Tokyo Electron Limited

Other

Japan Science and Technology Corporation

Tokyo Electron Yamanashi Limited

Kimihiro Higuchi

Takehiro Ueda

Kaoru Oohashi

Akihiro Kikuchi

Yuichiro Sakamoto

Tadashi Gondai

Satoshi Kayamori

Shinya Shima

Munehiro Shibuya

Chishio Koshimizu

Shin Okamoto

Toshihiko Shindo

Koji Maruyama

Hiroyuki Ishihara

Eiichi Nishimura

Nobuo Ishii

Tatsuo Matsudo

Teruo Iwata

Kazuki Denpoh

Vaidyanathan Balasubramaniam

Kouichiro Inazawa

Yoshiki Igarashi

Masakazu Higuma

Masaaki Hagihara

Tadashi Aoto

Eiichiro Kikuchi

Tomoaki Ukei

Ralph Kim

Ryoichiro Koshi

Philip Sansone

An etching chamberincorporates a focus ringso as to surround a semiconductor wafer W provided on a lower electrode. The plasma processor is provided with an electric potential control DC power supplyto control the electric potential of this focus ring, and so constituted that the lower electrodeis supplied with a DC voltage of e.g., &#x2212;400 to &#x2212;600 V to control the electric potential of the focus ring. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

Plasma processor and plasma processing method

An etching chamberincorporates a focus ringso as to surround a semiconductor wafer W provided on a lower electrode. The plasma processor is provided with an electric potential control DC power supplyto control the electric potential of this focus ring, and so constituted that the lower electrodeis supplied with a DC voltage of, e.g., &#x2212;400 to &#x2212;600 V to control the electric potential of the focus ring. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

A surface processing method for a mounting stage, which enables a mounting surface conforming to a substrate to be formed while saving time and effort. The substrate is mounted on a mounting surface of the mounting stage disposed in a housing chamber of a substrate processing apparatus that carries out plasma processing on the substrate. The mounted substrate is thermally expanded.

Surface processing method for mounting stage

A plasma processing method for performing a plasma process on a substrate to be processed by making a plasma act thereon includes the following sequential steps of making a plasma weaker than one used in the plasma process act on the substrate, applying a DC voltage to an electrostatic chuck for attracting and holding the substrate while the weak plasma acts on the substrate, extinguishing the weak plasma, and performing the plasma process. Further, a plasma processing apparatus includes a plasma processing mechanism for performing a plasma process on a substrate to be processed, and a controller for controlling the plasma processing mechanism to thereby perform the plasma processing method.

Plasma processing method and plasma processing apparatus

Plasma procesor and plasma processing method

A plasma processing apparatus for converting a processing gas into a plasma by a high frequency power in a processing chamber and performing a plasma processing on a substrate mounted on a mounting table includes a ring portion disposed to surround the substrate on the mounting table, and a temperature control unit for establishing a temperature difference between the ring portion and the substrate, such that the ring portion is at least 50&#xb0; C. higher than the substrate. Further, the processing gas generates chlorine radicals, and the temperature control unit is at least one of a heating unit for heating the ring portion and a cooling unit for cooling the mounting table.

Plasma processing method

A method for etching an organic anti-reflective coating (ARC) layer on a substrate in a plasma processing system comprising: introducing a process gas comprising nitrogen (N), hydrogen (H), and oxygen (O); forming a plasma from the process gas; and exposing the substrate to the plasma. The process gas can, for example, constitute an NH/O, N/H/O, N/H/CO, NH/CO, or NH/CO/Obased chemistry. Additionally, the process chemistry can further comprise the addition of helium. The present invention further presents a method for forming a bilayer mask for etching a thin film on a substrate, wherein the method comprises: forming the thin film on the substrate; forming an ARC layer on the thin film; forming a photoresist pattern on the ARC layer; and transferring the photoresist pattern to the ARC layer with an etch process using a process gas comprising nitrogen (N), hydrogen (H), and oxygen (O).

Method and apparatus for bilayer photoresist dry development

An electrostatic chuckis provided on a lower electrodeprovided inside a processing chamberof an etching apparatusand a conductive inner ring bodyand an insulating outer ring bodyare encompassing the outer edges of a wafer W mounted on the chuck surface. The temperatures of the wafer W and the inner and outer ring bodiesandare detected by first&#x2dc;third temperature sensorsandA controllercontrols the pressure levels of He supplied to the space between the center of the wafer W and the electrostatic chuckvia first gas outlet ductsand to the space between the outer edges of the wafer W and the electrostatic chuckvia second gas outlet ductsand the quantity of heat generated by a heaterinside the outer ring bodybased upon the information on the temperatures thus detected so that the temperatures of the wafer W and the inner ring bodyare set roughly equal to each other.

Plasma processing apparatus and plasma processing method

An electrostatic chuck is provided on a lower electrode provided inside a processing chamber of an etching apparatus , and a conductive inner ring body and an insulating outer ring body are encompassing the outer edges of a wafer W mounted on the chuck surface. The temperatures of the wafer W and the inner and outer ring bodies and are detected by first&tilde;third temperature sensors and . A controller controls the pressure levels of He supplied to the space between the center of the wafer W and the electrostatic chuck via first gas outlet ducts and to the space between the outer edges of the wafer W and the electrostatic chuck via second gas outlet ducts and the quantity of heat generated by a heater inside the outer ring body based upon the information on the temperatures thus detected so that the temperatures of the wafer W and the inner ring body are set roughly equal to each other.

Method and apparatus for plasma processing

Disclosed herein is a method of detecting an end point of plasma process performed on an object, and a plasma process apparatus. The method includes the steps of detecting an emission spectrum over a wavelength region specific to C.sub.2 in the plasma, by optical detecting means, and determining the end point of the plasma process from the emission intensity of the emission spectrum detected by the optical detector. The apparatus has a process chamber, a pair of electrodes, a light-collecting device, an optical detector, and a determining device. The chamber has a monitor window. The electrodes are located in the process chamber. The first electrode is used to support the object. A high-frequency power is supplied between the electrodes to change a process gas into plasma. The light-collecting device collects the light from the plasma through the monitor window. The optical detector detects an emission spectrum from the light collected. The determining device determines the end point of the plasma process from the emission intensity of the emission spectrum detected. The monitor window is secured to the distal end of a cylindrical member protruding from the chamber. The member has a narrow gas passage for trapping a gas generated by the plasma process.

Method and devices for detecting the end point of plasma process

A plasma processing method of performing plasma processing such as plasma film formation processing on a target object arranged in a processing vessel is disclosed. This method includes the first step of introducing an inert gas into the processing vessel, the second step of generating a plasma of the inert gas in the processing vessel, the third step of introducing a processing gas for processing the target object into the processing vessel, and the fourth step of generating a plasma of the processing gas in the processing vessel to process the target object.

Plasma processing method, plasma processing apparatus, and plasma

Growing community of inventors

Nirasaki, Japan

Kimihiro Higuchi