Canon Anelva Corporation

Kimiko Mashimo

Nobuo Yamaguchi

Shinya Nagasawa

Takuya Seino

Manabu Ikemoto

It was found out that when radicals generated by plasma are fed to a treatment chamber via a plurality of holes () formed on a partition plate which separates a plasma-forming chamber () from the treatment chamber, and the radicals are mixed with a treatment gas which is separately fed to the treatment chamber, the excitation energy of the radicals is suppressed and thereby the substrate surface treatment at high Si-selectivity becomes possible, which makes it possible to conduct the surface treatment of removing native oxide film and organic matter without deteriorating the flatness of the substrate surface. The radicals in the plasma are fed to the treatment chamber via radical-passing holes () of a plasma-confinement electrode plate () for plasma separation, the treatment gas is fed to the treatment chamber () to be mixed with the radicals in the treatment chamber, and then the substrate surface is cleaned by the mixed atmosphere of the radicals and the treatment gas.

Substrate cleaning method for removing oxide film

A deposition apparatus includes a shutter storage unit which is connected to a processing chamber via an opening and stores a shutter in the retracted state into an exhaust chamber, and a shield member which is formed around the opening of the shutter storage unit and covers the exhaust port of the exhaust chamber. The shield member has, at a position of a predetermined height between the opening of the shutter storage unit and a deposition unit, the first exhaust path which communicates with the exhaust port of the exhaust chamber.

Deposition apparatus and electronic device manufacturing method

It is an object of this invention to prevent a deposited film from adhering to an exhaust chamber so as to suppress the generation of particles. A sputtering apparatus () includes a shutter accommodation unit () which is detachably placed in an exhaust chamber () and accommodates a shutter () in a retracted state, and shield members () which at least partially cover the exhaust port of the exhaust chamber (), and are at least partially formed around an opening portion of the shutter accommodation unit ().

Growing community of inventors

Hachioji, Japan

Kimiko Mashimo