Az Electronic Materials USA Corp.

Kiyohisa Takahashi

Yusuke Takano

Tetsuo Okayasu

Yasushi Akiyama

Sung-Eun Hong

Masato Nishikawa

The composition for preventing development-defects containing (1) an ammonium salt, a tetraalkylammonium salt or a Cto Calkanolamine salt of Cto Cperfluoroalkylcarboxylic acid, Cto Cperfluoroalkylsulfonic acid and perfluoroadipic acid, or (2) a fluorinated alkyl quaternary ammonium salt of inorganic acid, wherein said surfactant is formed at the equivalent ratio of acid to base of 1:1-1:3 is applied on a chemically amplified photoresist coating on a substrate having a diameter of 8 inches or more. The chemically amplified photoresist coating is baked before and/or after applying the composition for preventing development-defects described above. Then, the baked coating with the development-defect preventing composition coating is exposed to light, post-exposure-baked, and developed. By this process, compared with the case of not using the composition for preventing development-defects, the amount of reduction in film thickness of the photoresist subsequent to development treatment is made further bigger by 100 &#x212b; to 600 &#x212b;, and the development-defects on a substrate having a diameter of 8 inches or more is reduced as well as a resist pattern having a good cross section form can be formed without T-top form etc.

Process for preventing development defect and composition for use in the same

A modified polyvinyl alcohol (PVA) protected with a protecting group of the present invention is one wherein an amount of high-molecular weight body components of the modified polyvinyl alcohol having a weight-average molecular weight of 250,000 or more as determined by polyethylene glycol standards according to a gel permeation chromatography is 1000 ppm or less in the modified polyvinyl alcohol. The modified PVA is prepared by removing a metal ion and an acid from the modified PVA such as acetalized PVA with ion exchange treatment and then heat-treating at 80&#xb0; C. or higher. An auxiliary for fine pattern formation of the present invention comprises the aforementioned modified PVA, a water-soluble crosslinking agent, and water or a mixed solvent of water and a water-soluble organic solvent. The auxiliary for fine pattern formation is applied over a resist patternand a coated layeris formed thereon. Then the resist patternand the coated layerare heated and thereby an acid is diffused from the resist patternto the coated layer. As a result, the coated layer in the vicinity of the resist pattern surface is crosslinked and cured by the diffused acid. The coated layer is developed to form a hole pattern having crosslinked and cured layer on the resist pattern, of which the hole size is less than a limit resolution of the wavelength of a light-exposure and which have no development defects.

Protected polyvinyl alcohol auxiliary for forming fine pattern and process for producing the same

In a method of effectively miniaturizing a resist pattern, a super fine pattern-forming method of restricting a film thickness of a crosslinked film and also preventing developing defects is provided using a super fine pattern-forming material which contains a solvent composed of a water-soluble resin, a water-soluble crosslinking agent, and water or a mixing solution of water and a water-soluble organic solvent, and an amine compound-containing developing solution. The amine compound-containing developing solution is preferably a primary amine compound such as polyallylamine, monomethanolamine, and monoethanolamine, a secondary amine compound such as dimethylamine, diethylamine, dimethanolamine, and diethanolamine, a tertiary amine compound such as trimethylamine, triethylamine, trimethanolamine, and triethanolamine, or a quartenary amine compound such as hydrated tetramethylamine.

Method for fine pattern formation

In the method wherein a resist pattern is miniaturized effectively by applying a fine pattern forming material, the fine pattern forming material used for providing with a cured coated layer pattern, wherein development defects are reduced by water development is offered, wherein the fine pattern forming material comprises a water-soluble resin, a water-soluble crosslinking agent and water or a mixed solution consisting of water and a water-soluble organic solvent, and further comprises an amine compound.

Growing community of inventors

Kakegawa, Japan

Kiyohisa Takahashi