chamber via the second gas introducing inlet port while the silicon wafer is maintained above 700&deg; C. and above the oxidation temperature, to introduce nitrogen into the thermal oxide film and form an oxynitride film. A thin oxynitride film can be manufactured with good mass productivity.

Growing community of inventors

Kawasaki, Japan

Kiyoshi Irino