Hitachi Chemical Company, Ltd.

Kiyohito Tanno

Yasushi Kurata

Jun Matsuzawa

Masato Yoshida

Toranosuke Ashizawa

Hiroki Terazaki

Yuuto Ootuki

Yoshio Honma

Masato Hitachi Chemical Co Ltd Yoshida

Hiroki Teresaki

Jun Hitachi Chemical Co Ltd Matsuzawa

To polish polishing target surfaces of SiOinsulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cmand ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor which make use of this abrasive.

Abrasive, method of polishing target member and process for producing semiconductor device

To polish polishing target surfaces of SiOinsulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cmand ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.

A cerium oxide abrasive slurry having, dispersed in a medium, cerium oxide particles whose primary particles have a median diameter of from 30 nm to 250 nm, a maximum particle diameter of 600 nm or smaller, and a specific surface area of from 7 to 45 m./g, and slurry particles have a median diameter of from 150 nm to 600 nm. The cerium oxide particles have structural parameter Y, representing an isotropic microstrain obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.01 to 0.70, and structural parameter X, representing a primary particle diameter obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.08 to 0.3. The cerium oxide abrasive slurry is made by a method of obtaining particles by firing at a temperature of from 600&#xb0; C. to 900&#xb0; C. and then pulverizing, then dispersing the resulting cerium oxide particles in a medium.

Cerium oxide abrasive and method of polishing substrates

A cerium oxide abrasive slurry having, dispersed in a medium, cerium oxide particles whose primary particles have a median diameter of from 30 nm to 250 nm, a maximum particle diameter of 600 nm or smaller, and a specific surface area of from 7 to 45 m/g, and slurry particles have a median diameter of from 150 nm to 600 nm. The cerium oxide particles have structural parameter Y, representing an isotropic microstrain obtained by an X-ray Rietvelt method (with RIETAN-94), of from 0.01 to 0.70, and structural parameter X, representing a primary particle diameter obtained by an X-ray Rietvelt method (with RIETAN-94), of from 0.08 to 0.3. The cerium oxide abrasive slurry is made by a method of obtaining particles by firing at a temperature of from 600&#xb0; C. to 900&#xb0; C. and then pulverizing, then dispersing the resulting cerium oxide particles in a medium.

The invention relates to an abrasive containing a slurry of the cerium oxide grains dispersed in water. The Cerium oxide grains are obtained by adding hydrogen peroxide to an aqueous dispersion of cerium carbonate. The Cerium oxide grains are obtained by oxidizing a precipitate, which is formed through addition of ammonium hydrogencarbonate to an aqueous solution of cerium nitrate, with hydrogen peroxide. The Cerium oxide grains are obtained by neutralizing or alkallfying an aqueous solution of cerium ammonium nitrate.

Cerium oxide abrasive for polishing insulating films formed on substrate and methods for using the same

To polish polishing target surfaces of SiO insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.

Abrasive, method of polishing wafer, and method of producing semiconductor device

This invention provides a cerium oxide abrasive with which the surfaces of substrates such as SiO,insulating films can be polished at a high rate without causing scratches. The abrasive of the present invention comprises a slurry comprising cerium oxide particles whose primary particles have a diameter of from 10 nm to 600 nm and a median diameter of from 30 nm to 250 nm and slurry particles have a median diameter of from 150 nm to 600 nm and a maximum diameter of 3,000 nm or smaller, the cerium oxide particles being dispersed in a medium.

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Ibaraki-ken, Japan

Kiyohito Tanno