Jsr Corporation

Kimiyasu Sano

Hozumi Sato

Toshiyuki Ota

Masaru Ohta

Katsutoshi Igarashi

Hideki Chiba

Hideaki Tashiro

Yoshiyuki Michino

A negative photoresist stripping liquid composition is provided which comprises from 30 to 75% by weight of dimethyl sulfoxide, from 20 to 65% by weight of 1,3-dimethyl-2-imidazolidinone, from 0.1 to 5% by weight of a tetraalkylammonium hydroxide and from 0.5 to 15% by weight of water. The composition has a superior stripping performance especially against photoresists that are alkali-developable and can form films of at least 20 .mu.m in thickness, and has no problem of freezing even when stored outdoors in the winter. The composition is useful for the stripping of negative photoresists for bump formation and for fabricating circuit substrates.

Negative photoresist stripping liquid composition

A radiation sensitive resin composition comprising:

Radiation sensitive resin composition and material for forming bumps

A positive photoresist composition including (A) 100 parts by weight of an alkali-soluble novolak resin, and based thereon; (B) 5 to 50 parts by weight of an alkali-soluble acrylic resin containing, as s, 10 to 80% by weight of a unit of a radical-polymerizable compound having an alcoholic hydroxyl group and 3 to 50% by weight of at least one of a unit of a radical-polymerizable compound having a carboxyl group and a unit of a radical-polymerizable compound having a phenolic hydroxyl group; (C) 5 to 100 parts by weight of a quinonediazide group-containing compound; and (D) a solvent, is provided. This composition has a good adhesion to substrates at the time of development and a good plating solution resistance and moreover can be well wetted with plating solutions, can be well developed with alkali developing solutions and can be well stripped from substrates at the resist unexposed areas, and is suited for the formation of thick films suitable as bump forming materials.

Positive photoresist composition

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Tsukuba, Japan

Kimiyasu Sano